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arXiv 2301.13619physics.optics
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低折射率氮氧化硅平台的布里渊和克尔非线性

Brillouin and Kerr nonlinearities of a low-index silicon oxynitride platform

Kaixuan Ye, Yvan Klaver, Oscar A Jimenez Gordillo, Roel Botter, Okky Daulay, Francesco Morichetti, Andrea Melloni, David Marpaung

摘要:

受激布里渊散射(SBS)和四波混频(FWM)等非线性光学效应在微波光子学、光学频率梳和量子光子学中起着重要作用。在低损耗和多功能的集成平台中利用SBS和FWM将为构建大规模基于布里渊/克尔的光子集成电路开辟道路。在这封信中,我们调查的布里渊和克尔特性的低折射率(n= 1.513@1550 nm)的氮氧化硅(SiON)平台。我们观察到,第一次,后向SBS在SiON波导的布里渊增益系数为0.3 $\rm m^{-1}W^{-1}$,它可以潜在地增加到0.95 $\rm m^{-1}W^{-1}$通过只是定制的波导截面。我们还在SiON环中进行了四波混频实验,得到了非线性参数$γ$ = 0.02 $\rm m^{-1}W^{-1}$ .我们的研究结果指向一个低损耗和低折射率的光子集成平台,这是布里渊和克尔有源。

英文摘要:

Nonlinear optical effects including stimulated Brillouin scattering (SBS) and four-wave mixing (FWM) play an important role in microwave photonics, optical frequency combs, and quantum photonics. Harnessing SBS and FWM in a low-loss and versatile integrated platform would open the path to building large-scale Brillouin/Kerr-based photonic integrated circuits. In this letter, we investigate the Brillouin and Kerr properties of a low-index (n=1.513 @ 1550 nm) silicon oxynitride (SiON) platform. We observed, for the first time, backward SBS in SiON waveguides with a Brillouin gain coefficient of 0.3$\rm m^{-1}W^{-1}$, which can potentially be increased to 0.95$\rm m^{-1}W^{-1}$ by just tailoring the waveguide cross-section. We also performed FWM experiments in SiON rings and obtained the nonlinear parameter $γ$, of 0.02 $\rm m^{-1}W^{-1}$. Our results point to a low-loss and low-index photonic integrated platform that is both Brillouin and Kerr active.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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