arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2402.11047cs.ARcs.ETcs.PFphysics.optics
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一种基于氮化硅光子学的低耗散且可扩展的GEMM加速器

A Low-Dissipation and Scalable GEMM Accelerator with Silicon Nitride Photonics

Venkata Sai Praneeth Karempudi, Sairam Sri Vatsavai, Ishan Thakkar, Oluwaseun Adewunmi Alo, Jeffrey Todd Hastings, Justin Scott Woods

AI总结:

针对基于SOI的MRR光子GEMM加速器散射损耗高和双光子吸收导致性能受限的问题,提出基于氮化硅的SiNPhAR架构,显著提升了并行度、吞吐量和能效。

摘要:

在过去的几年中,人们提出了几种基于微环谐振器(MRR)的模拟光子架构来加速在深度学习工作负载中大量存在的通用矩阵乘法(GEMM)。这些架构因其与电子对应物相比提供了卓越的吞吐量和能效而大受欢迎。然而,由于这些架构传统上基于绝缘体上硅(SOI)材料平台实现,它们面临两个缺点。首先,SOI平台的高折射率对比会引起高散射损耗,这要求提供高光输入功率。其次,SOI波导易受双光子吸收影响,在中到高信号扇入时会导致大量光信号损耗。这些缺点对基于SOI MRR的GEMM加速器的可实现并行度、吞吐量和能效产生了严重的不利影响。为了解决这些缺点,我们提出了一种名为SiNPhAR的新型氮化硅(SiN)基光子GEMM加速器。SiNPhAR架构采用基于SiN的有源和无源器件来实现模拟GEMM功能。由于SiN材料表现出较低的折射率对比且没有TPA,我们的SiNPhAR架构中的光信号损耗非常低。与先前工作中基于SOI的光子GEMM加速器相比,这一优势显著提高了SiNPhAR架构的可实现处理并行度、吞吐量和能效。我们通过针对包含四个现代深度神经网络模型的基准工作负载的跨层评估,量化并比较了SiNPhAR架构的这些优势。从系统级性能分析来看,SiNPhAR展现出至少1.7倍更好的吞吐量FPS,同时消耗的能效(FPS/W)比先前基于SOI的GEMM加速器至少好2.8倍。

英文摘要:

Over the past few years, several microring resonator (MRR)-based analog photonic architectures have been proposed to accelerate general matrix-matrix multiplications (GEMMs), which are found in abundance in deep learning workloads.These architectures have dramatically grown in popularity because they offer exceptional throughput and energy efficiency compared to their electronic counterparts. However, such architectures, due to their traditional realization based on the silicon-on-insulator (SOI) material platform, face two shortcomings. First, the high-index contrast of the SOI platform incurs high scattering losses, which mandates the provisioning of high optical input power.Second, SOI waveguides are susceptible to two-photon absorption, which can incur substantial optical signal losses at moderate-to-high signal fan-in. These shortcomings have severely detrimental effects on the achievable parallelism, throughput, and energy efficiency of SOI MRR-based GEMM accelerators. To address these shortcomings, we present a novel Silicon Nitride (SiN)-Based Photonic GEMM Accelerator called SiNPhAR. SiNPhAR architecture employs SiN-based active and passive devices to implement analog GEMM functions. Since the SiN material exhibits lower index contrast and no TPA, the optical signal losses in our SiNPhAR architecture are very low. This advantage significantly enhances the achievable processing parallelism, throughput, and energy efficiency of SiNPhAR architecture, compared to SOI-based photonic GEMM accelerators from prior work. We quantify and compare these benefits of SiNPhAR architecture via our cross-layer evaluation for a benchmark workload comprising four modern deep neural network models. From the system-level performance analysis, SiNPhAR demonstrates at least 1.7x better throughput FPS while consuming at least 2.8x better energy efficiency (FPS/W) than prior SOI-based GEMM accelerators.

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