In this paper, we report the measurements of specific heat of an amorphous $Ti_{9.5}Si_{90.5}$ alloy located very close to the critical point of the metal-insulator transition. In the presence of a magnetic field, the specific heat is dominated by the Schottky anomaly caused by magnetic moments associated with the dangling bonds in the matrix of amorphous Si. Subtraction of this contribution exposes the behavior of the electronic specific heat coefficient $γ$. The coefficient is temperature-independent above 2 K and is, in order of magnitude, close to the value expected in the absence of electron-electron interactions. In the temperature range 0.4-1.5 K, the coefficient $γ$ shows an anomalous downturn, which can be approximated by the dependence $γ\left(T\right)=γ_0ln{(T/T_0)}$, with $T_0\approx0.2$ K . In a companion paper, we found that the Hall coefficient in Ti-Si alloys is affected by the electron-electron interaction up to much higher temperature of 150 K and also varies critically across the metal-insulator transition. We compare our results with theoretical predictions for three models, which can potentially explain the anomalous behavior of the specific heat: generalized non-linear $σ$ model, Coulomb glass, and many-body localization.
Hall coefficient in amorphous alloys: critical behavior and quantitative test of quantum corrections due to weak localization and electron-electron interactions
Constructing material network representations for intelligent amorphous alloys design
Songshan Lake Materials Laboratory, Dongguan, China（松山湖材料实验室，东莞，中国）；Lawrence Berkeley National Laboratory, Berkeley CA 94720, USA（劳伦斯伯克利国家实验室，伯克利 CA 94720，美国）；Institute of Physics, Chinese Academy of Sciences, Beijing, China（物理研究所，中国科学院，北京，中国）
Mode Localization and Suppressed Heat Transport in Amorphous Alloys
玻璃通常代表固体热导率的下限，但对非晶材料中晶格热传输的基本理解可以提供超越这种限制的设计规则。在这里，我们调查的质量无序在玻璃中的作用，通过研究非晶硅锗合金（a-Si $_{1-x}$ Ge $_x$）在整个范围内的原子浓度从$x=0$到$x=1$，使用分子动力学和准谐波Green-Kubo晶格动力学形式主义。我们发现，a-Si $_{1-x}$ Ge $_x$的热导率作为$x$的函数表现出比在晶体质量无序合金中更平滑的U形。在低Ge浓度下，对热导率初始下降的主要贡献源于其他扩展模式的局部化，这些模式构成了频率最低的8%的群体。从中频模式的贡献逐渐减少，随着Ge的增加，以达到一个广泛的最小热导率之间的Ge浓度从$x=0.25$到$0.75$。
Aharanov-Bohm oscillations and perfectly transmitted mode in amorphous topological insulator nanowires
KTH Royal Institute of Technology（皇家理工学院）；Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel（格勒诺布尔阿尔卑斯大学、法国国家科学研究中心、格勒诺布尔理工学院、内埃尔研究所）；Donostia International Physics Center (DIPC)（圣塞巴斯蒂安国际物理中心）；IKERBASQUE, Basque Foundation for Science（伊克尔巴斯克，巴斯克科学基金会）
Possible origin of $β$-relaxation in amorphous metal alloys from atomic-mass differences of the constituents
我们采用原子尺度的非仿射晶格动力学的框架内的理论，揭示了金属玻璃（MG）的Johari-Goldstein（JG）$β$ -弛豫的起源。结合模拟和实验数据与我们的理论方法，我们揭示了大的质量不对称的元素之间的La $_{60}$ Ni $_{15}$ Al $_{25}$ MG导致一个明确的分离，在各自的弛豫时间尺度，给出了强有力的证据，JG弛豫控制的最轻的原子物种存在。此外，我们表明，只有定性特征的振动态密度确定的整体观察到的玻璃的机械响应，铺平了道路，一个可能的统一理论的二次弛豫玻璃。
Pressure-induced s,p-d electron redistribution accompanies structural transformation in amorphous Zr-Cu alloy under compression
Warsaw University of Technology（华沙理工大学）；Cranfield University（克兰菲尔德大学）；The University of Bristol（布里斯托大学）；Diamond Light Source（钻石光源）；University of Edinburgh（爱丁堡大学）；Ehime University（爱媛大学）
Determination of the Interface between Amorphous Insulator and Crystalline 4H-SiC in Transmission Electron Microscope Image by using Convolutional Neural Network
Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST)（先进电力电子研究中心，产业技术综合研究所（AIST））；Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST)（全球零排放研究中心，产业技术综合研究所（AIST））
Local insulator-to-superconductor transition in amorphous InO$_x$ films modulated by e-beam irradiation
QMatterPhotonics, Departamento de Fı́sica de Particulas, Universidade de Santiago de Compostela（圣地亚哥-德孔波斯特拉大学量子物质光子学粒子物理系）；iMATUS, Universidade de Santiago de Compostela（圣地亚哥-德孔波斯特拉大学 iMATUS 研究中心）
