Coherent control of ensembles of light emitters by means of multi-wave mixing processes is key for the realization of high capacity optical quantum memories and information processing devices. In this context, semiconductor quantum dots placed in optical microcavities represent excellent candidates to explore strong light-matter interactions beyond the limits of perturbative non-linear optics and control the unitary evolution of optically driven quantum systems. In this work, we demonstrate that a sequence of two optical picosecond pulses can be used to establish coherent control over the phase evolution of the ensemble of trions in (In,Ga)As quantum dots independent of their initial quantum state. Our approach is based on coherent transfer between degenerate multi-wave-mixing signals in the strong field limit where Rabi rotations in multi-level systems take place. In particular, we use the two-pulse photon echo sequence to uncover the coherent dynamics of the trion ensemble, whereas the areas of two additional control pulses serve as tuning knobs for adjusting the magnitude and timing of the coherent emission. Furthermore, we make use of the spin degeneracy of ground and excited state of trions to control the polarization state of the emitted signal. Surprisingly, we reveal that the use of optical control pulses, whose durations are comparable to the dephasing time of the ensemble, lifts the temporal degeneracy between wave-mixing processes of different order. This phenomenon is manifested in a significant modification of the temporal shape of the coherent optical response for strong optical fields. Lifting the temporal degeneracy allows to smoothly trace the transition from the perturbative to the regime of Rabi rotations and opens up new possibilities for the optical investigation of complex energy level structures in so far unexplored material systems.
The propagation of a coherent optical linear wave in an ensemble of semiconductor quantum dots is considered. It is shown that a distribution of transition dipole moments of the quantum dots changes significantly the polarization and Beer's absorption length of the ensemble of quantum dots. Explicit analytical expressions for these quantities are presented.
The lattice mismatch strain field of core/multishell structures with spherical symmetry is modeled by a linear continuum elasticity approach. The effect of the strain on the energy structure and linear optical absorption in large core/shell/shell spherical semiconductor quantum dots is analyzed. Localization of the photoexcited carriers induced by coating is found to play an important role in explaining the optical stability of large CdSe/CdS/ZnS and ZnTe/ZnSe/ZnS quantum dots.
We report a type of solar cells based on graphene/CdTe Schottky heterostructure, which can be improved by surface engineering as graphene is one-atomic thin. By coating a layer of ultrathin CdSe quantum dots onto graphene/CdTe heterostructure, the power conversion efficiency is increased from 2.08% to 3.1%. Photo-induced doping is mainly accounted for this enhancement, as evidenced by transport, photoluminescence and quantum efficiency measurements. This work demonstrates a feasible way of designing solar cells with incorporating one dimensional and two dimensional materials.
Existence of representative longitudinal optical (LO) phonon modes is theoretically discussed for the case of polar semiconductor cylindrical quantum dots embedded in a semiconductor matrix. The approach is developed within the dielectric continuum model considering the Fröhlich interaction between electrons and the confined LO phonons. The theory is applied to cylindrical GaAs/AlAs quantum dots within an adiabatic treatment.
A set of theoretical results on infrared absorption and inelastic (Raman) scattering of light in semiconductor quantum dots is reviewed. When it is possible, qualitative comparisons with recent experimental results are presented.
The spin-orbit coupling influences the total spin of semiconductor quantum dots. We analyze the theoretical prediction for the combined effects of spin-orbit coupling, weak vertical magnetic fields and deformation of the dot. Our results allow the characterization of the quantum dots as spin switches, controllable with electric gates.
We present a theoretical analysis of four-wave mixing in coupled quantum dots subject to inhomogeneous broadening. For the biexciton transitions a clear signature of interdot-coupling appears in the spectra. The possibility of experimental observation is discussed.
new defect-assisted mechanism of multiphonon intraband carrier relaxation in semiconductor quantum dots, where the carrier is found in a coherent superposition of the initial, final, and defect states, is proposed. It is shown that this mechanism is capable of explaining the observed trends in temperature dependences of the intraband relaxation rates for PbSe and CdSe colloidal nanocrystal quantum dots.
