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arXiv 2304.09554cond-mat.mtrl-sciphysics.chem-ph
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利用三维纳米尺度应变成像研究卤化物钙钛矿中光致位错迁移

Imaging Light-Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping

Kieran W. P. Orr, Jiecheng Diao, Muhammad Naufal Lintangpradipto, Darren J. Batey, Affan N. Iqbal, Simon Kahmann, Kyle Frohna, Milos Dubajic, Szymon J. Zelewski… 展开作者

Kieran W. P. Orr, Jiecheng Diao, Muhammad Naufal Lintangpradipto, Darren J. Batey, Affan N. Iqbal, Simon Kahmann, Kyle Frohna, Milos Dubajic, Szymon J. Zelewski, Alice E. Dearle, Thomas A. Selby, Peng Li, Tiarnan A. S. Doherty, Stephan Hofmann, Osman M. Bakr, Ian K. Robinson, Samuel D. Stranks

AI总结:

本文利用同步辐射布拉格相干衍射成像对卤化物钙钛矿微晶进行三维纳米尺度应变成像,原位观测到连续光照下位错迁移数百纳米,并将高位错密度和纳米尺度应变与材料退化及光电性能下降相关联,揭示了扩展缺陷和应变对器件性能与稳定性的直接影响。

摘要:

近年来,卤化物钙钛矿材料已被用于制造高性能太阳能电池和发光器件。然而,材料缺陷仍然限制着器件性能和稳定性。在此,我们使用基于同步辐射的布拉格相干衍射成像技术,对卤化物钙钛矿微晶中缺陷附近的纳米尺度应变场进行可视化。我们发现,尽管MAPbBr$_{3}$(MA = CH$_{3}$NH$_{3}^{+}$)晶体具有很高的光电质量,但其内部仍存在显著的应变非均匀性,并通过分析其局部应变场识别出$\langle$100$\rangle$和$\langle$110$\rangle$刃位错。通过在连续光照条件下对这些缺陷和应变场进行原位成像,我们揭示了剧烈的光致位错迁移,迁移距离达数百纳米。此外,通过选择性地研究被X射线束损伤的晶体,我们将高位错密度和增大的纳米尺度应变与材料退化以及通过光致发光显微镜测量评估的光电性能显著改变关联起来。我们的结果证明了卤化物钙钛矿中扩展缺陷和应变的动态特性及其对器件性能和工作稳定性的直接影响。

英文摘要:

In recent years, halide perovskite materials have been used to make high performance solar cell and light-emitting devices. However, material defects still limit device performance and stability. Here, we use synchrotron-based Bragg Coherent Diffraction Imaging to visualise nanoscale strain fields, such as those local to defects, in halide perovskite microcrystals. We find significant strain heterogeneity within MAPbBr$_{3}$ (MA = CH$_{3}$NH$_{3}^{+}$) crystals in spite of their high optoelectronic quality, and identify both $\langle$100$\rangle$ and $\langle$110$\rangle$ edge dislocations through analysis of their local strain fields. By imaging these defects and strain fields in situ under continuous illumination, we uncover dramatic light-induced dislocation migration across hundreds of nanometres. Further, by selectively studying crystals that are damaged by the X-ray beam, we correlate large dislocation densities and increased nanoscale strains with material degradation and substantially altered optoelectronic properties assessed using photoluminescence microscopy measurements. Our results demonstrate the dynamic nature of extended defects and strain in halide perovskites and their direct impact on device performance and operational stability.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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