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arXiv 2012.05868physics.ins-det
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MuPix10: First Results from the Final Design

Heiko Augustin, Niklaus Berger, Sebastian Dittmeier, David Maximilian Immig, Dohun Kim, Lukas Mandok, Annie Meneses Gonzalez, Marius Menzel, Lars Olivier Sebast… 展开作者

Heiko Augustin, Niklaus Berger, Sebastian Dittmeier, David Maximilian Immig, Dohun Kim, Lukas Mandok, Annie Meneses Gonzalez, Marius Menzel, Lars Olivier Sebastian Noehte, Ivan Perić, Alexander Schmidt, André Schöning, Luigi Vigani, Alena Weber, Benjamin Weinläder

英文摘要:

Many years of research and development of High Voltage Monolithic Active Pixel Sensors (HVMAPS) have culminated in the final design for the Mu3e pixel sensor. MuPix10 is a fully monolithic sensor with an active pixel matrix size of $20\times20\,\mathrm{mm}^2$ produced in the $180\,\mathrm{nm}$ HV-CMOS process at TSI Semiconductors. The pixel size is $80\times80\,\mathrm{μm}^2$. Hits are read out using a column-drain architecture and sent over up to four serial links with up to $1.6\,\left.\mathrm{Gbit}\middle/\mathrm{s}\right.$ each. By means of DC/DC converters and exclusive usage of on-chip biasing, MuPix10 is fully operable with a minimal set of electrical connections. This is an integral requirement by the Mu3e experiment since it enables the construction of ultra-thin pixel modules with $0.1\,$% of a radiation length per layer. First results from lab characterisation and testbeam campaigns are presented.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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