Simulated Charge Stability in a MOSFET Linear Quantum Dot Array
Zach D. Merino, Bohdan Khromets, Jonathan Baugh
备注：
10 pages, 4 figures. Submitted in proceedings of the VI Applied Mathematics, Modeling, and Computer Simulation (AMMCS) International Conference, Waterloo, Ontario, Canada
In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a realistic double QD device geometry. These methods generaize to linear QD arrays, and are based on determining the effective parameters of a Hubbard model Hamiltonian that is then diagonalized to find the many-electron ground state energy. These calculations enable the identification of gate voltage ranges that maintain desired charge states during qubit manipulation, and also account for electrical cross-talk between QDs. As a result, the methods presented here promise to be a valuable tool for developing scalable spin qubit quantum processors.
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University of California, Los Angeles（加州大学洛杉矶分校）；National Institute of Standards and Technology（美国国家标准与技术研究院）；Joint Quantum Institute, University of Maryland（马里兰大学联合量子研究所）
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Tuning arrays with rays: Physics-informed tuning of quantum dot charge states
National Institute of Standards and Technology（美国国家标准与技术研究院）；Intel Corporation（英特尔公司）；Joint Center for Quantum Information and Computer Science（量子信息与计算机科学联合中心）；University of Maryland（马里兰大学）
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