聚焦离子束辐照诱导 Dirac 半金属 α-Sn 向超导体 β-Sn 的同素异形体转变
Allotropic transition of Dirac semimetal α-Sn to superconductor β-Sn induced by irradiation of focused ion beam
AI总结：
研究利用聚焦 Ga 离子束辐照使拓扑 Dirac 半金属 α-Sn 局部转变为超导 β-Sn，并通过 XPS 揭示局部退火与晶体结构是相变关键，为构筑 TDS/超导体面内异质结构提供新方法。
摘要：
金刚石型结构同素异形体 α-Sn 作为拓扑 Dirac 半金属（TDS）正受到广泛关注。在本研究中，我们证明通过聚焦 Ga 离子束（FIB）辐照，α-Sn 会在低温下发生相变，转变为另一种具有超导性的同素异形体 β-Sn。为阐明转变机制，我们对经 FIB 辐照的 α-Sn 薄膜和原生生长的 α-Sn 薄膜进行了 X 射线光电子能谱（XPS）测量。XPS 结果表明，局部退火是 FIB 的副作用之一，正是它导致了 α-Sn 向 β-Sn 的转变。此外，α-Sn 与 β-Sn 之间化学状态的差异可以由晶体结构定量解释，而非反映导电性的金属化程度。这些结果为制备基于 α-Sn 和 β-Sn 的 TDS/超导体面内异质结构提供了一种新途径。
英文摘要：
Diamond-type structure allotrope α-Sn is attracting much attention as a topological Dirac semimetal (TDS). In this study, we demonstrate that α-Sn undergoes a phase transition to another allotrope β-Sn with superconductivity at low temperature by irradiating with a focused Ga ion beam (FIB). To clarify the transition mechanism, we performed X-ray photoemission spectroscopy (XPS) measurements on an α-Sn thin film irradiated with FIB and an as-grown α-Sn thin film. The XPS results suggest that the local annealing, which is one of the side effects of FIB, causes the transformation from α-Sn into β-Sn. Furthermore, the difference in the chemical states between α-Sn and β-Sn can be quantitatively explained by the crystal structures rather than the degree of metallicity reflecting the conductivity. These results propose a new way of fabricating TDS/superconductor in-plane heterostructures based on α-Sn and β-Sn.
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