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arXiv 2209.08677cond-mat.mes-hall
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二维材料中声子拖曳对单声子的量子传感

Quantum Sensing of Single Phonons via Phonon Drag in Two-Dimensional Materials

Ali Kefayati, Jonathan P. Bird, Vasili Perebeinos

摘要:

最终在单声子极限下电检测声子的能力是用于基于声子的量子计算(所谓的量子声子学)的许多方案的关键要求。在这里,我们预测,通过利用它们的电子与表面极性声子的强耦合,范德华异质结构可以为声子传感提供一个合适的平台,能够在单声子水平上解决能量转移。我们考虑的几何形状是一个拖动动量施加在石墨烯层中的电子上,通过六方氮化硼介电层中的单个失衡声子,产生可测量的感应电压($V_{\rm drag}$)。我们的玻尔兹曼输运方程的数值解表明,这种阻力电压可以达到几百微伏每声子的水平,远高于实验检测限。此外,我们预测,$V_{\rm drag}$应该是高度不敏感的石墨烯层中的载流子的迁移率,并增加温度至少300 K,提供了一个多功能的材料平台的潜力,单声子传感。

英文摘要:

The capacity to electrically detect phonons, ultimately at the single-phonon limit, is a key requirement for many schemes for phonon-based quantum computing, so-called quantum phononics. Here, we predict that by exploiting the strong coupling of their electrons to surface-polar phonons, van der Waals heterostructures can offer a suitable platform for phonon sensing, capable of resolving energy transfer at the single-phonon level. The geometry we consider is one in which a drag momentum is exerted on electrons in a graphene layer, by a single out-of-equilibrium phonon in a dielectric layer of hexagonal boron nitride, giving rise to a measurable induced voltage ($V_{\rm drag}$). Our numerical solution of the Boltzmann Transport Equation shows that this drag voltage can reach a level of a few hundred microvolts per phonon, well above experimental detection limits. Furthermore, we predict that $V_{\rm drag}$ should be highly insensitive to the mobility of carriers in the graphene layer and to increasing the temperature to at least 300 K, offering the potential of a versatile material platform for single-phonon sensing.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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