MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ 与 MnSb$_2$Te$_4$(Sb$_2$Te$_3$)$_n$（n = 0, 1）薄膜中的铁电可切换磁性多态
Ferroelectrically switchable magnetic multistates in MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and MnSb$_2$Te$_4$(Sb$_2$Te$_3$)$_n$ (n = 0, 1) thin films
AI总结：
该研究结合 Heisenberg 模型与第一性原理计算，提出利用铁电极化开关 Mn-$e_g$ 层间跃迁通道，实现 MnBi$_2$Te$_4$ 家族薄膜中反铁磁/铁磁及多 Chern 数拓扑磁性多态的可切换调控。
摘要：
对二维磁性的铁电控制在制造高速、低能耗电子器件方面具有广阔前景。新近发现的层状 MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ 及其 Sb 对应物表现出 A 型反铁磁性，并具有引人关注的拓扑性质。本文基于 Heisenberg 模型和第一性原理计算，提出通过铁电方式调控层间磁耦合（IMCs），在其薄膜中获得可调磁性多态。我们的策略依赖于：将薄膜与适当的铁电材料界面结合，可在极化反转时开启/关闭 Mn-$e_g$ 轨道之间的层间跃迁通道，从而产生可切换的层间反铁磁—铁磁转变。另一方面，界面效应导致两种极化态具有不对称的能垒高度。这些性质使我们能够在薄膜中构建具有多个 Chern 数的铁电可切换三重和四重磁性态。本研究表明，通过合理设计，可在 MnBi$_2$Te$_4$ 家族中获得铁电可切换的磁性和拓扑多态，用于多功能电子器件，该思路也可推广至其他二维磁性材料。
英文摘要：
Ferroelectric control of two-dimensional magnetism is promising in fabricating electronic devices with high speed and low energy consumption. The newly discovered layered MnBi$_2$Te$_4$(Bi$_2$Te$_3$)$_n$ and their Sb counterparts exhibit A-type antiferromagnetism with intriguing topological properties. Here, we propose to obtain tunable magnetic multistates in their thin films by ferroelectrically manipulating the interlayer magnetic couplings (IMCs) based on the Heisenberg model and first-principles calculations. Our strategy relies on that interfacing the thin films with appropriate ferroelectric materials can switch on/off an interlayer hopping channel between Mn-$e_g$ orbitals as the polarizations reversed, thus resulting in a switchable interlayer antiferromagnetism-to-ferromagnetism transition. On the other hand, the interface effect leads to asymmetric energy barrier heights for the two polarization states. These properties allow us to build ferroelectrically switchable triple and quadruple magnetic states with multiple Chern numbers in thin films. Our study reveals that ferroelectrically switchable magnetic and topological multistates in MnBi$_2$Te$_4$ family can be obtained by rational design for multifunctional electronic devices, which can also be applied to other two-dimensional magnetic materials.
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