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arXiv 2308.02485cond-mat.mtrl-scicond-mat.mes-hall
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Si(111)上具有巨 Rashba 劈裂的 Tl-Pb 单层合金表面圆偏振光生电流效应

Surface Circular Photogalvanic Effect in Tl-Pb Monolayer Alloys on Si(111) with Giant Rashba Splitting

Ibuki Taniuchi, Ryota Akiyama, Rei Hobara, Shuji Hasegawa

AI总结:

本文发现 Si(111) 上具有巨 Rashba 效应的 Tl-Pb 单层合金可通过圆偏振光生电流效应产生非互易自旋极化光电流,其强度可与更厚的自旋劈裂薄膜相比,证明单原子层材料也能实现光学自旋操控。

摘要:

我们发现,在 Si(111) 上由 Tl 和 Pb 构成的“单层合金”表面超结构具有巨 Rashba 效应,通过斜入射圆偏振近红外光,可经由圆偏振光生电流效应(CPGE)产生非互易自旋极化光电流。此处的 CPGE 源于向自旋劈裂的表面态能带中注入面内自旋,该现象仅在 Tl-Pb 合金层上观察到,而在单元素 Tl 层或 Pb 层上均未观察到。在 Tl-Pb 单层合金中,尽管其厚度仅为单原子层,CPGE 的强度仍可与许多其他自旋劈裂薄膜材料相当,甚至更大。数据分析表明,该单层合金的相对介电常数 $ε^{\ast}$ 约为 1.0,这是因为该单层存在于真空与衬底之间的过渡区域。本结果开启了即使在单层材料上也能通过光学手段操控电子自旋的可能性。

英文摘要:

We have found that surface superstructures made of "monolayer alloys" of Tl and Pb on Si(111), having giant Rashba effect, produce non-reciprocal spin-polarized photocurrent via circular photogalvanic effect (CPGE) by obliquely shining circularly polarized near-infrared (IR) light. CPGE is here caused by injection of in-plane spin into spin-split surface-state bands, which is observed only on Tl-Pb alloy layers, but not on single-element Tl nor Pb layers. In the Tl-Pb monolayer alloys, despite their monatomic thickness, the magnitude of CPGE is comparable to or even larger than the cases of many other spin-split thin-film materials. The data analysis has provided the relative permittivity $ε^{\ast}$ of the monolayer alloys to be $\sim$ 1.0, which is because the monolayer exists at a transition region between the vacuum and the substrate. The present result opens the possibility that we can optically manipulate spins of electrons even on monolayer materials.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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