The mechanism of Stokes shift in semiconductor quantum dots is investigated by calculating the energy of the excitonic states. We have taken into account all possible contributions to the total electronic energy in the dot, i.e, dielectric mismatch between dot and surrounding medium, the effects of finite barrier height and electron-hole exchange interaction. The Stokes shift is calculated as a function of radius of dot and compared with experimental data on two different semiconductor based quantum dots. These results provide evidence for exchange splitting of excitonic states, as the mechani…
We investigate the characteristic spin dynamics corresponding to semiconductor quantum dots within the multiband envelope function approximation (EFA). By numerically solving an $8\times8$ $k\cdot p$ Hamiltonian we treat systems based on different III-V semiconductor materials.It is shown that, even in the absence of an applied magnetic field, these systems show intrinsic spin dynamics governed by intraband and interband transitions leading to characteristic spin frequencies ranging from the THz to optical frequencies.
The effects of interplay between spin-orbit coupling and Zeeman splitting on weak localisation and universal conductance fluctuations in lateral semiconductor quantum dots are analysed: All possible symmetry classes of corresponding random matrix theories are listed and crossovers between them achievable by sweeping magnetic field and changing the dot parameters are described. We also suggest experiments to measure the spin-orbit coupling constants.
We propose an all-optical implementation of quantum-information processing in semiconductor quantum dots, where electron-hole excitations (excitons) serve as the computational degrees of freedom (qubits). The strong dot confinement leads to a strong renormalization of excitonic states, which, in analogy to NMR-based implementations of quantum-information processing, can be exploited for performing conditional and unconditional qubit operations.
We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate $T$ that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot …
We report here on results of experimental-theoretical investigation of high-order harmonic generation (HHG) in layers of CdSe semiconductor quantum dots of different sizes and a reference bulk CdSe thin film. We observe a strong decrease in the efficiency, up to complete suppression of HHG with energies of quanta above the bandgap for the smallest dots, whereas the intensity of below bandgap harmonics remains weakly affected by the dot size. In addition, it is observed that the ratio between suppression of above gap harmonics versus below gap harmonics increases with driving wavelength. We sug…
The electronic spin precession in semiconductor dots is strongly affected by the spin-orbit coupling. We present a theory of the electronic spin resonance at low magnetic fields that predicts a strong dependence on the dot occupation, the magnetic field and the spin-orbit coupling strength. Coulomb interaction effects are also taken into account in a numerical approach.
The theory of elastic light scattering by semiconductor quantum dots is suggested. The semiclassical method, applying retarded potentials to avoid the problem of bounder conditions for electric and magnetic field, is used. The exact results for the Pointing vector on large distances from a quantum dot, formulas of differential cross sections of light scattering for the monochromatic and pulse irradiation are obtained.
We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation rates are found to depend strongly on the dot size, magnetic field and temperature. For typical quantum dots and temperatures below 100 K, the zero--magnetic field relaxation times are long compared to the exciton lifetime, yet they are strongly reduced in high magnetic fields. We discuss explicitly quantum dots based on (In,Ga)As and (Cd,Zn)Se semiconductor …
Elastic strain changes the energies of the conduction band in a semiconductor, which will affect transport through a semiconductor nanostructure. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots (QDs). We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.
An intense laser pulse propagating in a medium of inhomogeneously broadened quantum dots massively creates entangled exciton states. After passage of the pulse all single-exciton states remain unpopulated (self-induced transparency) whereas biexciton coherence (exciton entanglement) is generated through two-photon transitions. We propose several experimental techniques for the observation of such unexpected behavior.
We calculate the near-field optical spectra of excitons and biexcitons in semiconductor quantum dots naturally occurring at interface fluctuations in GaAs-based quantum wells, using a non-local description of the response function to a spatially modulated electro-magnetic field. The relative intensity of the lowest, far-field forbidden excitonic states is predicted; the spatial extension of the ground biexciton state is found in agreement with recently published experiments.
