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arXiv 2310.15331cond-mat.str-elcond-mat.mtrl-scicond-mat.supr-con
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二维高阶范霍夫奇点的工程化研究

On the engineering of higher-order Van Hove singularities in two dimensions

Anirudh Chandrasekaran, Luke C. Rhodes, Edgar Abarca Morales, Carolina A. Marques, Phil D. C. King, Peter Wahl, Joseph J. Betouras

AI总结:

本研究提出一种检测分析二维材料高阶范霍夫奇点的新理论方法,应用于Sr₂RuO₄表层电子结构,结合实验数据约束低能模型并分析费米能级附近奇点,展示了将普通范霍夫奇点工程化为高阶奇点的方法。

摘要:

关联电子材料的性质往往与费米能附近的范霍夫奇点(Van Hove singularities,VHS)密切相关。这类VHS的类别极为重要,其中态密度呈幂律发散的高阶VHS,通常会在物理性质中留下独特的特征。我们采用一种新的理论方法来检测和分析二维材料中的高阶VHS(higher-order VHS,HOVHS),并将其应用于Sr₂RuO₄表层的电子结构研究。随后,我们结合角分辨光电子能谱和准粒子干涉数据,约束了Sr₂RuO₄表层VHS的低能模型,以分析费米能级附近的VHS。我们还展示了如何将这些VHS工程化为HOVHS。

英文摘要:

The properties of correlated electron materials are often intricately linked to Van Hove singularities (VHS) in the vicinity of the Fermi energy. The class of these VHS is of great importance, with higher-order ones -- with power-law divergence in the density of states -- leaving frequently distinct signatures in physical properties. We use a new theoretical method to detect and analyse higher-order VHS (HOVHS) in two-dimensional materials and apply it to the electronic structure of the surface layer of Sr$_2$RuO$_4$. We then constrain a low energy model of the VHS of the surface layer of Sr$_2$RuO$_4$ against angle-resolved photoemission spectroscopy and quasiparticle interference data to analyse the VHS near the Fermi level. We show how these VHS can be engineered into HOVHS.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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