We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of \textit{vector} character of deformations caused in the crystalline lattice by any point defects siting asymmetrically in the unit cell. In result, local lattice compression due to the elastic deformations decay as $1/r^2$ with distance from impurity. Electron scattering (due to standard deformation potential) on such defects leads to low-temperature mobility $μ(n)$ scaling with electron density $n$ of the form $μ(n) \propto n^{-2/3}$ that is close to experimental observations on a number of relevant materials.
Carbon-doped high mobility two-dimensional hole gases grown on (110) oriented GaAs substrates have been grown with hole mobilities exceeding 10^6 cm^2/Vs in single heterojunction GaAs/AlGaAs structures. At these high mobilities, a pronounced mobility anisotropy has been observed. Rashba induced spin-splitting in these asymmetric structures has been found to be independent on the transport direction.
The temperature dependent Hall mobility data from La-doped SrTiO3 thin films has been analyzed and modeled considering various electron scattering mechanisms. We find that a ~6 meV transverse optical phonon (TO) deformation potential scattering mechanism is necessary to explain the dependence of transport on temperature between 10-200 K. Also, we find that the low temperature electron mobility in intrinsic (nominally undoped) SrTiO3 is limited by acoustic phonon scattering. Adding the above two scattering mechanisms to longitudinal optical phonon (LO) and ionized impurity scattering mechanisms…
We investigate the carrier mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2-4 nm of top dielectric and remains constant for thicker layers. The carrier mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the carrier mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for th…
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a two-dimensional electron system (2DES) in the strained Si quantum well can be controllably tuned from 2.5$\times10^{11}$cm$^{-2}$ to 4.5$\times10^{11}$cm$^{-2}$, virtually without any gate leakage current. Magnetotransport data show the homogeneous depletion of 2DES under gate biases. The characteristic of vertical modulation using ALD dielectric is shown to be bet…
Transmission and reflection of an electromagnetic pulse through a dielectric slab doped with the quantum dot molecules is investigated. It is shown that the transmitted and reflected pulses depend on the inter-dot tunneling effect and can be controlled by applying a gate voltage.
We have theoretically studied the dielectric environment effect on the charged-impurity-limited carrier mobility of graphene double-layer structure (GDLS) on the basis of the Boltzmann transport theory. In this system, two graphene layers are separated by a dielectric barrier layer. It is pointed out that the carrier mobility strongly depends on the dielectric constant of the barrier layer when the interlayer distance becomes larger than the inverse of the Fermi wave vector. Moreover, the conditions to improve the charged-impurity-limited carrier mobility of the GDLS are evaluated.
We fabricate MoS2 field effect transistors on both SiO2 and polymethyl methacrylate (PMMA) dielectrics and measure charge carrier mobility in a four-probe configuration. For multilayer MoS2 on SiO2, the mobility is 30-60 cm2/Vs, relatively independent of thickness (15-90 nm), and most devices exhibit unipolar n-type behavior. In contrast, multilayer MoS2 on PMMA shows mobility increasing with thickness, up to 470 cm2/Vs (electrons) and 480 cm2/Vs (holes) at thickness ~50 nm. The dependence of the mobility on thickness points to a long-range dielectric effect of the bulk MoS2 in increasing mobi…
The dielectric environment of thin semiconductor nanowires can affect the charge transport properties inside the wire. In this work, it is shown that Coulomb impurity scattering inside thin nanowires can be damped strongly by coating the wire with a high-k dielectric. This will lead to an increase in the mobility of free charges inside the wire.
The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped structures. The calculation matches very well the experimental results over a wide range of electron density. The mobility typically varies between 1100 cm2/Vs in highly-doped structures and 2800 cm2/Vs at low electron density. The mobility is shown to be significantly influenced by the thickness of the spacer layer separating the strained Si channel from the pulse-d…
We utilize an organic polymer buffer layer between graphene and conventional gate dielectrics in top-gated graphene transistors. Unlike other insulators, this dielectric stack does not significantly degrade carrier mobility, allowing for high field-effect mobilities to be retained in top-gate operation. This is demonstrated in both two-point and four-point analysis, and in the high-frequency operation of a graphene transistor. Temperature dependence of the carrier mobility suggests that phonons are the dominant scatterers in these devices.
