arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 1002.0037cond-mat.mes-hallcond-mat.quant-gascond-mat.stat-mech
收藏

用单电子统计方法测量介观量子电子系统的温度

Measuring the Temperature of a Mesoscopic Quantum Electron System by means of Single Electron Statistics

Enrico Prati, Matteo Belli, Marco Fanciulli, Giorgio Ferrari

摘要:

利用金属-氧化物-半导体场效应晶体管(MOSFET)量子点中$Si/SiO_2$界面处的点缺陷对电子的俘获和发射,测量了介观系统的温度.与以前的报道不同,我们发现Si n-MOSFET中点缺陷的捕获和发射可以与温度相关,最低可达800 mK。在有限量子巨正则系综模型下,利用缺陷中的时域电荷涨落来确定沟道中少量电子气的温度。

英文摘要:

We measure the temperature of a mesoscopic system consisting of an ultra-dilute two dimensional electron gas at the $Si/SiO_2$ interface in a metal-oxide-semiconductor field effect transistor (MOSFET) quantum dot by means of the capture and emission of an electron in a point defect close to the interface. Contrarily to previous reports, we show that the capture and emission by point defects in Si n-MOSFETs can be temperature dependent down to 800 mK. As the finite quantum grand canonical ensemble model applies, the time domain charge fluctuation in the defect is used to determine the temperature of the few electron gas in the channel.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