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arXiv 2303.06231cond-mat.mtrl-sciphysics.app-ph
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$β$-Ga$_{2}$O$_{3}$中的各向异性激子光电流

Anisotropic excitonic photocurrent in $β$-Ga$_{2}$O$_{3}$

Darpan Verma, Md Mohsinur Rahman Adnan, Sushovan Dhara, Chris Sturm, Siddharth Rajan, Roberto C. Myers

AI总结:

本研究在(001) $β$-Ga$_{2}$O$_{3}$ Schottky光电探测器上测量偏振光电流谱,发现4.92、5.15和5.44 eV处激子跃迁峰强度随偏振方向变化,与基于复介电函数张量的各向异性吸收模拟一致,验证了该低对称性超宽带隙半导体的原子能带结构计算。

摘要:

在(001) $β$-Ga$_{2}$O$_{3}$ Schottky光电探测器上测量了偏振依赖的光电流谱,其中光的线偏振在ab平面内旋转。观察到4.92 eV、5.15 eV和5.44 eV处的三个光谱峰,其强度随光学偏振方向变化。峰值跃迁能量与先前在$β$-Ga$_{2}$O$_{3}$中报道的激子一致,这些激子由价带p轨道各向异性与电子-空穴库仑吸引修正的带间跃迁引起。测得的光电流偏振依赖性与基于各向异性吸收电磁模拟的预测相符,该模拟使用了从先前椭偏测量研究中提取的复介电函数张量。这些结果说明了激子吸收和光电流在$β$-Ga$_{2}$O$_{3}$中带隙上下的主导地位,展示了对各向异性光生载流子产生的理论/实验综合理解,并验证了先前关于此低对称性超宽带隙半导体的原子能带结构计算。

英文摘要:

Polarization dependent photocurrent spectra are measured on a (001) $β$-Ga$_{2}$O$_{3}$ Schottky photodetector, where the linear polarization of light is rotated within the ab plane. Three spectral peaks at 4.92 eV, 5.15 eV, and 5.44 eV are observed that vary in intensity with the optical polarization direction. The peak transition energies are consistent with excitons previously reported in $β$-Ga$_{2}$O$_{3}$ due to interband transitions modified by the valence band p-orbital anisotropy and the electron-hole Coulombic attraction. The measured polarization-dependence of the photocurrent matches our predictions based on electromagnetic simulations of anisotropic absorption using the complex dielectric function tensor extracted from previous ellipsometry studies. These results illustrate the dominance of excitonic absorption and photocurrent in $β$-Ga$_{2}$O$_{3}$ both below and above the band gap, demonstrate a combined theoretical/experimental understanding of anisotropic photocarrier generation, and validate previous atomistic band structure calculations in this low-symmetry ultra-wide band gap semiconductor.

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