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arXiv 2401.04321cond-mat.mes-hall
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超晶格调制双层石墨烯中的栅极可调拓扑相

Gate-tunable topological phases in superlattice modulated bilayer graphene

Yongxin Zeng, Tobias M. R. Wolf, Chunli Huang, Nemin Wei, Sayed Ali Akbar Ghorashi, Allan H. MacDonald, Jennifer Cano

AI总结:

本文研究超晶格调制双层石墨烯,通过解析与数值方法揭示位移场及超晶格势形状、强度对拓扑平坦带和对称破缺相的调控,并给出 ν=1 的平均场相图。

摘要:

超晶格势调制可在 Bernal 堆叠双层石墨烯中产生平坦微带。在本工作中,我们研究如何通过调控位移场以及超晶格势的形状和强度,来控制该体系中的能带拓扑和相互作用诱导的对称破缺相。我们采用解析微扰分析证明,蜂窝晶格形状的势有利于拓扑平坦带;并通过数值计算表明,拓扑带的稳健性同时取决于位移场强度和超晶格势的周期性。在拓扑平坦带的整数填充处,位移场和超晶格势的强度可调控量子反常霍尔绝缘体、平庸绝缘体和金属态之间的相变。我们给出了填充因子 ν=1 时栅极电压参数空间中的平均场相图,并讨论了当超晶格势调制由介电图案化或邻近莫尔材料产生时,实现量子反常霍尔绝缘体和分数 Chern 绝缘体的前景。

英文摘要:

Superlattice potential modulation can produce flat minibands in Bernal-stacked bilayer graphene. In this work we study how band topology and interaction-induced symmetry-broken phases in this system are controlled by tuning the displacement field and the shape and strength of the superlattice potential. We use an analytic perturbative analysis to demonstrate that topological flat bands are favored by a honeycomb-lattice-shaped potential, and numerics to show that the robustness of topological bands depends on both the displacement field strength and the periodicity of the superlattice potential. At integer fillings of the topological flat bands, the strength of the displacement field and the superlattice potential tune phase transitions between quantum anomalous Hall insulator, trivial insulator, and metallic states. We present mean-field phase diagrams in a gate voltage parameter space at filling factor $ν=1$, and discuss the prospects of realizing quantum anomalous Hall insulators and fractional Chern insulators when the superlattice potential modulation is produced by dielectric patterning or adjacent moiré materials.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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