We calculate the contribution to the electron scattering rate from the surface level atoms (SLA), proposed in [A.M. Dyugaev, P.D. Grigoriev, JETP Lett. 78, 466 (2003)]. The inclusion of these states into account was sufficient to explain the long-standing puzzles in the temperature dependence of the surface tension of both He isotopes and to reach a very good agreement between theory and experiment. We calculate the contribution from these SLA to the surface electron scattering rate and explain some features in the temperature dependence of the surface electron mobility. This contribution is e…
We propose a simple experimental technique to separately map the emission from electric and magnetic dipole transitions close to single dielectric nanostructures, using a few nanometer thin film of rare-earth ion doped clusters. Rare-earth ions provide electric and magnetic dipole transitions of similar magnitude. By recording the photoluminescence from the deposited layer excited by a focused laser beam, we are able to simultaneously map the electric and magnetic emission enhancement on individual nanostructures. In spite of being a diffraction-limited far-field method with a spatial resoluti…
N-polar GaN channel mobility is important for high frequency device applications. In this Letter, we report the theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2-DEG) in N-polar GaN quantum well channels with high-k dielectrics. The effect of SO phonons on 2-DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with high-k dielectrics is low and limits the total mobility. The SO scattering for SiNx dielectric GaN was found to be negligible due to its high SO phonon energy…
Using density functional theory, we present a comparative study of the electronic properties of BN-doped graphene monolayer, bilayer, trilayer, and multilayer systems. In addition, we address a superlattice of pristine and BN-doped graphene. Five doping concentrations between 12.5% and 75% are considered, for which we obtain band gaps from 0.02 eV to 2.43 eV. We show that the effective mass varies between 0.007 and 0.209 free electron masses, resembling a high mobility of the charge carriers.
In-plane magnetic field photoluminescence spectra from a series of GaAs/AlGaAs coupled double quantum wells show distinctive doublet structures related to the symmetric and antisymmetric states. The magnetic field behavior of the upper transition from the antisymmetric state strongly depends on sample mobility. In lower mobility samples, the transition energy shows an $\cal N$-type kink with fields (namely a maximum followed by a minimum), whereas higher mobility samples have a linear dependence. The former is due to a homogeneous broadening of electron and hole states and the results are in g…
We fabricate and characterize dual-gated graphene field-effect transistors (FETs) using Al2O3 as top-gate dielectric. We use a thin Al film as a nucleation layer to enable the atomic layer deposition of Al2O3. Our devices show mobility values of over 8,000 cm2/Vs at room temperature, a finding which indicates that the top-gate stack does not significantly increase the carrier scattering, and consequently degrade the device characteristics. We propose a device model to fit the experimental data using a single mobility value.
Considering scattering by unintentional background charged impurities and by charged dopants in the modulation doping layer as well as by GaAs acoustic phonons, we theoretically consider the practical intrinsic (phonons) and extrinsic (background and dopants) limits to carrier mobility in modulation doped AlGaAs-GaAs 2D semiconductor structures. We find that reducing background impurity density to $10^{12}$ cm$^{-3}$ along with a modulation doping separation of 1000 Åor above will achieve a mobility of $100 \times 10^6$ cm$^2$/Vs at a carrier density of $3\times 10^{11}$ cm$^{-2}$ for T=1K. At…
We report on a systematic investigation of the dominant scattering mechanism in shallow two-dimensional electron gases (2DEGs) formed in modulation-doped GaAs/Al_{x}Ga_{1-x}As heterostructures. The power-law exponent of the electron mobility versus density, mu \propto n^{alpha}, is extracted as a function of the 2DEG's depth. When shallower than 130 nm from the surface, the power-law exponent of the 2DEG, as well as the mobility, drops from alpha \simeq 1.65 (130 nm deep) to alpha \simeq 1.3 (60 nm deep). Our results for shallow 2DEGs are consistent with theoretical expectations for scattering…
In this letter, carrier transport in graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N with a polarization-induced n-type doping as low as ~ 10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$ is reported. The graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N is grown by metal organic chemical vapor deposition on a sapphire substrate and a uniform n-type doping without any intentional doping is realized by linearly varying the Al composition from 0% to 20% over a thickness of 600 nm. A compensating center concentration of ~10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$ was also estimated. A peak mobility of 900 cm$\mathrm{^2}$/V$…