While time-dependent perturbation theory shows inefficient carrier-phonon scattering in semiconductor quantum dots, we demonstrate that a quantum kinetic description of carrier-phonon interaction predicts fast carrier capture and relaxation. The considered processes do not fulfill energy conservation in terms of free-carrier energies because polar coupling of localized quantum-dot states strongly modifies this picture.
We introduce a new platform for realizing on-chip quantum electrodynamics using photonic crystal waveguide structures comprised of periodic nanowire arrays with embedded semiconductor quantum dots to act as quantum light sources. These nanowire-based structures, which can now be fabricated with excellent precision, are found to produce waveguide Purcell factors exceeding 100 and on-chip beta factors up to 99%. We investigate the fundamental optical properties of photonic crystal waveguides and finite-size structures using both photonic band structure calculations and rigorous Green function co…
The optical absorption of a single spherical semiconductor quantum dot in an electrical field is studied taking into account the nonlocal coupling between the field of the light and the polarizability of the semiconductor. These nonlocal effects lead to a small size anf field dependent shift and broadening of the excitonic resonance which may be of interest in future high precision experiments.
A one-band model within the effective mass approximation is adopted to characterize the energy structure and oscillator strength of type-II semiconductor spherical core-shell quantum dots. The heteroepitaxial strain of the core-shell heterostructure is modeled by the elastic continuum approach. The model is applied to ZnTe/ZnSe core-shell, a wide band gap type-II heterostructure. The simulated absorption spectra are in fair agreement with available experimental results.
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge configurations in a silicon metal-oxide-semiconductor double quantum dot tunnel coupled to a single reservoir of electrons. By operating the system in the few-electron regime, the stability diagram shows hysteretic tunnelling events that depend on the history of the dots charge occupancy. We present a model which accounts for the observed hysteretic behaviour by extending the established description for transport in d…
The ground state Lamb shift of a semiconductor spherical Quantum Dot is computed in the effective mass approximation. It appears to be significant enough to be detectable for a wide range of small Quantum Dots synthesized in semiconductors. A possible way to bserve it, via the Casimir effect, is suggested.
Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 10^7 and backgr…
We study phonon-assisted dephasing in optically excited semiconductor quantum dots within the frameworks of the independent Boson model and optimal control. Using a realistic description for the quantum dot states and the phonon coupling, we demonstrate that such dephasing has a drastic impact on the coherent optical response. We employ optimal control theory to search for control strategies that allow to fight decoherence, and show that appropriate tailoring of laser pulses allows a complete control of the optical excitation despite the phonon dephasing.
We report the enhancement of the optical second harmonic signal in non-centrosymmetric semiconductor CdS quantum dots, when they are placed in close contact with isolated silver nanoparticles. The intensity enhancement is about 1000. We also show that the enhancement increases when the incoming laser frequency $ω$ is tuned toward the spectral position of the silver plasmon at $2ω$, proving that the silver nanoparticle modifies the nonlinear emission.
We review spin properties of semiconductor quantum dots and their effect on optical spectra. Photoluminescence and other types of spectroscopy are used to probe neutral and charged excitons in individual quantum dots with high spectral and spatial resolution. Spectral fine structure and polarization reveal how quantum dot spins interact with each other and with their environment. By taking advantage of the selectivity of optical selection rules and spin relaxation, optical spin pumping of the ground state electron and nuclear spins is achieved. Through such mechanisms, light can be used to pro…
This paper describes the modeling of quantum dots lasers with the aim of assessing the conditions for stable cw dual-mode operation when the mode separation lies in the THz range. Several possible models suited for InAs quantum dots in InP barriers are analytically evaluated, in particular quantum dots electrically coupled through a direct exchange of excitation by the wetting layer or quantum dots optically coupled through the homogeneous broadening of their optical gain. A stable dual-mode regime is shown possible in all cases when quantum dots are used as active layer whereas a gain medium …
In this theoretical manuscript I propose a scheme for entangling a single electron semiconductor spin qubit with a single electron semiconductor charge qubit in a triangular triple quantum dot configuration. Two out of three quantum dots are used to define a single electron semiconductor charge qubit. Furthermore, the spin qubit is embedded in the Zeeman sub-levels of the third quantum dot. Combining single qubit gates with entangling CNOT gates allows one to construct a SWAP gate, and therefore to use the semiconductor spin qubit as a long-lived memory for the semiconductor charge qubit.
