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arXiv 2310.04491quant-phcond-mat.dis-nncond-mat.stat-mechcs.ITmath.IT
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两阶段热化的物理理论

A Physical Theory of Two-stage Thermalization

Cheryne Jonay, Tianci Zhou

AI总结:

该研究针对局域量子电路中纯度热化的两阶段指数衰减现象,提出纠缠膜理论解释衰减率的物理起源,并指出畴壁占优时可通过局域关联函数测量纠缠增长。

摘要:

热化时间的一个表征是子系统纠缠达到热平衡值。近期对局域量子电路的研究揭示,纯度在热化前后存在两个指数衰减阶段,衰减率分别为$r_1$和$r_2$。我们提出一种纠缠膜理论解释,其中$r_1$对应畴壁自由能。电路几何结构可导致$r_1 < r_2$,产生“幽灵本征值”。畴壁与磁振子的竞争在磁振子占优时会使$r_2 < r_1$。而当畴壁占优时,该机制提供了一种通过局域关联函数测量纠缠增长的实用方法。

英文摘要:

One indication of thermalization time is subsystem entanglement reaching thermal values. Recent studies on local quantum circuits reveal two exponential stages with decay rates $r_1$ and $r_2$ of the purity before and after thermalization. We provide an entanglement membrane theory interpretation, with $r_1$ corresponding to the domain wall free energy. Circuit geometry can lead to $r_1 < r_2$, producing a ``phantom eigenvalue". Competition between the domain wall and magnon leads to $r_2 < r_1$ when the magnon prevails. However, when the domain wall wins, this mechanism provides a practical approach for measuring entanglement growth through local correlation functions.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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