Main text: 5 pages, 4 figures, 3 tables. Supplemental Material: 2 pages, 1 figure. Submitted; Ver2: Discussion has been extended and Title has been changed upon publication
We find that the motion of the valley electrons -- electronic states close to the ${\rm K}$ and ${\rm K'}$ points of the Brillouin zone -- is confined into two dimension when the layers of MoS$_{2}$ follow the 3R stacking, while in the 2H polytype the bands have dispersion in all the three dimensions. According to our first-principles band structure calculations, the valley states have no interlayer hopping in 3R-MoS$_{2}$, which is proved to be the consequence of the rotational symmetry of the Bloch functions. By measuring the reflectivity spectra and analyzing an anisotropic hydrogen atomic model, we confirm that the valley excitons in 3R-MoS$_{2}$ have two-dimensional hydrogen-like spectral series, and the spreads of the wave function are smaller than the interlayer distance. In contrast, the valley excitons in 2H-MoS$_{2}$ are well described by the three-dimensional model and thus not confined in a single layer. Our results indicate that the dimensionality of the valley degree of freedom can be controlled simply by the stacking geometry, which can be utilized in future valleytronics.
Spin-valley locking in the band structure of monolayers of MoS$_2$ and other group-VI dichalcogenides has attracted enormous interest, since it offers potential for valleytronic and optoelectronic applications. Such an exotic electronic state has sparsely been seen in bulk materials. Here, we report spin-valley locking in a bulk Dirac semimetal BaMnSb$_2$. We find valley and spin are inherently coupled for both valence and conduction bands in this material. This is revealed by comprehensive studies using first principle calculations, tight-binding and effective model analyses, angle-resolved p…
Ferrovalley materials with spontaneous valley polarization are crucial to valleytronic application. Based on first-principles calculations, we demonstrate that two-dimensional (2D) YX$_2$(X= I, Br,and Cl) in 2H structure constitute a series of promising ferrovalley semiconductors with large spontaneous valley polarization and high Curie temperature. Our calculations reveal that YX$_2$ are dynamically and thermally stable 2D ferromagnetic semiconductors with a Curie temperature above 200 K. Due to the natural noncentrosymmetric structure, intrinsic ferromagnetic order and strong spin orbital co…
Interplay of Valley, Orbital, Spin, and Layer Degrees of Freedom in Ta$_2$CS$_2$ MXene
Indian Association for the Cultivation of Science（印度科学文化协会）；Indian Institute of Technology Bombay（孟买印度理工学院）；Indian Institute of Technology Guwahati（古瓦哈提印度理工学院）
For a long time, two-dimensional (2D) hexagonal MoS2 was proposed as a promising material for valleytronic system. However, the limited size of growth and low carrier motilities in MoS2 restrict its further application. Very recently, a new kind of hexagonal 2D MXene, MoSi2N4, was successfully synthesized with large size, excellent ambient stability, and considerable hole mobility. In this paper, based on the first-principles calculations, we predict that the valley-contrast properties can be realized in monolayer MoSi2N4 and its derivative MoSi2As4. Beyond the traditional two-level valleys, t…
In a recent work, new two-dimensional materials, the monolayer MoSi$_{2}$N$_{4}$ and WSi$_{2}$N$_{4}$, have been successfully synthesized in experiment, and several other monolayer materials with the similar structure, such as MoSi$_{2}$As$_{4}$, have been predicted [{\color{blue}Science 369, 670-674 (2020)}]. Here, based on first-principles calculations and theoretical analysis, we investigate the electronic and optical properties of monolayer MoSi$_{2}$N$_{4}$, WSi$_{2}$N$_{4}$ and MoSi$_{2}$As$_{4}$. We show that these materials are semiconductors, with a pair of Dirac-type valleys located …
Using temperature dependent photoluminescence (PL), polarization resolved PL and Raman spectroscopy, we investigate the effect of in situ vacuum annealing as well as the relaxation of strain on the luminescence and the valley polarization properties of large area strictly monolayer (1L)-MoS$_2$, grown on sapphire and SiO$_2$/Si substrates by a microcavity based chemical vapor deposition (CVD) technique. The study shows that the strain as well as the physisorption of air molecules at the sulfur vacancy ($V_S$) sites play key roles in governing the optical quality of CVD grown 1L-MoS$_2$. Remova…
Exciton valley depolarization in monolayer MoS2: non-Markovian quantum dynamics, intervalley scattering, and the breakdown of the Dyakonov-Perel mechanism
Institute of Atomic and Molecular Sciences, Academia Sinica（中央研究院原子与分子科学研究所）；Department of Materials Science and Engineering, Stanford University（斯坦福大学材料科学与工程系）；Department of Physics, University of Texas at Austin（德克萨斯大学奥斯汀分校物理系）；Department of Materials Science, Yale University（耶鲁大学材料科学系）
Interlayer valley excitons in bilayer MoS2 feature concurrently large oscillator strength and long lifetime, and hence represent an advantageous scenario for valleytronic applications. However, control of valley pseudospin of interlayer excitons in pristine bilayer MoS2, which lies at the heart of valleytronics, has remained elusive. Here we report the observation of highly circularly polarized photoluminescence from interlayer excitons of bilayer MoS2 with both optical and magnetic addressability. Under excitation of circularly polarized light near exciton resonance, interlayer excitons of bi…
