We investigate the electronic structure of the new family of kagome metals AV$_{3}$Sb$_{5}$ (A = K, Rb, Cs) using first-principles calculations. We analyze systematically the evolution of the van Hove singularities (vHss) across the entire family upon applied pressure and hole doping, specifically focusing on the two vHss closer to the Fermi energy. With pressure, these two saddle points shift away from the Fermi level. At the same time, the Fermi surface undergoes a large reconstruction with respect to the Sb bands while the V bands remain largely unchanged, pointing to the relevant role of the Sb atoms in the electronic structure of these materials. Upon hole doping, we find the opposite trend, where the saddle points move closer to the Fermi level for increasing dopings. All in all, we show how pressure and doping are indeed two mechanisms that can be used to tune the location of the two vHss closer to the Fermi level and can be exploited to tune different Fermi surface instabilities and associated orders.
Densities of states for simple (sc) and base-centered (bcc) cubic lattices with account of nearest and next-nearest neighbour hopping integrals $t$ and $t'$ are investigated in detail. It is shown that at values of $τ\equiv t'/t = τ_\ast$, corresponding to the change of isoenergetic surface topology, the formation of van Hove $\bf k$ lines takes place. At small deviation from these special values, the weakly dispersive spectrum in the vicinity of van Hove lines is replaced by a weak $\bf k$-dependence in the vicinity of few van Hove points which possess huge masses proportional to $|τ- τ_\ast|…
The electronic band structure of twisted bilayer graphene develops van Hove singularities whose energy depends on the twist angle between the two layers. Using Raman spectroscopy, we monitor the evolution of the electronic band structure upon doping using the G peak area which is enhanced when the laser photon energy is resonant with the energy separation of the van Hove singularities. Upon charge doping, the Raman G peak area initially increases for twist angles larger than a critical angle and decreases for smaller angles. To explain this behavior with twist angle, the energy of separation o…
The unconventional temperature variation of the Knight shift (static spin susceptibility) that has been observed in Fe-based superconductors AFe$_2$As$_2$ (A = K, Rb, Cs) is explained in terms of proximity to a van Hove singularity. Using the Hubbard model we show that when the Fermi energy is in the vicinity of a van Hove singularity, a downturn in spin susceptibility occurs as the temperature is lowered. This behavior is characterized by a temperature, $T^*$, which is determined by the difference in energy between the Fermi level and the van Hove singularity. When vertex corrections are take…
A van der Waals coupled Weyl semimetal material NbIrTe4 is investigated by combining scanning tunneling microscopy/spectroscopy and first principles calculations. We observe a sharp peak in the tunneling conductance near the zero bias energy, and its origin is ascribed to a van Hove singularity associated with a Lifshitz transition of the topologically none trivial Fermi arc states. Furthermore, tunneling spectroscopy measurements show a surprisingly large signature of electron boson coupling, which presumably represents anomalously enhanced electron phonon coupling through the enhanced charge…
Transition-metal-based kagome materials at van Hove filling are a rich frontier for the investigation of novel topological electronic states and correlated phenomena. To date, in the idealized two-dimensional kagome lattice, topologically nontrivial Dirac surface states (TDSSs) have not been unambiguously observed, and the manipulation of TDSSs and van Hove singularities (VHSs) remains largely unexplored. Here, we reveal TDSSs originating from a Z${_2}$ bulk topology and identify multiple VHSs near the Fermi level ($\textit{E}$${_F}$) in magnetic kagome material GdV${_6}$Sn${_6}$. Using in-sit…
Van Hove singularity are electronic instabilities that lead to many fascinating interactions, such as superconductivity and charge-density waves. And despite much interest, the nexus of emergent correlation effects from van Hove singularities and topological states of matter remains little explored in experiments. By utilizing synchrotron-based angle-resolved photoemission spectroscopy and Density Functional Theory, here we provide the first discovery of the helicoid quantum nature of topological Fermi arcs inducing van Hove singularities. In particular, in topological chiral conductors RhSi a…
We propose an experimental method to examine the in-plane anisotropy of electronic structure in layered conductors. In the method, we measure the interlayer magnetoresistance as a function of in-plane magnetic field orientation. We applied it to an organic Dirac fermion system a-(BEDT-TTF)2I3 to experimentally determine the orientation of the anisotropic Dirac cones. It is concluded that the long axis of the elliptic constant-energy contours of the Dirac cone is tilted by approximately -30 deg from the crystalline a-axis to b-axis under hydrostatic pressures. Additionally, we observed a signat…
We present a practical method to detect, diagnose and engineer higher order Van Hove singularities in multiband systems, with no restrictions on the number of bands and hopping terms. The method allows us to directly compute the Taylor expansion of the dispersion of any band at arbitrary points in momentum space, using a generalised extension of the Feynman Hellmann theorem, which we state and prove. Being fairly general in scope, it also allows us to incorporate and analyse the effect of tuning parameters on the low energy dispersions, which can greatly aid the engineering of higher order Van…
The electronic states of capped semi-infinite nanotubes are studied within the phenomenological gauge field-theory model. A single manifold for the description of both the nanotube and the cap region (considered as nearly a half of either Ih or I fullerene) is suggested. The wavefunctions and the density of states (DoS) are numerically calculated for both metallic and semiconducting nanotubes. The smoothing of van Hove singularities is found and proven analytically. The comparison with the experimental observations is discussed.
