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迈向用于将超导电路与4H-SiC上AlScN中的低损耗微波声子耦合的单片平台

Towards a monolithic platform for coupling superconducting circuits to low-loss microwave phonons in AlScN on 4H-SiC

Yuanchen Deng, William W. Roberts, Sueli Skinner-Ramos, Dalton Anderson, Katherine Hewey, Xingyu Du, Michael Miller, Brandon Smith, Hwijong Lee, Pingping Chen, Charles Thomas Harris, Roy H. Olsson, Lisa Hackett, Rupert Lewis, Matt Eichenfield

arXiv 2607.14319首次发表:更新:

AI 中文总结

研究旨在构建超导电路与低损耗微波声子耦合的单片平台。通过特定架构结合超导电路与压电材料,经选择性去除AlScN实现。实验测得Al-on-SiC谐振器相干寿命及AlScN-on-SiC区域声子传播损耗等数据,证明该平台在量子声学网络等方面颇具潜力。

AI 中文摘要

混合超导-声子量子处理在腔量子电动力学、基于测量的量子计算和其他量子应用方面很有前景。相对于相同频率的微波光子,声子可提供超紧凑尺寸、极低损耗和更强的连通性,且能通过压电效应与超导电路强耦合。然而,这依赖于可扩展平台。本文表征了一种单片量子声学平台,将暴露碳化硅(SiC)上的铝超导电路与SiC上的压电氮化铝钪(AlScN)结合用于集成声子学。通过选择性去除特定芯片区域的AlScN,使铝超导微波谐振器能直接在SiC上制造,同时保留相邻AlScN-on-SiC区域用于声子转导。所得Al-on-SiC谐振器相干寿命为2.9微秒,与铝超导量子器件兼容。对保留的AlScN-on-SiC区域的低温表面声延迟线测量显示在4.05GHz处声子传播损耗低,估计声子寿命为7.6微秒。结合先前约4.3%的机电耦合系数和8%的理论上限,这些结果表明Al-on-SiC/AlScN-on-SiC是用于集成超导微波电路与压电声子组件以实现量子声学网络和混合量子系统的有前景的单片平台。

英文摘要

Hybrid superconducting-phonon quantum processing is promising for cavity QED, measurement-based quantum computing, and other quantum applications. Relative to microwave photons at the same frequency, phonons can provide ultra-compact footprints, extremely low losses, and greater connectivity. Phonons can also couple strongly to superconducting circuits through the piezoelectric effect. However, this promise rests on scalable platforms that achieve these benefits without degrading superconducting circuit performance. This motivates a monolithic platform combining low phononic loss, strong electromechanical coupling, and superconducting-circuit compatibility without requiring suspended phononics. Here, we characterize a monolithic quantum acoustic platform combining aluminum superconducting circuits on exposed silicon carbide (SiC) with piezoelectric aluminum scandium nitride (AlScN) on SiC for integrated phononics. This architecture is enabled by selective removal of AlScN from selected chip regions, allowing aluminum superconducting microwave resonators to be fabricated directly on the SiC while preserving adjacent AlScN-on-SiC regions for phonon transduction. The resulting Al-on-SiC resonators exhibit a coherent lifetime of 2.9 μs, demonstrating compatibility with aluminum superconducting quantum devices. In parallel, cryogenic surface acoustic delay-line measurements on the retained AlScN-on-SiC regions show low phononic propagation loss at 4.05 GHz, corresponding to an estimated phonon lifetime of 7.6 μs. Together with a previously demonstrated electromechanical coupling coefficient of about 4.3% and a theoretical upper bound of 8%, these results establish Al-on-SiC/AlScN-on-SiC as a promising monolithic platform for integrating superconducting microwave circuits with piezoelectric phononic components for quantum acoustic networking and hybrid quantum systems.

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