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arXiv 2202.01394cond-mat.mtrl-scicond-mat.mes-hall
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外电场作用下双层CrI $_3$的磁畴壁动力学

Magnetic domain wall dynamics under external electric field in bilayer CrI$_3$

Sahar Izadi Vishkay, Reza Asgari

摘要:

出于操纵双层CrI $_3$的磁序,我们进行微观计算,以找到系统的磁序和各种磁畴中存在的电场。利用密度泛函模拟,自旋模型哈密顿量的介绍,包括各向同性交换耦合,Dzyaloshinskiii-Moriya(DM)的相互作用,和现场磁各向异性。通过求解Landau-Lifshitz-Gilbert方程,得到了双层CrI $_3$的低温(LT)相和高温(HT)相的自旋动力学.结果表明,双层CrI $_3$中的磁性织构依赖于叠层结构,HT叠层中可以出现稳定的磁畴,并且这种磁畴可以通过外加电场和磁场进行调节.因此,我们认为,HT相代表了一个有前途的候选人的数据存储在现代一代的自旋电子器件工作的磁畴工程。

英文摘要:

Motivated by manipulating the magnetic order of bilayer CrI$_3$, we carry out microscopic calculations to find the magnetic order and various magnetic domains of the system in the presence of an electric field. Making use of density functional simulations, a spin model Hamiltonian is introduced consisting of isotropic exchange couplings, Dzyaloshinskii-Moriya (DM) interaction, and on-site magnetic anisotropy. The spin dynamics of two well-known states of bilayer CrI$_3$, low temperature (LT) and high temperature (HT) phases, are obtained by solving the Landau-Lifshitz-Gilbert equation. We show that the magnetic texture is stacking-dependent in bilayer CrI$_3$ and stable magnetic domains can appear in the HT stack which are tunable by external electric and magnetic fields. Therefore, we suggest that the HT phase represents a promising candidate for data storage in the modern generation of spintronic devices working on magnetic domain engineering.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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