Voltage Dependent Symmetry Breaking Effects in the Spin Excitation Spectrum of Spin-$\frac{1}{2}$ Paramagnetic Molecular Junctions Driven Out of Equilibrium
Maria Fernanda Bustos Velasquez, Juan Camilo Velez Quinones, Karem Cecilia Rodriguez Ramirez, Juan David Vasquez Jaramillo
In the present work, we consider a spin 1/2 paramagnetic dimer embedded in a magnetic tunnel junction driven out of equilibrium by means of an applied voltage and an applied temperature gradient, in the presence of an external magnetic bias, which can be turn on/off. Here, we derive the spin excitation spectrum for a two spin 1/2 system analytically and show that an external magnetic field is required to lift the degeneracy in the triplet state, whether both spin units experience the magnetic field in the same direction or in opposite staggered directions. We show that an applied bias voltage in the absence of a magnetic field, transfers the magnetization from the magnetic leads into the spin units embedded in the molecule, hence breaking a symmetry and lifting the triplet degeneracy in the absence of external magnetization. From this theoretical demonstration, we then propose two schemes of magnetic driving to lift spin degeneracy in the spin excitation spectrum, which we named PMD (Parallel Magnetic Driving) and AMD (Anti-Parallel Magnetic Driving). We argue that a symmetry breaking is then required to project the spin configuration of a dimer into quantum transport measurements, and hence propose different schemes to detect the spin triplet state and the spin singlet state using differential conductivity measurements in the non-degenerate non-symmetric configuration of the spin dimer, and compare our results with the ones reported in the literature.
It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we consider current-voltage characteristics of such junctions. By taking into account the contact resistance, we demonstrate a current stabilization effect: by increasing the applied voltage the current density through the junction saturates at a specific value. The transient behavior of the current density is also investigated.
Shot noise in a voltage source changes the character of the quantum (dissipative) phase transition in an ultrasmall Josephson junction: The superconductor-insulator transition transforms into the superconductor-metal transition. In the metallic phase the IV curve probes the voltage distribution generated by shot noise, whereas in the superconducting phase it probes the counting statistics of electrons traversing the noise junction.
We investigate critical current noise in short ballistic graphene Josephson junctions in the open-circuit gate-voltage limit within the McWorther model. We find flicker noise in a wide frequency range and discuss the temperature dependence of the noise amplitude as a function of the doping level. At the charge neutrality point we find a singular temperature dependence $T^{-3}$, strikingly different from the linear dependence expected for short ballistic graphene Josephson junctions under fixed gate voltage.
This paper reports our Monte Carlo (MC) studies aiming to explain the experimentally observed paramagnetic molecule induced antiferromagnetic coupling between the ferromagnetic (FM) electrodes. Recently developed magnetic tunnel junction based molecular spintronics devices (MTJMSDs), which were prepared by chemically bonding the paramagnetic molecules between the FM electrodes along the exposed side edges of magnetic tunnel junctions, exhibited molecule induced strong antiferromagnetic coupling. Our MC studies focused on the atomic model analogous to the MTJMSD and studied the effect of molecu…
We show that elastic currents that take into account variations of the tunnel transmitivity with voltage and a large ratio of majority to minority spin densities of states of the $s$ band, can account for the low voltage current anomalies observed in magnet-oxide-magnet junctions. The anomalies can be positive, negative or have a mixed form, depending of the position of the Fermi level in the $s$ band, in agreement with observations. Magnon contribution is negligible small to account for the sharp drop of the magnetoresistance with the voltage bias.
We investigate theoretically the V-I characteristics and voltage noise of superconducting tunnel junctions with small critical current via the matrix-continued-fraction method. Special attention is paid to the large hysteresis in the V-I characteristics and to the voltage-noise anomaly observed in preliminary experiments. The current dependence of the voltage noise shows a strong asymmetry between the forward and backward current ramping and a discontinuous change of the noise close to its measured maximum occurring at the switching current. We show that both the large hysteresis and the volta…
We express the low-frequency shot noise in a disordered normal-metal - superconductor (NS) junction at finite (subgap) voltage in terms of the normal scattering amplitudes and the Andreev reflection amplitude. In the multichannel limit, the conductance exhibits resonances which are accompanied by an enhancement of the (differential) shot noise. In the study of multichannel single and double barrier junctions we discuss the noise properties of coherent transport at low versus high voltage with respect to the Andreev level spacing.