We have investigated the steady-sate valley polarization and valley coherence of encapsulated MoS2 monolayer as a function of the temperature and the power density with a continuous wave laser excitation. Both valley polarization and coherence exhibit a non-monotonic dependence on sample temperature, attaining a local maximum at T=40 K. This has been recently attributed to a motional narrowing effect: an enhancement of the valley relaxation time occurs when the scattering rate increases. At a fixed temperature of T=6 K, a two-fold increase of the steady-state valley polarization is achieved by…
The valley degree of freedom of electrons in materials promises routes toward energy-efficient information storage with enticing prospects towards quantum information processing. Current challenges in utilizing valley polarization are symmetry conditions that require monolayer structures or specific material engineering, non-resonant optical control to avoid energy dissipation, and the ability to switch valley polarization at optical speed. We demonstrate all-optical and non-resonant control over valley polarization using bulk MoS$_2$, a centrosymmetric material with zero Berry curvature at th…
We investigate with polarized microphotoluminescence the optical pumping of the valley degree of freedom in charge-tunable MoS2 monolayers encapsulated with hexagonal boron nitride at cryogenic temperatures. We report a large steady state valley polarization of the different excitonic complexes following circularly-polarized laser excitation 25 meV above the neutral exciton transition. For the first time in this material we reveal efficient valley pumping of positively-charged trions, which were so far elusive in non-encapsulated monolayers due to defect and laser-induced large electron doping…
While valleys (energy extrema) are present in all band structures of solids, their preeminent role in determining exciton resonances and dynamics in atomically thin transition metal dichalcogenides (TMDC) is unique. Using two-dimensional coherent electronic spectroscopy, we find that exciton decoherence occurs on a much faster time scale in MoSe$_2$ bilayers than that in the monolayers. We further identify two population relaxation channels in the bilayer, a coherent and an incoherent one. Our microscopic model reveals that phonon-emission processes facilitate scattering events from the $K$ va…
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE without the plasmonic structure's assistance has only been reported in cryogenic temperature, limiting its practical application. Here, we report the observation of VHE at room temperature in the MoS2/WSe2 heterostructures. We also uncover that both the magnitude and the polarity of the VHE in the 2D heterostructure is gate tunable. We attribute this to the opposi…
Spin and Valley dependent analysis of the two-dimensional low-density electron system in Si-MOSFETS
硅金属氧化物场效应晶体管（MOSFET）中的二维电子系统（2DES）由两种不同的电子流体相互作用组成。我们计算的总能量作为密度的函数$n$，和自旋极化$ζ$在强相关的低密度制度，使用一个经典的映射到一个超网链（CHNC）方程包括桥项。在这里，十个分布函数，所产生的自旋和谷指数，自洽计算，以获得总自由能，化学势，压缩性和自旋磁化率。将T=0的结果与Conti等人的2谷量子蒙特卡罗（QMC）数据（T=0时，$ζ=0$）进行了比较，发现两者非常吻合。然而，与单谷2DES不同，它表明{ \it非偏振相总是2谷系统中的稳定相}，直到在$r_s=42$处的维格纳结晶。这导致$g^*$对自旋极化和密度不敏感。从自由能计算的压缩性和自旋磁化率增强证实了一个简单的方法的有效性的耦合模式形成的基础上的两个谷响应。这三种方法，QMC，CHNC和耦合模理论是一致的。我们的结果不包含{ \it ad hoc}拟合参数。他们同意实验，并没有援引杂质效应或金属-绝缘体过渡现象。
Heterobilayers consisting of MoSe$_2$ and WSe$_2$ monolayers can host optically bright interlayer excitons with intriguing properties such as ultralong lifetimes and pronounced circular polarization of their photoluminescence due to valley polarization, which can be induced by circularly polarized excitation or applied magnetic fields. Here, we report on the observation of an intrinsic valley-magnetophonon resonance for localized interlayer excitons promoted by invervalley hole scattering. It leads to a resonant increase of the photoluminescence polarization degree at the same field of 24.2 Te…
We report magneto-optical spectroscopy of gated monolayer MoS$_2$ in high magnetic fields up to 28T and obtain new insights on the many-body interaction of neutral and charged excitons with the resident charges of distinct spin and valley texture. For neutral excitons at low electron doping, we observe a nonlinear valley Zeeman shift due to dipolar spin-interactions that depends sensitively on the local carrier concentration. As the Fermi energy increases to dominate over the other relevant energy scales in the system, the magneto-optical response depends on the occupation of the fully spin-po…
The moire potential, induced by stacking two monolayer semiconductors with slightly different lattice mismatches, acts as periodic quantum confinement for optically generated excitons, resulting in spatially ordered zero-dimensional quantum systems. However, there are limitations to exploring intrinsic optical properties of moire excitons due to ensemble averaged and broadened emissions from many peaks caused by the inhomogeneity of the moire potential. In this study, we proposed a microfabrication technique based on focused Ga+ ion beams, which enables us to control the number of peaks origin…