The cross section of light absorption by semiconductor quantum dots in the case of the resonance with excitons $Γ_6 \times Γ_7$ in cubical crystals $T_d$ is calculated. It is shown that an interference of stimulating and induced electric and magnetic fields must be taken into account. The absorption section is proportional to the exciton nonradiative damping $γ$.
We have observed the Kondo effect in strongly coupled semiconducting nanowire quantum dots. The devices are made from indium arsenide nanowires, grown by molecular beam epitaxy, and contacted by titanium leads. The device transparency can be tuned by changing the potential on a gate electrode, and for increasing transparencies the effects dominating the transport changes from Coulomb Blockade to Universal Conductance Fluctuations with Kondo physics appearing in the intermediate region.
The possibility of a novel type of semiconductor quantum dots obtained by spatially modulating the spin-orbit coupling intensity in III-V heterostructures is discussed. Using the effective mass model we predict confined one-electron states having peculiar spin properties. Furthermore, from mean field calculations (local-spin-density and Hartree-Fock) we find that even two electrons could form a bound state in these dots.
We review and extend the composite fermion theory for semiconductor quantum dots in high magnetic fields. The mean-field model of composite fermions is unsatisfactory for the qualitative physics at high angular momenta. Extensive numerical calculations demonstrate that the microscopic CF theory, which incorporates interactions between composite fermions, provides an excellent qualitative and quantitative account of the quantum dot ground state down to the largest angular momenta studied, and allows systematic improvements by inclusion of mixing between composite fermion Landau levels (called $…
We present an Anderson-type model Hamiltonian with exchange coupling between the localized spins and the confined holes in the quantum dots to study the ferromagnetism in diluted magnetic semiconductor (DMS) quantum dot arrays embedded in semiconductors. The hybridization between the quantum-confined holes in the DMS quantum dots and the itinerant holes in the semiconductor valence band makes hole transfer between quantum dots, which can induce the long range ferromagnetic order of the localized spins. In addition, it makes the carrier spins both in the DMS quantum dots and in the semiconducto…
We develop a Maxwell-Schroedinger formalism in order to describe the radiative interaction mechanism between semiconductor quantum dots. We solve the Maxwell equations for the electromagnetic field coupled to the polarization field of a quantum dot ensemble through a linear non-local susceptibility and compute the polariton resonances of the system. The radiative coupling, mediated by both radiative and surface photon modes, causes the emergence of collective modes whose lifetimes are longer or shorter compared to the ones of non-interacting dots. The magnitude of the coupling and the collecti…
Elastic light scattering by low-dimensional semiconductor objects is investigated theoretically. The differential cross section of resonant light scattering on excitons in quantum dots is calculated. The polarization and angular distribution of scattered light do not depend on the quantum-dot form, sizes and potential configuration if light wave lengths exceed considerably the quantum-dot size. In this case the magnitude of the total light scattering cross section does not depend on quantum-dot sizes. The resonant total light scattering cross section is about a square of light wave length if t…
We present a consistent theoretical description of few-particle effects in the optical spectra of semiconductor quantum dots, based on a direct-diagonalization approach. We show that, because of the strong Coulomb interaction among electrons and holes, each configuration of the confined few-particle system leads to its characteristic signature in the optical spectra. We discuss quantitative predictions and comparison with experiments for both absorption and luminescence.
