集成氮化硅与薄膜铌酸锂平台中的声电增强声光调制
Acoustoelectrically enhanced acousto-optic modulation in an integrated silicon nitride and thin film lithium niobate platform
- Sandia National Laboratories（桑迪亚国家实验室）
- Northern Arizona University（北亚利桑那大学）
- University of Colorado, Boulder（科罗拉多大学博尔德分校）
- Yale University（耶鲁大学）
机构由 AI 辅助整理，请以论文原文为准。
AI总结：
本研究首次在集成氮化硅与薄膜铌酸锂平台上实现声电增强声光调制，通过片上声电放大达60 dB，实现低功耗高效相位调制，并提出了可替代光纤延迟的声电增强光声振荡器方案。
AI中文摘要：
压电-半导体异质结构中的声电相互作用能够控制并显著增强压电介质中微波频率声子的传播特性，提供电可控的声子增益、大范围速度调谐、隔离与循环，以及极大的电子介导声子非线性。在此，我们首次利用绝缘体上铌酸锂与InGaAs构建了这种压电-半导体异质结构，并通过添加氮化硅波导及对声学材料进行改性以提供光学下包层，使其同时支持导波光学模式。我们利用这一新架构演示了声电增强的声光调制，其中1 GHz声子被压电产生并在芯片上经声电放大高达60 dB后作用于光学波导，实现纯相位调制，其$V_\pi L$品质因数为0.077 V-cm，而放大仅消耗3.77 mW直流电功率。随后，我们探讨了这些功能所启用的未来应用，并描述了一种新颖的可调光学延迟以及一个光电振荡器（OEO）的类比——声电增强的光声振荡器（AE-OAO）。我们表明，利用布里渊光机械换能与声电无损耗声学时间延迟，AE-OAO可在单块厘米级芯片上替代OEO中使用的数公里光纤延迟线。
英文摘要：
Acoustoelectric interactions in piezoelectric-semiconductor heterostructures allow the propagation characteristics of microwave frequency phonons in piezoelectric media to be controlled and radically enhanced, providing electrically controllable phonon gain, large velocity tuning, isolation, and circulation, as well as extremely large electron-mediated phononic nonlinearities. Here, for the first time, we create such a piezoelectric-semiconductor heterostructure with lithium-niobate-on-insulator and InGaAs that also supports guided optical modes through the addition of a silicon nitride waveguide and modification of the acoustic materials to provide an optical lower cladding. We use this new architecture to demonstrate acoustoelectrically enhanced acousto-optic modulation, where 1 GHz phonons are piezoelectrically generated and acoustoelectrically amplified on-chip by up to 60 dB before impinging on the optical waveguide, providing pure phase modulation with a $V_πL$ figure-of-merit of 0.077 V-cm while only consuming 3.77 mW of DC electrical power to provide the amplification. We then consider future applications enabled by these functionalities and describe a novel tunable optical delay and an optoelectronic oscillator (OEO) analog---an acoustoelectrically enhanced opto-acoustic oscillator (AE-OAO). We show that using Brillouin optomechanical transduction and acoustoelectrically lossless acoustic time delay, the AE-OAO could replace kilometers of optical fiber delay used in OEOs but on a single, centimeter-scale chip.