Utilizing a novel carbon doping source, we prepared two-dimensional hole gases in a symmetric quantum well structure in the GaAs/AlGaAs heterosystem. Low temperature hole mobilities up to 1.2 x 10^6 cm^2/Vs at a density of 2.3 x 10^11 cm^-2 were achieved on GaAs (001) substrates. In contrast to electron systems, the hole mobility sensitively depends on variations of the quantum well width and the spacer thickness. In particular an increase of the quantum well width from an optimal value of 15 nm to 18 nm is accompanied by a 35 % reduction of the hole mobility. The quality of ultrahigh-mobility…
High performance enhancement mode semiconducting carbon nanotube field-effect transistors (CNTFETs) are obtained by combining ohmic metal-tube contacts, high dielectric constant HfO2 films as gate insulators, and electrostatically doped nanotube segments as source/drain electrodes. The combination of these elements affords high ON currents, subthreshold swings of ~ 70-80 mV/decade, and allows for low OFF currents and suppressed ambipolar conduction. The doped source and drain approach resembles that of MOSFETs and can impart excellent OFF states to nanotube FETs under aggressive vertical scali…
We show that an internal localization mobility edge can appear around the Fermi energy in graphene by introducing impurities in the split-band regimen, or by producing vacancies in the lattice. The edge appears at the center of the spectrum and not at the band edges, in contrast with the usual picture of localization. Such result is explained by showing that the bipartite nature of lattice allows to renormalize the Hamiltonian, and the internal edge appears because of frustration effects in the renormalized lattice. The size in energy of the spectral region with localized states is similar in …
We study the effects of charged impurity scattering on the electronic transport properties of <110>-oriented Si nanowires in a gate-all-around geometry, where the impurity potential is screened by the gate, gate oxide and conduction band electrons. The electronic structure of the doped nanowires is calculated with a tight-binding method and the transport properties with a Landauer-Buttiker Green functions approach and the linearized Boltzmann transport equation (LBTE) in the first Born approximation. Based on our numerical results we argue that: (1) There are large differences between Phosphor…
We discuss the effect of the dielectric environment (insulators and metal gates) on electronic transport in two-dimensional (2D) transition metal dichalcogenides (TMD) monolayers. We employ well-known ab initio methods to calculate the low-field carrier mobility in free-standing layers and use the dielectric continuum approximation to extend our study to layers in double-gate structures, including the effects of dielectric screening of the electron-phonon interaction caused by the bottom oxide and the gate insulator, and of scattering with hybrid interface optical-phonon/plasmon excitations (`…
Two-dimensional (2D) materials are a new class of materials with interesting physical properties and ranging from nanoelectronics to sensing and photonics. In addition to graphene, the most studied 2D material, monolayers of other layered materials such as semiconducting dichalcogenides MoS2 or WSe2 are gaining in importance as promising insulators and channel materials for field-effect transistors (FETs). The presence of a direct band gap in monolayer MoS2 due to quantum mechanical confinement, allows room-temperature field-effect transistors with an on/off ratio exceeding 108. The presence o…
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically remote-doped samples with an HfO_{2} gate dielectric formed by atomic layer deposition, parallel conduction is eliminated and complete 2DEG channel depletion is reached with minimal hysteresis in gate bias response of the 2DEG electron density. The integer quantum Hall effect with Landau level filling factor down to 1 is observed. A high-transparency non-all…
By eliminating normal fabrication processes, we preserve the bulk insulating state of calcium-doped Bi2Se3 single crystals in suspended nanodevices, as indicated by the activated temperature dependence of the resistivity at low temperatures. We perform low-energy electron beam irradiation (<16 keV) and electrostatic gating to control the carrier density and therefore the Fermi level position in the nanodevices. In slightly p-doped Bi2-xCaxSe3 devices, continuous tuning of the Fermi level from the bulk valence band to the band-gap reveals dramatic enhancement (> a factor of 10) in the field-eff…