We present the first measurements of the third moment of the voltage fluctuations in a conductor. This technique can provide new and complementary information on the electronic transport in conducting systems. The measurement was performed on non-superconducting tunnel junctions as a function of voltage bias, for various temperatures and bandwidths up to 1GHz. The data demonstrate the significant effect of the electromagnetic environment of the sample.
Transition voltage spectroscopy (TVS) has recently been introduced as a spectroscopic tool for molecular junctions where it offers the possibility to probe molecular level energies at relatively low bias voltages. In this work we perform extensive ab-initio calculations of the non-linear current voltage relations for a broad class of single-molecule transport junctions in order to assess the applicability and limitations of TVS. We find, that in order to fully utilize TVS as a quantitative spectroscopic tool, it is important to consider asymmetries in the coupling of the molecule to the two el…
We have used the method of generating functional in imaginary time to derive the current-voltage characteristics of a tunnel junction with arbitrary tunneling conductance, connected in series with an external impedance and a voltage source. We have shown that via the renormalized charging energy and the renormalized environment conductance, our nonperturbative expressions of the total action can be mapped onto the corresponding perturbative formulas. This provides a straightforward way to go beyond the perturbation theory. For the impedance being a pure resistance, we have calculated the condu…
We theoretically investigate the effective exchange interaction, $J_\mathrm{eff}$, mediated by conductive electrons within a nonmagnetic metal spacer, in the presence of a bias voltage, sandwiched by two ferromagnetic insulators. On the basis of the tight-binding model, we show the voltage and spacer thickness dependences of $J_\mathrm{eff}$, and its contorollability is demonstrated. We also propose a new magnonic device with the functions of both field effect transistor and non-volatile memory.
The realization of molecular-based electronic devices depends to a large extent on the ability to mechanically stabilize the involved molecular bonds, while making use of efficient resonant charge transport through the device. Resonant charge transport can induce vibrational instability of molecular bonds, leading to bond rupture under a bias voltage. In this work, we go beyond the wide-band approximation in order to study the phenomenon of vibrational instability in single molecule junctions and show that the energy-dependence of realistic molecule-leads couplings affects the mechanical stabi…
We explore the thermoelectric properties of gold atomic chains bridging gold electrodes by means of \textit{ab initio} and semi-empirical calculations, and heuristic reasoning. We predict the thermoelectric voltage induced by a temperature difference across such junctions to oscillate, repeatedly changing sign, as a function of the number of atoms $N$ making up the atomic chain. We also predict the amplitude of the oscillations to be proportional to $N$ for long atomic chains. Further we predict the thermoelectric voltage to change sign, in some cases, if the junction is stretched without chan…
We investigate the electronic transport properties of a ferromagnet/normal/ferromagnet junction on the surface of a topological insulator with a gate voltage exerted on the normal segment. It is found that the conductance oscillates with the width of normal segment and gate voltage, and the maximum of conductance gradually decreases while the minimum of conductance approaches zero as the width increases. The conductance can be controlled by tuning the gate voltage like a spin field-effect transistor. It is found that the magnetoresistance ratio can be very large, and can also be negative owing…
A thermoelectric voltage is induced in a junction, constituted of two dissimilar materials under a temperature gradient. Similarly, a thermosize voltage is expected to be induced in a junction made by the same material but having different sizes, so-called thermosize junction. This is a consequence of dissimilarity in Seebeck coefficients due to differences in classical and/or quantum size effects in the same materials with different sizes. The studies on thermosize effects in literature are mainly based on semi-classical models under relaxation time approximation or even simpler local equilib…
We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottk…
We studied current-voltage characteristics of long one dimensional Josephson junction chains with Josephson energy much larger than charging energy, $E_J \gg E_C$. In this regime, typical IV curves of the samples consist of a supercurrent branch at low bias voltages followed by a voltage-independent chain current branch, $I_{Chain}$ at high bias. Our experiments showed that $I_{Chain}$ is not only voltage-independent but it is also practically temperature-independent up to $T_C$. We have successfully model the transport properties in these chains using a capacitively shunted junction model wit…
