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北美退伍军人节(Veterans Day),12 日无更新
arXiv 2207.07501cond-mat.mtrl-sci
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MA $_2$ Z $_4$(M = Mo,W,Ti; A= Si,Ge; Z = N,P,As)中的准粒子能带排列和与堆垛无关的激子

Quasiparticle band alignment and stacking-independent exciton in MA$_2$Z$_4$ (M = Mo, W, Ti; A= Si, Ge; Z = N, P, As)

Hongxia Zhong, Guangyong Zhang, Cheng Lu, Shiyuan Gao

摘要:

受最近合成的二维半导体MoSi $_2$ N $_4$的启发,我们利用从头算GW和Bethe-Salpeter方程计算系统地研究了单层MA $_2$ Z $_4$(M = Mo,W,Ti; A= Si,Ge; Z = N,P,As)中的准粒子能带排列和激子.与密度泛函理论(DFT)的计算结果相比,我们的GW计算揭示了更显著的带隙和不同的准粒子绝对能量,但预测了相同类型的能带排列。

英文摘要:

Motivated by the recently synthesized two-dimensional semiconducting MoSi$_2$N$_4$, we systematically investigate the quasiparticle band alignment and exciton in monolayer MA$_2$Z$_4$ (M = Mo, W, Ti; A= Si, Ge; Z = N, P, As) using ab initio GW and Bethe-Salpeter equation calculations. Compared with the results from density functional theory (DFT), our GW calculations reveal substantially more significant band gaps and different absolute quasiparticle energy but predict the same types of band alignments.

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