laser脉冲沉积等离子体外延生长FeSe薄膜的几何和能量标度
Geometrical and energy scaling in the pulsed laser deposition plasma during epitaxial growth of FeSe thin films
摘要：
脉冲激光沉积（PLD）是一种用于生长各种新型材料组合的外延异质结构的通用技术。通过PLD实现具有原子级尖锐界面的低缺陷层需要仔细管理晶体生长条件。控制沉积颗粒的流量、它们的动能和衬底温度通常足以在真空中获得高质量的单晶外延。在这篇文章中，我们表明，等离子体参数，如电子温度，电子密度，和等离子体流体膨胀的马赫数的测量可以提供额外的见解到PLD的晶体生长和加工环境的调整。本文报道了在（100）取向SrTiO $_3$上生长FeSe薄膜的朗缪尔探针测量结果。我们讨论了两个不同的等离子体制度，可访问的KrF激光烧蚀FeSe时，脉冲能量在20-630毫焦范围内使用。这两种机制的特征在于在激光等离子体相互作用体积的吸收中心的光子的相对数量。薄膜生长的条件下产生的这两个不同的等离子体制度进行了分析，通过X射线衍射和X射线反射率和它们的外延配置相关的PLD条件与这些等离子体。
英文摘要：
Pulsed laser deposition (PLD) is a versatile technique for growing epitaxial heterostructures of a wide variety of novel materials combinations. Achieving low-defect layers with atomically sharp interfaces by PLD requires careful management of crystal growth conditions. Control over the flux of depositing particles, their kinetic energy, and the substrate temperature, is generally sufficient to obtain high-quality single crystal epitaxy in vacuum. In this article, we show that measurements of plasma parameters such as the electron temperature, the electron density, and the Mach number of the plasma fluid expansion may provide additional insights into the tuning of the crystal growth and processing environment of PLD. We report Langmuir probe measurements during growth of FeSe thin films on (100)-oriented SrTiO$_3$. We discuss two distinct plasma regimes that are accessible by KrF laser ablation of FeSe when pulse energies in the 20-630 mJ range are used. The two regimes can be characterized by the relative number of photons to absorbing centers in the laser-plasma interaction volume. Thin films grown under the conditions created by these two distinct plasma regimes are analyzed by x-ray diffraction and x-ray reflectivity and their epitaxial configurations correlated to the PLD conditions associated with these plasmas.
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