The influence of illumination on a high mobility two-dimensional electron gas with high concentration of charge carriers is studied in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers at a temperature T = 4.2 K in magnetic fields B < 2 T. It is shown that illumination at low temperatures in the studied heterostructures leads to an increase in the concentration, mobility, and quantum lifetime of electrons. An increase in the quantum lifetime due to illumination of single GaAs quantum wells with modulated superlattice doping is explained by a decrease…
Indium (In) doping in topological crystalline insulator SnTe induces superconductivity, making In-doped SnTe a candidate for a topological superconductor. SnTe nanostructures offer well-defined nanoscale morphology and high surface-to-volume ratios to enhance surface effects. Here, we study In-doped SnTe nanoplates, InxSn1-xTe, with x ranging from 0 to 0.1 and show they superconduct. More importantly, we show that In doping reduces the bulk mobility of InxSn1-xTe such that the surface states are revealed in magnetotransport despite the high bulk carrier density. This is manifested by two-dimen…
The quest for extremely high mobilities of 2d electron gases in MBE-grown heterostructures is hampered by the available purity of the starting materials, particularly of the gallium. Here we compare the role of different Ga lots having nominally the highest possible quality on the mobility and the photoluminescence (PL) of modulation doped single interface structures and find significant differences. A weak exciton PL reveals that the purity of the Ga is insufficient. No high mobility can be reached with such a lot with a reasonable effort. On the other hand, a strong exciton PL indicates a hi…
Ab-initio calculations based on density functional theory (DFT) have been performed to study the optical properties of pure graphene and have been compared to that of individual boron (B), nitrogen (N) and BN co-doped graphene sheet. The effect of doping has been investigated by varying the concentrations of dopants from 3.125 % (one atom of the dopant in 32 host atoms) to 6.25 % (six dopant atoms in 50 host atoms) for individual B and N doping and from 37.5 % (one B/N pair in 32 host atoms) to 18.75 % for BN co-doping. Positions of the dopants have also been varied for the same concentration …
We develop a theory for the maximum achievable mobility in modulation-doped 2D GaAs-AlGaAs semiconductor structures by considering the momentum scattering of the 2D carriers by the remote ionized dopants which must invariably be present in order to create the 2D electron gas at the GaAs-AlGaAs interface. The minimal model, assuming first order Born scattering by random quenched remote dopant ions as the only scattering mechanism, gives a mobility much lower (by a factor of 3 or more) than that observed experimentally in many ultra high-mobility modulation-doped 2D systems, establishing convinc…
We investigated the spin coherence of high-mobility two-dimensional electron gases confined in multilayer GaAs quantum wells. The dynamics of the spin polarization was optically studied using pump-probe techniques: time-resolved Kerr rotation and resonant spin amplification. For double and triple quantum wells doped beyond the metal-to-insulator transition, the spin-orbit interaction was tailored by the sample parameters of structural symmetry (Rashba constant), width and electron density (Dresselhaus linear and cubic constants) which allows us to attain long dephasing times in the nanoseconds…
We report on the detection of the intrinsic spin Hall effect in a modulation doped Al-GaAs/GaAs/AlGaAs heterostructure bounded by a self-aligned pn-junction, fabricated by the cleaved edge overgrowth method. Light emission due to the recombination of electrons and spin-polarized holes was generated and mapped with a spatial resolution of one micrometer. An edge accumulated spin polarization of up to 11% was measured, induced solely by application of an electric Field perpendicular to the pn-junction. Using a quantum dot structure as light source, a linear dependence of the effective spin polar…
We present a study of Andreev Quantum Dots (QDots) fabricated with small-diameter (30 nm) Si-doped InAs nanowires where the Fermi level can be tuned across a mobility edge separating localized states from delocalized states. The transition to the insulating phase is identified by a drop in the amplitude and width of the excited levels and is found to have remarkable consequences on the spectrum of superconducting SubGap Resonances (SGRs). While at deeply localized levels, only quasiparticles co-tunneling is observed, for slightly delocalized levels, Shiba bound states form and a parity changin…
