辐照混合像素探测器偏置结构的测试束分析
Testbeam analysis of biasing structures for irradiated hybrid pixel detectors
AI总结：
本文通过测试束实验研究辐照后基于RD53A芯片的混合像素探测器，发现穿通偏置结构会导致局部效率降低，但所有器件在400 V偏压下仍满足97%效率要求。
摘要：
在长停机（LS3）期间进行第二阶段升级后，大型强子对撞机（LHC）的目标是达到 $7.5\times 10^{34}$cm$^{-2}$s$^{-1}$ 的峰值瞬时亮度，这对应于每次束流交叉（每 25 ns）平均约 200 次非弹性质子-质子碰撞。为应对这些条件，ATLAS 内部探测器将被一套全新的全硅系统——内部径迹探测器（ITk）所取代。ITk 将运行超过十年，在此期间 ATLAS 预计记录约 4000 fb$^{-1}$ 的数据。ITk 的像素子系统基于混合像素模块，采用新型硅传感器和读出芯片。这些研究聚焦于测试束实验，旨在研究基于首个大型结构原型前端读出芯片——RD53A——并使用平面硅传感器的混合像素探测器模块的空间分辨率和效率。这些器件已经过辐照，以复现 ATLAS 探测器运行期间所处的高辐射环境的影响。本文总结了使用具有不同穿通偏置结构的传感器以及使用不同读出芯片的器件的测试结果。研究发现，与不含穿通偏置结构的传感器相比，采用穿通偏置结构的传感器系统地表现出较低的效率，这是由于穿通点周围存在局部相对低效区域所致。尽管如此，所有被测器件在辐照至寿命末期注量后，均满足在 $V_\mathrm{bias}=400$ V 时达到 97% 效率的要求。
英文摘要：
Following the Phase-II upgrade during Long Shutdown (LS3), the LHC aims to reach a peak instantaneous luminosity of $7.5\times 10^{34}$cm$^{-2}$s$^{-1}$, which corresponds to an average of around 200 inelastic proton-proton collisions per beam-crossing (every 25 ns). To cope with these conditions, the ATLAS Inner Detector will be replaced by a new all-silicon system -- the Inner Tracker (ITk). The ITk will be operational for more than ten years, during which time ATLAS is expected to record approximately 4000 fb$^{-1}$ of data. The ITk's pixel sub-system is based on hybrid pixel modules with new silicon sensors and readout chips. These studies focus on testbeam campaigns undertaken to study the spatial resolution and efficiencies of hybrid pixel detector modules based on the first large-structure prototype front-end readout chip -- the RD53A -- using planar silicon sensors. These devices have been irradiated to replicate the effect of the high radiation environment present during operation in the ATLAS detector. Results for devices using sensors with different punch-through bias structures and using different readout chips are summarised. Those with sensors incorporating a punch-through bias structure are found to exhibit systematically lower efficiency than those without, as a result of local areas of relative inefficiency around the punch-through dots. Despite this, all devices measured are found to satisfy the requirement of 97% efficiency at $V_\mathrm{bias}=400$ V after being irradiated to end-of-life fluence.
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