WS2原子层的生长-刻蚀金属有机化学气相沉积法
Growth-Etch Metal-Organic Chemical Vapor Deposition Approach of WS2 Atomic-Layers
摘要：
金属有机化学气相沉积（MOCVD）是当今半导体工业中用于薄膜制造的主要方法之一，并且被认为是实现大规模和高质量的2D过渡金属二硫属化物（TMDC）的最有前途的路线之一。但是，如果不采取特殊的措施，MOCVD存在一些严重的缺陷，如畴尺寸小和碳污染，导致光学和晶体质量差，这可能会抑制其大规模制备原子级薄半导体的实现。在这里，我们提出了一种生长蚀刻MOCVD（GE-MOCVD）的方法，其中在生长过程中引入了少量的水蒸气，而前体的脉冲输送。描述了作为水蒸气量、循环次数和类型以及气体组成的函数的生长的演变。我们表明，相对于我们的传统工艺，实现了显着的域尺寸增加。通过拉曼光谱、光致发光（PL）光谱和高分辨透射电子显微镜（HRTEM）研究证明了WS 2（和WSe 2）畴的晶体质量的改善。此外，时间分辨的PL研究表明，激子的寿命很长，与机械剥离的薄片中观察到的。因此，这里提出的GE-MOCVD方法可以促进它们集成到广泛的应用中。
英文摘要：
Metal organic chemical vapor deposition (MOCVD) is one of the main methodologies used for thin film fabrication in the semiconductor industry today and is considered one of the most promising routes to achieve large-scale and high-quality 2D transition metal dichalcogenides (TMDCs). However, if not taken special measures, MOCVD suffers from some serious drawbacks, such as small domain size and carbon contamination, resulting in poor optical and crystal quality, which may inhibit its implementation for the large-scale fabrication of atomic-thin semiconductors. Here we present a Growth-Etch MOCVD (GE-MOCVD) methodology, in which a small amount of water vapor is introduced during the growth, while the precursors are delivered in pulses. The evolution of the growth as a function of the amount of water vapor, the number and type of cycles and the gas composition is described. We show a significant domain size increase is achieved relative to our conventional process. The improved crystal quality of WS2 (and WSe2) domains was demonstrated by means of Raman spectroscopy, photoluminescence (PL) spectroscopy and HRTEM studies. Moreover, time-resolved PL studies show very long exciton lifetimes, comparable to those observed in mechanically exfoliated flakes. Thus, the GE-MOCVD approach presented here may facilitate their integration into a wide range of applications.
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