脉冲laser沉积BN薄膜及其器件性能
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
摘要：
宽带隙和超宽带隙半导体是下一代高功率、高频电子产品的核心。本文报道了用脉冲激光沉积法在宽带隙氮化镓（GAN）上生长超宽带隙氮化硼（BN）薄膜。综合的光谱（芯能级和价带XPS、FTIR、Raman）和微观（AFM和STEM）表征证实了BN薄膜在GAN上的生长。在光学上，我们观察到BN/GAN异质结构具有二次谐波产生活性。此外，我们制作的BN/GAN异质结的肖特基二极管，表现出整流特性，较低的导通电压，并提高击穿能力（234 V）相比，GAN（168 V），由于更高的击穿电场BN。我们的方法是弥合宽带隙和超宽带隙材料之间的差距的早期步骤，用于潜在的光电子学以及下一代高功率电子学。
英文摘要：
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.
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