氧离子注入高迁移率二维电子系统的结构化背栅
Structured Back Gates for High-Mobility Two-Dimensional Electron Systems Using Oxygen Ion Implantation
摘要：
我们提出了一种新的背栅图案化的方法，是最高迁移率的分子束外延的要求兼容。与常见的背栅技术相反，我们的方法简单、可靠，并且可以扩大到整个晶片。背栅结构是由局部氧注入到硅掺杂GaAs外延层，这抑制了电导，而不影响表面质量。
英文摘要：
We present a new approach of back gate patterning that is compatible with the requirements of highest mobility molecular beam epitaxy. Contrary to common back gating techniques, our method is simple, reliable and can be scaled up for entire wafers. The back gate structures are defined by local oxygen implantation into a silicon doped GaAs epilayer, which suppresses the conductance without affecting the surface quality.
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