Si衬底上生长的高反射率III族氮化物分布布拉格反射器
High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
摘要：
在Si（111）衬底上生长了AlN/AlGaN超晶格分布布拉格反射器（DBR）。通过在Si衬底上直接生长DBR来实现Si上的第一高反射率III族氮化物DBR，以由于Si/AlN界面处的高折射率对比度而增强整体反射率。对于9 x DBR，96.8%的实测峰值反射率实际上超过了96.1%的理论值。AlN/AlGaN超晶格起到了补偿无裂纹500 nm GAN /7 x DBR / Si结构生长期间产生的大拉伸应变的额外目的。这一成就为在不透明Si衬底中制造无光吸收的高质量III族氮化物光电子器件提供了可能性。
英文摘要：
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflectance due to the high index of refraction contrast at the Si/AlN interface. For a 9x DBR, the measured peak reflectance of 96.8% actually exceeded the theoretical value of 96.1%. The AlN/AlGaN superlattice served the added purpose of compensating the large tensile strain developed during the growth of a crack-free 500 nm GaN / 7x DBR / Si structure. This achievement opens the possibility to manufacture high-quality III-nitride optoelectronic devices without optical absorption in the opaque Si substrate.
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