arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 2304.03027cond-mat.mtrl-sci
收藏

$BGaN$中$V_{N}-V_{Ga}$复合物的电子顺磁共振

Electron Paramagnetic Resonance of $V_{N}-V_{Ga}$ complex in $BGaN$

Jakub Kierdaszuk, Ewelina. B. Możdżyńska, Aneta Drabińska, Andrzej Wysmołek, Jacek M. Baranowski

AI总结:

本文研究了掺硼GaN外延层中亚稳态光致EPR信号,结合HRPITS技术将特定陷阱与EPR信号关联,证实其源于$V_{N}-V_{Ga}$复合物,并提出基于深浅施主间电子重新分布的光致EPR模型。

摘要:

本文报道了在840 °C至1090 °C温度范围内生长的掺硼GaN($B_{x}Ga_{1-x}N$)外延层中,低温下出现的亚稳态光致电子顺磁共振(EPR)信号。在所有硼含量介于0.73%至2.51%的样品中,均观察到g = 2.004的各向同性EPR谱线,其强度依赖于生长温度。将EPR强度的温度依赖性与高分辨率光致瞬态光谱(HRPITS)结果进行了对比,从而将特定陷阱与EPR信号联系起来。这些陷阱的活化能与$V_{N}-V_{Ga}$复合物的理论位置一致。EPR信号以30 meV活化能发生的热致湮灭对应于浅施主电离。本文提出了一个解释光致EPR信号的模型,该模型涉及通过光致电离至导带而引起的深施主与浅施主之间的电子重新分布。

英文摘要:

Metastable photoinduced Electron Paramagnetic Resonance (EPR) signal at low temperatures is reported in GaN alloyed with boron ($B_{x}Ga_{1-x}N$) epitaxial layers grown at temperatures ranging from 840 °C to 1090 °C. An isotropic EPR line with g = 2.004 is observed with intensity depending on the growth temperature for all samples with boron content between 0.73% and 2.51%. Temperature dependence of EPR intensities is compared with the results of High-Resolution Photoinduced Transient Spectroscopy (HRPITS). This allows to link particular traps with EPR signal. The activation energies of these traps are consistent with the theoretical position of the $V_{N}-V_{Ga}$ complex. Thermal annihilation of the EPR signal with 30 meV activation energy corresponds to shallow donor ionization. The model explaining light-induced EPR signal involving redistribution of electrons between deep and shallow donors mediated by photoionization to the conduction band is proposed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