We study the triplet-singlet relaxation in two-electron semiconductor quantum dots. Both single dots and vertically coupled double dots are discussed. In our work, the electron-electron Coulomb interaction, which plays an important role in the electronic structure, is included. The spin mixing is caused by spin-orbit coupling which is the key to the triplet-singlet relaxation. We show that the selection rule widely used in the literature is incorrect unless near the crossing/anticrossing point in single quantum dots. The triplet/singlet relaxation in double quantum dots can be markedly changed…
We show that the magnetoplasmon collective modes in quasi-two-dimensional semiconductor quantum dots can be parametrically amplified by periodically modulating the magnetic field perpendicular to the nanostructure. The two magnetoplasmon modes are excited and amplified simultaneously, leading to an exponential growth of the number of bosonic excitations in the system. We further demonstrate that damping mechanisms as well as anharmonicities in the confinement of the quantum dot lead to a saturation of the parametric amplification. This work constitutes a first step towards parametric amplifica…
We examine the influence of nuclear spins on the performance of optically induced rotations of single electron spins in semiconductor quantum dots. We consider Raman type optical transitions between electron spin states and take into account the additional effect of the Overhauser field. We calculate average fidelities of rotations around characteristic axes in the presence of nuclear spins analytically with perturbation theory up to second order in the Overhauser field. Moreover, we calculate the fidelity using numerical averaging over the nuclear field distribution, including arbitrary order…
We study the spin dynamics in charged quantum dots in the situation where the resident electron is coupled to only about 200 nuclear spins and where the electron spin splitting induced by the Overhauser field does not exceed markedly the spectral broadening. The formation of a dynamical nuclear polarization as well as its subsequent decay by the dipole-dipole interaction is directly resolved in time. Because not limited by intrinsic nonlinearities, almost complete nuclear polarization is achieved, even at elevated temperatures. The data suggest a nonequilibrium mode of nuclear polarization, di…
Within the Floquet theory of periodically driven quantum systems, we demonstrate that a high-frequency electromagnetic field can be used as an effective tool to control excitonic properties of semiconductor quantum dots (QDs). It is shown, particularly, that the field both decreases the exciton binding energy and dynamically stabilizes the exciton, increasing its radiative lifetime. The developed theory can serve as a basis for the ultrafast method to tune spectral characteristics of the QD-based photon emitters by a high-frequency field.
The optically induced indirect exchange interaction between spins in two quantum dots is investigated theoretically. We present a microscopic formulation of the interaction between the localized spin and the itinerant carriers including the effects of correlation, using a set of canonical transformations. Correlation effects are found to be of comparable magnitude as the direct exchange. We give quantitative results for realistic quantum dot geometries and find the largest couplings for one dimensional systems.
The Jaynes-Cummings model provides a well established theoretical framework for single electron two level systems in a radiation field. Similar exactly solvable models for semiconductor light emitters such as quantum dots dominated by many particle interactions are not known. We access these systems by a generalized cluster expansion, the photon-probability-cluster-expansion: a reliable approach for few photon dynamics in many body electron systems. As a first application, we discuss vacuum Rabi flopping and show that their amplitude determines the number of electrons in the quantum dot.
A theory of an optical vector pulsing soliton of self-induced transparency in an ensemble of semiconductor quantum dots is investigated. It is shown that a distribution of the excitonic ground-state transition dipole moments of the quantum dots and phase modulation changes significantly the pulse parameters. The profile of a circularly polarized optical two-component vector pulsing soliton with the difference and sum of the frequencies in the region of the carrier frequency is presented. It is shown that the vector pulsing soliton in the special case can be reduced to the scalar breather solut…
We have studied spin-flip transitions between Zeeman sublevels in GaAs electron quantum dots. Several different mechanisms which originate from spin-orbit coupling are shown to be responsible for such processes. It is shown that spin-lattice relaxation for the electron localized in a quantum dot is much less effective than for the free electron. The spin-flip rates due to several other mechanisms not related to the spin-orbit interaction are also estimated.
The possibility of non-adiabatic electron pumping in the system of three coupled quantum dots attached to the leads is discussed. We have found out that periodical changing of energy level position in the middle quantum dot results in non zero mean tunneling current appeared due to non-adiabatic non-equilibrium processes. The same principle can be used for fabrication of a new class of semiconductor electronic devices based on non-stationary non-equilibrium currents. As an example we propose a nanometer quantum emitter with non-stationary inverse level occupation achieved by electron pumping.