Even though the viscosity is one of the most fundamental properties of liquids, the connection with the atomic structure of the liquid has proven elusive. By combining inelastic neutron scattering with the electrostatic levitation technique the time-dependent pair-distribution function (i.e. the Van Hove function) has been determined for liquid Zr80Pt20. We show that the decay-time of the first peak of the Van Hove function is directly related to the Maxwell relaxation time of the liquid, which is proportional to the shear viscosity. This result demonstrates that the local dynamics for increas…
Tantalum diselenide (TaSe2) is an exciting material that hosts charge density wave order (CDW) and superconductivity. Thus, providing a playing field for examining the interactions of fundamental electronic quantum states in materials. Recent research has proposed that the intrinsic quantum electronic state in the TaSe2 lattice could be improved by aligning the Van Hove singularity (VHs) with the Fermi level. In this study, we attempt to tune the VHs in TaSe2 to align them within the vicinity of the Fermi level via electron doping by chemically substituting Pt for Ta atoms. On investigating th…
We discuss the evolution of high-order Van Hove singularities (hoVHSs) that carry faster-than logarithmic divergences over a wide range of parameters in cuprate-like electronic band dispersions. Numerical analysis gives insight into the quantization of the VHS power-law-exponent pV and into transitions between hoVHSs with different values of pV. The cuprates are found to lie in the parameter regime where the amplitude of the hoVHS is not too large. Our study indicates that the occurrence of high-temperature superconductivity requires simultaneous tuning of two different competing orders (antif…
Layered electrides, as typified by Ca$_2$N, are a new class of quasi-two-dimensional materials with low work functions. Using first-principles calculations, we have shown that a graphene layer deposited on Ca$_2$N is doped to $n=5\times 10^{14}$ cm$^{-2}$ with its Fermi level aligned with the logarithmically divergent van Hove singularity in the graphene $π^*$ band. For bilayer graphene on Ca$_2$N, the inner graphene layer is doped to the same level, while the doping of the outer graphene layer is much more modest. This finding opens an interesting possibility of using layered electrides for t…
Possible high thermoelectric power factor in alkali-metal-intercalated BC$_3$: anisotropic multiple valleys originating from the van Hove singularity of graphene
At very high doping levels the van Hove singularity in the $π^*$ band of graphene becomes occupied and exotic ground states possibly emerge, driven by many-body interactions. Employing a combination of ytterbium intercalation and potassium adsorption, we $n$ dope epitaxial graphene on silicon carbide past the $π^*$ van Hove singularity, up to a charge carrier density of 5.5$\times$10$^{14}$ cm$^{-2}$. This regime marks the unambiguous completion of a Lifshitz transition in which the Fermi surface topology has evolved from two electron pockets into a giant hole pocket. Angle-resolved photoelect…
Van Hove singularities (VHS's) in the density of states play an outstanding and diverse role for the electronic and thermodynamic properties of crystalline solids. At the critical point the Fermi surface connectivity changes and topological properties undergo a transition. Opportunities to systematically pass a VHS at the turn of a voltage knob and study its diverse impact are however rare. With the advent of van der Waals heterostructures, control over the atomic registry of neigbouring graphene layers offers an unprecedented tool to generate a low energy VHS easily accessible with convention…
We show that the electron-phonon coupling strength obtained from the slopes of the electronic energy vs. wavevector dispersion relations, as often done in analyzing angle-resolved photoemission data, can differ substantially from the actual electron-phonon coupling strength due to the curvature of the bare electronic bands. This effect becomes particularly important when the Fermi level is close to a van Hove singularity. By performing {\it ab initio} calculations on doped graphene we demonstrate that, while the apparent strength obtained from the slopes of experimental photoemission data is h…
We point out that in the deep band-inverted state, topological insulators are generically vulnerable against symmetry breaking instability, due to a divergently large density of states of 1D-like exponent near the chemical potential. This feature at the band edge is associated with a novel van Hove singularity resulting from the development of a Mexican-hat band dispersion. We demonstrate this generic behavior via prototypical 2D and 3D models. This realization not only explains the existing experimental observations of additional phases, but also suggests a route to activate additional functi…
