Transport characteristics of type II Weyl semimetal MoTe2 thin films grown by chemical vapor deposition
Niraj Bhattarai, Andrew W. Forbes, Rajendra P. Dulal, Ian L. Pegg, John Philip
备注：
11 Pages, 7 Figures, This is published in Journal of Materials Research as a first view article. Volume, issue number are not yet assigned. That will be provided once those are available
发表信息：
Journal of Materials Research, volume 35, Issue 5, pages 454-461, year 2020, Publisher: Cambridge University Press
Theoretical calculations and experimental observations show MoTe2 is a type II Weyl semimetal, along with many members of transition metal dichalcogenides family. We have grown highly crystalline large-area MoTe2 thin films on Si/SiO2 substrates by chemical vapor deposition. Very uniform, continuous, and smooth films were obtained as confirmed by scanning electron microscopy and atomic force microscopy analyses. Measurements of the temperature dependence of longitudinal resistivity and current-voltage characteristics at different temperature are discussed. Unsaturated, positive quadratic magnetoresistance of the as-grown thin films has been observed from 10 K to 200 K. Hall resistivity measurements confirm the majority charge carriers are hole.
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Spot Profile Analysis Low Energy Electron Diffraction of Plasma-Enhanced Chemical Vapor Deposition Grown Epitaxial Few-Layer Graphene on Sapphire
University of Duisburg-Essen（杜伊斯堡-埃森大学）；Faculty of Engineering, University of Duisburg-Essen（杜伊斯堡-埃森大学工程学院）；Department of Chemistry and Waterloo Institute for Nanotechnology（化学系与滑铁卢纳米技术研究所）；Center for Nanointegration (CENIDE)（纳米集成中心）
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