在莫尔量子反常霍尔绝缘体中可视化并操控手性界面态
Visualizing and manipulating chiral interface states in a moiré quantum anomalous Hall insulator
AI总结：
本研究在转角单层-双层石墨烯量子反常霍尔绝缘体中操控陈数畴，借助STM直接成像手性界面态波函数，还可诱导新畴创建可调手性的界面态，证实了其手性并确定谷极化反转特征尺度，为关联莫尔系统拓扑性质研究提供平台。
摘要：
由堆叠二维材料构成的莫尔系统拥有新型关联态与拓扑态，可通过施加栅极电压实现电学调控。我们利用该技术，在由转角单层-双层石墨烯（tMBLG）制备的相互作用驱动型量子反常霍尔绝缘体中操控陈数畴。这使得我们能够借助扫描隧道显微镜（STM）直接成像手性界面态的波函数。为实现这一目标，研究人员调控tMBLG的载流子浓度，以稳定具有相反陈数的相邻畴，从而构建完全不存在结构边界的拓扑界面。研究利用STM针尖脉冲诱导产生的量子点来诱导新的陈数畴，进而在预设位置创建具有可调手性的新型手性界面态。理论分析证实了观测到的界面态的手性特性，并得以确定相邻tMBLG陈数畴之间谷极化反转的特征长度尺度。研究表明，tMBLG是用于成像关联莫尔系统奇异拓扑性质的实用平台。
英文摘要：
Moiré systems made from stacked two-dimensional materials host novel correlated and topological states that can be electrically controlled via applied gate voltages. We have used this technique to manipulate Chern domains in an interaction-driven quantum anomalous Hall insulator made from twisted monolayer-bilayer graphene (tMBLG). This has allowed the wavefunction of chiral interface states to be directly imaged using a scanning tunneling microscope (STM). To accomplish this tMBLG carrier concentration was tuned to stabilize neighboring domains of opposite Chern number, thus providing topological interfaces completely devoid of any structural boundaries. STM tip pulse-induced quantum dots were utilized to induce new Chern domains and thereby create new chiral interface states with tunable chirality at predetermined locations. Theoretical analysis confirms the chiral nature of observed interface states and enables the determination of the characteristic length scale of valley polarization reversal across neighboring tMBLG Chern domains. tMBLG is shown to be a useful platform for imaging the exotic topological properties of correlated moiré systems.
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