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arXiv 2210.09792cond-mat.mes-hall
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溅射Bi $_x$ Se $_{1-x}$的全电自旋-电荷转换

All-electrical spin-to-charge conversion in sputtered Bi$_x$Se$_{1-x}$

Won Young Choi, Isabel C. Arango, Van Tuong Pham, Diogo C. Vaz, Haozhe Yang, Inge Groen, Chia-Ching Lin, Emily S. Kabir, Kaan Oguz, Punyashloka Debashis, John J… 展开作者

Won Young Choi, Isabel C. Arango, Van Tuong Pham, Diogo C. Vaz, Haozhe Yang, Inge Groen, Chia-Ching Lin, Emily S. Kabir, Kaan Oguz, Punyashloka Debashis, John J. Plombon, Hai Li, Dmitri E. Nikonov, Andrey Chuvilin, Luis E. Hueso, Ian A. Young, Fèlix Casanova

摘要:

实现诸如MESO逻辑器件的自旋电子器件的主要障碍之一是用于磁化读出的小信号幅度,这使得找到具有高自旋-电荷转换效率的材料很重要。虽然在两种材料的交界处的混合是一个广泛发生的现象,其对材料的特性和自旋-电荷转换效率的估计的影响很容易被忽视或低估。在这里,我们证明了所有的电自旋-电荷转换在Bi $_x$硒$_{1-x}$纳米器件,并显示如何转换效率可以高估了几十倍,这取决于相邻的金属用作接触。我们把这归因于混合引起的成分变化和多晶的性质,导致电阻率和自旋霍尔角的急剧变化。讨论了在类似结构的功能器件中提高自旋电荷转换信号的策略。

英文摘要:

One of the major obstacles to realizing spintronic devices such as MESO logic devices is the small signal magnitude used for magnetization readout, making it important to find materials with high spin-to-charge conversion efficiency. Although intermixing at the junction of two materials is a widely occurring phenomenon, its influence on material characterization and the estimation of spin-to-charge conversion efficiencies is easily neglected or underestimated. Here, we demonstrate all electrical spin-to-charge conversion in Bi$_x$Se$_{1-x}$ nanodevices and show how the conversion efficiency can be overestimated by tens of times depending on the adjacent metal used as a contact. We attribute this to the intermixing-induced compositional change and the properties of a polycrystal that lead to drastic changes in resistivity and spin Hall angle. Strategies to improve the spin-to-charge conversion signal in similar structures for functional devices are discussed.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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