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arXiv 2303.04499cond-mat.supr-concond-mat.str-el
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电荷密度波超导体LaPt₂Si₂中的非常规临界行为与Q依赖的电子-声子耦合诱导的声子软化

Non-Conventional Critical Behavior and Q-dependent Electron-Phonon Coupling Induced Phonon Softening in the CDW Superconductor LaPt2Si2

Elisabetta Nocerino, Uwe Stuhr, Irene San Lorenzo, Federico Mazza, Daniel Mazzone, Johan Hellsvik, Shunsuke Hasegawa, Shinichiro Asai, Takatsugu Masuda, Arianna… 展开作者

Elisabetta Nocerino, Uwe Stuhr, Irene San Lorenzo, Federico Mazza, Daniel Mazzone, Johan Hellsvik, Shunsuke Hasegawa, Shinichiro Asai, Takatsugu Masuda, Arianna Minelli, Zakir Hossain, Arumugam Thamizhavel, Kim Lefmann, Yasmine Sassa, Martin Månsson

AI总结:

本研究通过非弹性中子散射首次观测单晶LaPt₂Si₂的声子软化,发现其CDW相变的非常规临界行为,明确两个不等价层中不同温度CDW转变的驱动机制,纠正此前相关误读。

摘要:

本文报道了利用非弹性中子散射对单晶LaPt₂Si₂中的声子及其软化现象的首次实验观测。通过紧邻电荷密度波(CDW)q矢量的声子频率的温度依赖关系,我们得到CDW转变温度T_CDW = 230 K,临界指数β = 0.28 ± 0.03。该数值表明LaPt₂Si₂的CDW相变存在非常规临界行为,与CDW失配(DC)的情形相符。这种失配由该材料中存在的两种CDW导致,它们分别在不等价的(Si1-Pt2-Si1)层和(Pt1-Si2-Pt1)层中独立传播,转变温度分别为T_{CDW-1} = 230 K和T_{CDW-2} = 110 K。研究发现,强q依赖的电子-声子耦合是T_{CDW-1} = 230 K处CDW转变的驱动机制,而T_{CDW-2} = 110 K处的转变则被认为由具有三维特征的CDW及费米面准嵌套驱动。我们的结果厘清了此前理论预测和实验观测中对LaPt₂Si₂的CDW转变的一些误读,为其实际温度依赖特性提供了直接见解。

英文摘要:

This paper reports the first experimental observation of phonons and their softening on single crystalline LaPt$_2$Si$_2$ via inelastic neutron scattering. From the temperature dependence of the phonon frequency in close proximity to the charge-density wave (CDW) $q$-vector, we obtain a CDW transition temperature of T$_{CDW}$ = 230 K and a critical exponent $β$ = 0.28 $\pm$ 0.03. This value is suggestive of a non-conventional critical behavior for the CDW phase transition in LaPt$_2$Si$_2$, compatible with a scenario of CDW discommensuration (DC). The DC would be caused by the existence of two CDWs in this material, propagating separately in the non equivalent (Si1-Pt2-Si1) and (Pt1-Si2-Pt1) layers respectively, with transition temperatures T$_{CDW-1}$ = 230 K and T$_{CDW-2}$ = 110 K. A strong $q$-dependence of the electron-phonon coupling has been identified as the driving mechanism for the CDW transition at T$_{CDW-1}$ = 230 K while a CDW with 3-dimensional character, and Fermi surface quasi-nesting as a driving mechanism, is suggested for the transition at T$_{CDW-2}$ = 110 K. Our results clarify some aspects of the CDW transition in LaPt$_2$Si$_2$, which have been so far misinterpreted by both theoretical predictions and experimental observations, and give direct insight into its actual temperature dependence.

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