基于单级和多级单元RRAM的存内计算的实验演示，最多可实现16个并行操作
Experimental demonstration of Single-Level and Multi-Level-Cell RRAM-based In-Memory Computing with up to 16 parallel operations
摘要：
电阻式存储器（RRAM）的纵横阵列有望实现存内计算（IMC），但由于器件缺陷和器件耐久性的影响而带来的基本挑战尚未被克服。在这项工作中，我们通过实验证明了一个基于RRAM的IMC逻辑概念，即使在一百万个耐久性周期后，也能对RRAM的变化具有很强的弹性。我们的工作依赖于概括的概念，在内存中侦察逻辑，我们证明了它的实验多达16个并行设备（操作数），一个新的里程碑RRAM在内存中的逻辑。此外，我们结合内模与多级单元编程，并在实验上证明，第一次，一个IMC的MRAM为基础的MLC 2位加法器。
英文摘要：
Crossbar arrays of resistive memories (RRAM) hold the promise of enabling In-Memory Computing (IMC), but essential challenges due to the impact of device imperfection and device endurance have yet to be overcome. In this work, we demonstrate experimentally an RRAM-based IMC logic concept with strong resilience to RRAM variability, even after one million endurance cycles. Our work relies on a generalization of the concept of in-memory Scouting Logic, and we demonstrate it experimentally with up to 16 parallel devices (operands), a new milestone for RRAM in-memory logic. Moreover, we combine IMC with Multi-Level-Cell programming and demonstrate experimentally, for the first time, an IMC RRAM-based MLC 2-bit adder.
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