Si衬底上高反射率III族氮化物分布布拉格反射器的金属有机化学气相沉积
Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates
摘要：
采用MOCVD方法在Si（111）衬底上制备了高反射率的III族氮化物分布布拉格反射器（DBR）。AlN/GAN DBR的阻带中心在可见光谱的蓝绿色范围内，首次证明了大于96%的反射率。在DBR结构上生长无裂纹GAN盖层，以证明在这种材料中构建III族氮化物光电子器件的机会。DBR结构由于在失配衬底上生长而处于显著的应变下，尽管GAN盖层被示出为无应变。
英文摘要：
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green range of the visible spectrum. Crack-free GaN cap layers were grown on the DBR structures to demonstrate the opportunity to build III-nitride optoelectronic devices in this material. The DBR structure was under significant strain due to growth on a mismatched substrate although the GaN cap layer was shown to be strain free.
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