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arXiv 2304.04563cond-mat.str-el
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具有密度依赖跃迁的离子Hubbard模型的相图

Phase diagram of the ionic Hubbard model with density-dependent hopping

P. Roura Bas, A. A. Aligia

AI总结:

本文获得了包含密度依赖跃迁的离子Hubbard模型量子相图,发现减小特定跃迁项幅度可扩大完全能隙自发二聚化绝缘体相区,该结果与冷原子拓扑电荷泵浦实验相关。

摘要:

我们获得了包含电子-空穴对称的密度依赖跃迁的离子Hubbard模型的量子相图。各相的边界由具有特定离散对称性的激发能级交叉确定,这与具有拓扑意义的电荷和自旋Berry相位的跃变相一致。通过减小不改变总单占据位点数的跃迁项相对于另一跃迁项的幅度,完全能隙自发二聚化绝缘体(分隔能带绝缘相和Mott绝缘相)占据的相图区域被扩大,特别是在交替在位能较小时。该结果可能与包含跃迁交替性的冷原子实验中观察到的拓扑电荷泵浦相关。

英文摘要:

We obtain the quantum phase diagram of the ionic Hubbard model including electron-hole symmetric density-dependent hopping. The boundaries of the phases are determined by crossing of excited levels with particular discrete symmetries, which coincide with jumps of charge and spin Berry phases with a topological meaning. Reducing the magnitude of the hopping terms that do not change the total number of singly occupied sites with respect to the other one, the region of the phase diagram occupied by the fully gapped spontaneously dimerized insulator (which separates the band insulating and Mott insulating phases) is enlarged, particularly for small values of the alternating on-site energy. This result might be relevant for experiments in cold atoms in which topological charge pumping is observed when alternation in the hopping is included.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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