Motivated by a recent experiment reporting on the possible application of graphene as sensors, we calculate transport properties of 2D graphene monolayers in the presence of adsorbed molecules. We find that the adsorbed molecules, acting as compensators that partially neutralize the random charged impurity centers in the substrate, enhance the graphene mobility without much change in the carrier density. We predict that subsequent field-effect measurements should preserve this higher mobility for both electrons and holes, but with a voltage induced electron-hole asymmetry that depends on wheth…
To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various doping techniques and dielectric engineering using $high-κ$ oxides, respectively. The goal of this work is to demonstrate a $high-κ$ dielectric that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide ($MoS_{2}$). Utilizing amorphous titanium suboxide (ATO) as the '$high-κ$ dopant', we achieved a contact…
Graphene with high carrier mobility μ is required both for graphene-based electronic devices and for the investigation of the fundamental properties of graphene's Dirac fermions. It is largely accepted that the mobility-limiting factor in graphene is the Coulomb scattering off of charged impurities that reside either on graphene or in the underlying substrate. This is true both for traditional graphene devices on SiO2 substrates and possibly for the recently reported high-mobility suspended and supported devices. An attractive approach to reduce such scattering is to place graphene in an envir…
We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured. This is the highest mobility reported for a 2DHS to date. Using a back-gated sample geometry, the density dependence of mobility was studied from 2.8 x 10^10 cm^-2 to 1 x 10^11 cm^-2. The mobility vs. density cannot be fit to a power law dependence of the form mu ~ p^alpha using a single exponent alpha. Our data indicate a continuous evolution of the power la…
We investigate the Andreev reflection process in high-mobility HgTe/CdTe quantum wells. We find that Andreev conductance probes the dynamics of massive 2+1 Dirac fermions, and that both specular Andreev reflection and retroreflection can be realized even in presence of a large mismatch between the Fermi wavelengths at the two sides of the normal/superconducting junction.
We study charged impurity scattering and static screening in a top-gated substrate-supported graphene nanostructure. Our model describes how boundary conditions can be incorporated into scattering, sheds light on the dielectric response of these nanostructures, provides insights into the effect of the top gate on impurity scattering, and predicts that the carrier mobility in such graphene heterostructures decreases with increasing top dielectric thickness and higher carrier density. An increase of up to almost 60 percent in carrier mobility in ultrathin top-gated graphene is predicted.
We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties including a metal-insulator transition at a characteristic conductivity close to the quantum conductance e2/h, a high ON/OFF ratio of >107 at 170 K, and large electron and hole mobility of ~200 cm2V-1s-1 at 160 K. Decreasing the temperature to 77 K increases mobility of electrons to ~330 cm2V-1s-1 and that of holes to ~270 cm2V-1s-1. We attribute our abilit…
We report a first-principles based study of mesoscopic quantum transport in chemically doped graphene nanoribbons with a width up to 10 nm. The occurrence of quasibound states related to boron impurities results in mobility gaps as large as 1 eV, driven by strong electron-hole asymmetrical backscattering phenomena. This phenomenon opens new ways to overcome current limitations of graphene-based devices through the fabrication of chemically-doped graphene nanoribbons with sizes within the reach of conventional lithography.
We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality.
The carrier mobility of a graphene double-layer system is evaluated on the basis of the Boltzmann transport theory. In this system, two graphene layers are separated by a dielectric barrier layer. We focus on the cases in which there is carrier imbalance between the two layers. It is found that the mobility can be improved by controlling the carrier density polarization between the two layers if we choose an appropriate dielectric environment.
We demonstrate tunable solid state and flexible graphene field effect devices (FEDs) fabricated using a poly(methylmethacrylate) (PMMA) and lithium fluoride (LiF) composite dielectric. Increasing the concentration of LiF in the composite dielectric reduces the operating gate voltages significantly from 10 V to 1 V required leading to a decrease in resistance. Electron and hole mobility of 350 and 310 cm2/Vs at VD = -5 V are obtained for graphene FEDs with 10 % LiF concentration in the composite. Using composite dielectric also enabled excellent performance on flexible substrates without any si…
The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.
