发表机构
National Institute of Standards and Technology; Adelaide University; The University of Sydney; Macquarie University（美国国家标准与技术研究院; 阿德莱德大学; 悉尼大学; 麦考瑞大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本文提出 InGaP-on-Insulator 集成平台，实现高增益（588 W⁻¹m⁻¹）和创纪录窄线宽（5.2 MHz）的受激布里渊散射，为可扩展布里渊光子学奠定基础。
AI 中文摘要
受激布里渊散射（SBS）是固体中光波与声波之间的一种非线性相互作用。最初被视为光纤中的寄生过程，如今它在微波光子学应用中引起了广泛关注，例如光信号处理和窄线宽激光器。尽管许多布里渊系统已在光子芯片上得到演示，但它们难以在可扩展的平台上同时提供高布里渊增益和窄线宽，并能够与成熟的光子集成电路集成。在此，我们提出了一种新型的 InGaP-on-SiO$_2$ 集成平台，其中单晶 InGaP 波导层具有优异的材料特性和强非线性，可在 1550 nm 波长附近支持 SBS。我们演示了后向 SBS，测得高布里渊增益系数为 $588\\, \mathrm{W}^{-1}\\,\mathrm{m}^{-1}$，并在 9.346 GHz 频移处实现了创纪录的 5.2 MHz 窄线宽。这项工作建立了晶圆级互补金属氧化物半导体兼容的制造工艺，为高增益和窄线宽布里渊光子学开辟了可扩展的路径，其应用包括精密信号处理。
英文摘要
Stimulated Brillouin Scattering (SBS) is a nonlinear interaction between optical and acoustic waves in solids. First regarded as a parasitic process in optical fibers, it has gathered significant interest in microwave photonic applications such as optical signal processing and narrow linewidth lasers. While many Brillouin system demonstrations have been done on photonic chips, they struggle to provide simultaneous high Brillouin gain and narrow linewidth in a scalable platform, capable of integration with established photonic integrated circuits. Here, we present a novel integrated InGaP-on-SiO$_2$ platform, where a single crystalline InGaP waveguide layer offers superior material properties and strong nonlinearities to support SBS near 1550 nm wavelength. We demonstrate backward SBS with a measured high Brillouin gain coefficient of $588\, \mathrm{W}^{-1}\,\mathrm{m}^{-1}$ and a record narrow linewidth of 5.2 MHz at 9.346 GHz frequency shift. This work establishes a wafer-scale complementary metal-oxide semiconductor compatible fabrication process, paving a scalable path for high gain and narrow linewidth Brillouin photonics with applications such as precision signal processing.