Interlayer interactions perturb the electronic structure of two-dimensional materials and lead to new physical phenomena, such as van Hove singularities and Hofstadter's butterfly pattern. Silicene, the recently discovered two-dimensional form of silicon, is quite unique, in that silicon atoms adopt competing <i>sp</i><sup>2</sup> and <i>sp</i><sup>3</sup> hybridization states leading to a low-buckled structure promising relatively strong interlayer interaction. In multilayer silicene, the stacking order provides an important yet rarely explored degree of freedom for tuning its electronic stru…
It is suggested that the appearance of Jordan blocks in the normal form of the recursion (transfer) matrix is responsible for high temperature superconductivity and related phenomena. Several published observations are discussed to support this idea. The draft of a quantum chemical theory is given for a more complete verification. Keywords: Jordan scenario, Van Hove scenario, high temperature superconductivity. Short title: Jordan scenario of high temperature superconductivity.
We present a temperature-dependent infrared spectroscopy study on the layered topological semimetal Nb$_3$SiTe$_6$ combined with density-functional theory (DFT) calculations of the electronic band structure and optical conductivity. Our results reveal an anisotropic behavior of the in-plane ($ac$-plane) optical conductivity, with three pronounced excitations located at around 0.15, 0.28, and 0.41~eV for the polarization of the incident radiation along the $c$ axis. These excitations are well reproduced in the theoretical spectra. Based on the \textit{ab initio} results, the excitations around …
Gold intercalation between the buffer layer and a graphene monolayer of epitaxial graphene on SiC(0001) leads to the formation of quasi free standing small aggregates of clusters. Angle Resolved Photoemission Spectroscopy measurements reveal that these clusters preserve the linear dispersion of the graphene quasiparticles and surprisingly increase their Fermi velocity. They also strongly modify the band structure of graphene around the Van Hove singularities (VHs) by a strong extension without charge transfer. This result gives a new insight on the role of the intercalant in the renormalizatio…
We report a systematic study of the optical conductivity of twisted bilayer graphene (tBLG) across a large energy range (1.2 eV to 5.6 eV) for various twist angles, combined with first-principles calculations. At previously unexplored high energies, our data show signatures of multiple van Hove singularities (vHSs) in the tBLG bands, as well as the nonlinearity of the single layer graphene bands and their electron-hole asymmetry. Our data also suggest that excitonic effects play a vital role in the optical spectra of tBLG. Including electron-hole interactions in first-principles calculations i…
We consider the electronic structure of a slightly twisted graphene bilayer and show the coexistence of van Hove singularities (VHSs) and superlattice Dirac points in a continuum approximation. The graphene-on-graphene moiré pattern gives rise to a periodic electronic potential, which leads to the emergence of the superlattice Dirac points due to the chiral nature of the charge carriers. Owning to the distinguishing real and reciprocal structures, the sublattice exchange even and odd structures of the twisted graphene bilayer (the two types of commensurate structures) result in two different s…
Physical properties of two-dimensional van der Waals (vdWs) structures depend sensitively on both stacking orders and interlayer interactions. Yet, in most cases studied to date, the interlayer interaction is considered to be a static property of the vdWs structures. Here we demonstrate that applying a scanning tunneling microscopy (STM) tip pulse on twisted bilayer graphene (TBG) can induce sub-Angstrom fluctuations of the interlayer separation in the TBG, which are equivalent to dynamic vertical external pressure of about 10 GPa on the TBG. The sub-Angstrom fluctuations of the interlayer sep…
The creation of van der Waals heterostructures based on a graphene monolayer and other two-dimensional crystals has attracted great interest because atomic registry of the two-dimensional crystals can modify the electronic spectra and properties of graphene. Twisted graphene bilayer can be viewed as a special van der Waals structure composed of two mutual misoriented graphene layers, where the sublayer graphene not only plays the role of a substrate, but also acts as an equivalent role as the top graphene layer in the structure. Here we report the electronic spectra of slightly twisted graphen…