We show that by combining high-k dielectric substrate and high density of charge carriers, Coulomb impurity can be effectively screened, leading to an unprecedented room-temperature mobility of ~150cm2/Vs in monolayer MoS2. The high sample quality enables us to quantitatively extract the mobility components limited by Coulomb impurities, intrinsic and surface optical phonons, and study their scaling with temperature, carrier density and dielectric constant. The excellent agreement between our theoretical analysis and experimental data demonstrates unambiguously that room-temperature phonon-lim…
We investigate theoretically 2D electronic transport in Si:P $δ$-doped layers limited by charged-dopant scattering. Since the carrier density is approximately equal to the dopant impurity density, the density dependent transport shows qualitatively different behavior from that of the well-studied 2D Si-MOSFETs where the carrier density is independent of the impurity density. We find that the density dependent mobility of the Si:P system shows non-monotonic behavior which is exactly opposite of the non-monotonicity observed in Si-MOSFETs --- in the Si:P system the mobility first decreases with …
We calculate the mobility of a two-dimensional electron gas residing at the interface of LaAlO$_{3}$/SrTiO$_{3}$ following a three band Boltzmann approach at low temperature, where carrier-charged impurity scattering process is assumed to be dominant. We explain the anisotropic characteristic of the dielectric function, which is a consequence of elliptical bands close to Fermi surface. The screening effect, which weakens the long-range Coulomb interaction of the electron-impurity is considered within the random phase approximation. Working at carrier densities high enough to neglect the spin-o…
The screening properties and collective excitations (plasmons) in AA-stacked bilayer graphene are studied within the random phase approximation (RPA). Whereas long lived plasmons in single layer graphene and in AB-stacked bilayer graphene can exist only in doped samples, we find that coherent plasmons can disperse in AA-stacked bilayer graphene {\it even in the absence of doping}. Moreover, we show that the characteristic low energy dispersion relation is unaffected by changes in the number of carriers, unless the chemical potential of the doped sample exceeds the inter-layer hopping energy. W…
In our previous paper, we reported on switchable monolayer MoS2 transistors with a high on-off ratio and we claim that dielectric screening can be used to increase the mobility of monolayer MoS2. We estimated its mobility using a method previously applied by Lemme et al. to top-gated graphene nanoribbons. We discuss here the comments raised by M. Fuhrer and J. Hone in their post 1301.4288 and give our own estimates of the possible errors in previous mobility measurements and their origins.
We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating that the sample mobility is not necessarily a reliable or universal indicator of the sample quality in high-mobility modulation-doped 2D GaAs structures because, depending on the specific system property of interest, mobility and quality may be controlled by different aspects of the underlying disorder distribution, particularly since these systems are dominated by long-range Coulomb disorder from both near and far r…
A plasmonic nanostructure conceived with periodic layers of a doped semiconductor and passive semiconductor is shown to generate spontaneously surface plasmon polaritons thanks to its periodic nature. The nanostructure is demonstrated to behave as an effective material modeled by a simple dielectric function of ionic-crystal type, and possesses a fully tunable photonic band gap, with widths exceeding 50%, in the region extending from mid-infra-red to Tera-Hertz.
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3/ Ga2O3 heterojunction using silicon delta doping. The formation of a 2DEG was confirmed using capacitance voltage measurements. A modulation-doped 2DEG channel was used to realize a modulation-doped field-effect transistor. The demonstration of modulation doping in the beta-(Al0.2Ga0.8)2O3/ Ga2O3 material system could enable heterojunction devices f…
Diamond has attracted attention as a next-generation semiconductor because of its various exceptional properties such as a wide bandgap and high breakdown electric field. Diamond field effect transistors, for example, have been extensively investigated for high-power and high-frequency electronic applications. The quality of their charge transport (i.e., mobility), however, has been limited due to charged impurities near the diamond surface. Here, we fabricate diamond field effect transistors by using a monocrystalline hexagonal boron nitride as a gate dielectric. The resulting high mobility o…
The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the difference from bulk Ge crystals. Here we discuss the procedure we have employed to extract the real and imaginary part of the dielectric constants from normal incidence reflectance measurements, by combini…
We present the results of Monte-Carlo simulations of the charge carrier transport in a disordered molecular system containing spatial and energetic disorders using the dipolar glass model. Model parameters of the material were chosen to fit a typical polar organic photoconductor polycarbonate doped with 30% of aromatic hydrazone, whose transport properties are well documented in literature. Simulated carrier mobility demonstrates a usual Poole-Frenkel field dependence and its slope is very close to the experimental value without using any adjustable parameter. At room temperature transients ar…