Theory of exciton fine structure in semiconductor quantum dots and its dependence on quantum dot anisotropy and external lateral electric field is presented. The effective exciton Hamiltonian including long range electron-hole exchange interaction is derived within the k*p effective mass approximation (EMA). The exchange matrix elements of the Hamiltonian are expressed explicitly in terms of electron and hole envelope functions. The matrix element responsible for the "bright" exciton splitting is identified and analyzed. An excitonic fine structure for a model quantum dot with quasi- two-dimen…
We propose a solid-state implementation of stimulated Raman adiabatic passage in two coupled semiconductor quantum dots. Proper combination of two pulsed laser fields allows the coherent carrier transfer between the two nanostructures without suffering significant losses due to environment coupling. By use of a general solution scheme for the carrier states in the double-dot structure, we identify the pertinent dot and laser parameters.
We propose that n-type semiconductor quantum dots with the Rashba and Dresselhaus spin orbit interactions may be used for single electron manipulation through adiabatic transformations between degenerate states. All the energy levels are discrete in quantum dots and possess a double degeneracy due to time reversal symmetryin the presence of the Rashba and/or Dresselhaus spin orbit coupling terms. We find that the presence of double degeneracy does not necessarily give rise to a finite non-Abelian (matrix) Berry phase. We show that a distorted two-dimensional harmonic potential may give rise to…
Semiconductor quantum dots have proven to be a useful platform for quantum simulation in the solid state. However, implementing a superconducting coupling between quantum dots mediated by a Cooper pair has so far suffered from limited tunability and strong suppression. This has limited applications such as Cooper pair splitting and quantum dot simulation of topological Kitaev chains. In this work, we propose how to mediate tunable effective couplings via Andreev bound states in a semiconductor-superconductor nanowire connecting two quantum dots. We show that in this way it is possible to indiv…
Coulomb correlations in the optical spectra of semiconductor quantum dots are investigated using a full-diagonalization approach. The resulting multi-exciton spectra are discussed in terms of the symmetry of the involved states. Characteristic features of the spectra like the nearly equidistantly spaced s-shell emission lines and the approximately constant p-shell transition energies are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Comparisons with previous results in the literature and their interpre…
Theoretical and numerical calculations of two-phonon processes on gated lateral semiconductor quantum dots (QDs) are outlined. A heterostructure made with two laterally coupled QDs, in the presence of an external magnetic field, has been employed in order to study the electron scattering rate due to two-phonon processes. The formalism is based on the acoustic phonon modes via the unscreened deformation potential and the piezoelectric interaction whenever the crystal lattice lacks a center of inversion symmetry. The rates are calculated by using second order perturbation theory. The strong depe…
We propose a scheme to manipulate the spin relaxation in vertically coupled semiconductor double quantum dots. Up to {\em twelve} orders of magnitude variation of the spin relaxation time can be achieved by a small gate voltage applied vertically on the double dot. Different effects such as the dot size, barrier height, inter-dot distance, and magnetic field on the spin relaxation are investigated in detail. The condition to achieve a large variation is discussed.
Quantum effects at the nanometric level have been observed in many confined structures, and particularly in semiconductor quantum dots (QDs). In this work, we propose a theoretical improvement of the so-called effective mass approximation with the introduction of an effective pseudo-potential. This advantageously allows analytic calculations to a large extent, and leads to a better agreement with experimental data. We have obtained, as a function of the QD radius, in precise domains of validity, the QD ground state energy, its Stark and Lamb shifts. An observable Lamb shift is notably predicte…
We show that the addition spectra of semiconductor quantum dots in the presence of magnetic field can be studied through a theoretical scheme that allows an accurate and practical treatment of the single particle states and electron-electron interaction up to large numbers of electrons. The calculated addition spectra exhibit the typical structures of Hund-like shell filling, and account for recent experimental findings. A full three dimensional description of Coulomb interaction is found to be essential for predicting the conductance characteristics of few-electron semiconductor structures.
