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arXiv 2210.09031cond-mat.mtrl-sci
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WTe $_{2}$中电荷-自旋转换的铁电控制

Ferroelectric control of charge-to-spin conversion in WTe$_{2}$

Homayoun Jafari, Arunesh Roy, Jagoda Sławińska

摘要:

铁电材料在替代存储器和计算方面具有巨大的潜力,但在将这些想法应用于实际应用之前,还需要克服一些挑战。在这种情况下,最近发现的电极化的强度和自旋织构之间的联系,在某些类别的铁电体扩展的前景设计的设备,可以同时受益于铁电和自旋电子性能。在这里,我们探讨的概念,非易失性铁电控制的电荷到自旋转换在半金属WTe $_2$,这可能提供一种非破坏性读出的极性状态。基于第一性原理模拟,我们表明,Rashba-Edelstein效应(REE),将电流转换为自旋积累开关后的电极化的强度反转其符号。稀土元素的数值,计算的第一次为散装和双层WTe $_2$,表明转换是相当大的,甚至在室温下可能仍然很大。非磁性材料中自旋输运的铁电控制提供了类似于多铁性的功能,并且允许设计将低功率下的信息铁电写入与状态的自旋轨道读出相结合的存储器或存储器中逻辑器件。

英文摘要:

Ferroelectric materials hold great potential for alternative memories and computing, but several challenges need to be overcome before bringing the ideas to applications. In this context, the recently discovered link between electric polarization and spin textures in some classes of ferroelectrics expands the perspectives of the design of devices that could simultaneously benefit from ferroelectric and spintronic properties. Here, we explore the concept of non-volatile ferroelectric control of charge-to-spin conversion in semimetallic WTe$_2$, which may provide a way for non-destructive read-out of the polar state. Based on the first-principles simulations, we show that the Rashba-Edelstein effect (REE) that converts electric currents into spin accumulation switches its sign upon the reversal of the electric polarization. The numerical values of REE, calculated for the first time for both bulk and bilayer WTe$_2$, demonstrate that the conversion is sizable, and may remain large even at room temperature. The ferroelectric control of spin transport in non-magnetic materials provides functionalities similar to multiferroics and allows the design of memories or logic-in-memory devices that combine ferroelectric writing of information at low power with the spin-orbit read-out of state.

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