用于量子声动力学的薄膜氮化铝表面声波谐振器
Thin film aluminum nitride surface acoustic wave resonators for quantum acoustodynamics
AI总结：
本文提出薄膜氮化铝 GHz-SAW 谐振器，实现单声子水平最高 5×10^4 的内部品质因数，并验证其可与超导量子电路集成。
摘要：
宏观表面声波（SAW）的量子激发已被定制，以控制、通信和转换静止与飞行量子态。然而，这种混合量子系统有限的寿命仍是扩展其在量子信息处理中应用的关键障碍。在此，我们展示了薄膜氮化铝相较于以往的块状压电衬底，在芯片上将声子与超导量子比特集成的潜力。我们报道了高质量的薄膜 GHz-SAW 谐振器，在单声子水平上具有 5×10^4 的最高内部品质因数 Qi。通过调节样品布局、功率和温度参数，系统研究了 SAW 谐振器的内部损耗。结果表明，压电薄膜上的 SAW 易于与 Josephson 结量子电路的标准制造工艺集成，并为高相干量子声动力学架构提供了优异的声学平台。
英文摘要：
The quantum excitations of macroscopic surface acoustic waves (SAWs) have been tailored to control, communicate and transduce stationary and flying quantum states. However, the limited lifetime of this hybrid quantum systems remains critical obstacles to extend their applications in quantum information processing. Here we present the potentials of thin film aluminum nitride to on-chip integrate phonons with superconducting qubits over previous bulk piezoelectric substrates. We have reported high-quality thin film GHz-SAW resonators with the highest internal quality factor Qi of 5 e4 at the single-phonon level. The internal loss of SAW resonators are systematically investigated with tuning the parameters of sample layout, power and temperature. Our results manifest that SAWs on piezoelectric films are readily integrable with standard fabrication of Josephson junction quantum circuits, and offer excellent acoustic platforms for the high-coherence quantum acoustodynamics architectures.
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