arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2209.11641cond-mat.mes-hallphysics.optics
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从隧穿电子到激子的能量转移

Energy transfer from tunneling electrons to excitons

Sotirios Papadopoulos, Lujun Wang, Takashi Taniguchi, Kenji Watanabe, Lukas Novotny

摘要:

光电子器件中的激子通过光激发、外部载流子注入或利用预先存在的电荷产生。在这里,我们揭示了一种新的方法来电产生激子的过渡金属二硫属化物(TMD)。TMD被放置在金-hBN-石墨烯隧道结的顶部,在隧穿路径的外部。该电驱动装置的特征在于在TMD的激子能量处具有明显峰值的光电发射光谱。我们解释这一观察激子产生的能量转移从隧道电子,这是进一步支持的理论模型的基础上非弹性电子隧穿。我们的研究结果引入了一个新的范德华异质结中激子的产生范例,并为一类新的光电子器件提供了灵感,其中光学活性材料与电通路分离。

英文摘要:

Excitons in optoelectronic devices have been generated through optical excitation, external carrier injection, or employing pre-existing charges. Here, we reveal a new way to electrically generate excitons in transition metal dichalcogenides (TMDs). The TMD is placed on top of a gold-hBN-graphene tunnel junction, outside of the tunneling pathway. This electrically driven device features a photoemission spectrum with a distinct peak at the exciton energy of the TMD. We interpret this observation as exciton generation by energy transfer from tunneling electrons, which is further supported by a theoretical model based on inelastic electron tunneling. Our findings introduce a new paradigm for exciton creation in van der Waals heterostructures and provide inspiration for a new class of optoelectronic devices in which the optically active material is separated from the electrical pathway.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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