Transition voltage spectroscopy (TVS) is a promising spectroscopic tool for molecular junctions. The principles in TVS is to find the minimum on a Fowler-Nordheim plot where $\ln(I/V^2)$ is plotted against $1/V$ and relate the voltage at the minimum, $V_{\rm min}$, to the closest molecular level. Importantly, $V_{\rm min}$, is approximately half the voltage required to see a peak in the $dI/dV$ curve. Information about the molecular level position can thus be obtained at relatively low voltages. In this work we show that the molecular level position can be determined at even lower voltages, $V…
We report an experimental study on the tuning of supercurrent in a ballistic graphene-based Josephson junction by applying a control voltage to a transverse normal channel. In this four-terminal geometry, the control voltage changes the occupation of Andreev states in the Josephson junction, thereby tuning the magnitude of the supercurrent. As a function of gate voltage, we find two different regimes characterized by a double-step distribution and a hot-electron distribution, respectively. Our work opens new opportunities to design highly controllable Josephson junctions for tunable supercondu…
Low temperature (10K) high voltage bias dynamic conductivity (up to 2.7V) and shot noise (up to 1V) were studied in epitaxial Fe(100)/Fe-C/MgO(100)/Fe(100) magnetic tunnel junctions, as a function of the magnetic state. The junctions show large tunnel magnetoresistance (185% at 300K and 330% at 4K). Multiple sign inversion of the magnetoresistance is observed for bias polarity when the electrons scan the electronic structure of the bottom Fe-C interface. The shot-noise shows a Poissonian character. This demonstrates a pure spin dependent direct tunneling mechanism and validates the high struct…
We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA) without requiring an in-plane magnetic field. The soft layer of the MTJ is a two-phase (magnetostrictive/piezoelectric) multiferroic which is electrically stressed to produce an effective in-plane magnetic field around which the magnetization precesses to complete a flip when the VCMA voltage pulse duration and the stress duration are independently adjusted to…
We report first-principles calculations of the inelastic current-voltage (I-V) characteristics of a gold point contact and a molecular junction in the nonresonant regime. Discontinuities in the I-V curves appear in correspondence to the normal modes of the structures. Due to the quasi-one-dimensional nature of these systems, specific modes with large longitudinal component dominate the inelastic I-V curves. In the case of the gold point contact, our results are in good agreement with recent experimental data. For the molecular junction, we find that the inelastic I-V curves are quite sensitive…
In this paper we analyze different contributions to the magnetoresistance of magnetic tunneling junctions at low voltages. A substantial fraction of the resistance drop with voltage can be ascribed to variations of the density of states and the barrier transmission with the bias. However, we found that the anomaly observed at zero bias and the magnetoresistance behavior at very small voltages, point to the contribution of inelastic magnon-assisted tunneling. The latter is described by a transfer parameter $T^{J}$, which is one or two orders of magnitude smaller than $T^{d}$, the direct transmi…
The theory of dynamical Coulomb blockade is extended to tunneling elements driven by a time-dependent voltage. It is shown that for standard set-ups where an external voltage is applied to a tunnel junction via an impedance, time-dependent driving entails an excitation of the modes of the electromagnetic environment by the applied voltage. Previous approaches for ac driven circuits need to be extended to account for the driven bath modes. A unitary transformation involving also the variables of the electromagnetic environment is introduced which allows to split-off the time-dependence from the…
We report on the fabrication and characterization of vertical spin-valve structures using a thick epitaxial MgO barrier as spacer layer and a graphene-passivated Ni film as bottom ferromagnetic electrode. The devices show robust and scalable tunnel magnetoresistance, with several changes of sign upon varying the applied bias voltage. These findings are explained by a model of phonon-assisted transport mechanisms that relies on the peculiarity of the band structure and spin density of states at the hybrid graphene|Ni interface.
We have investigated asymptotic behavior of normal tunnel junctions at voltages where even the best ohmic environments start to look like RC transmission lines. In the experiments, this is manifested by an exceedingly slow approach to the linear behavior above the Coulomb gap. As expected on the basis of the quantum theory taking into account interaction with the environmental modes, better fits are obtained using 1/sqrt{V}- than 1/V- dependence for the asymptote. These results agree with the horizon picture if the frequency-dependent phase velocity is employed instead of the speed of light in…
We propose a model for a molecular junction with internal anharmonic torsional vibrations interacting with an electric current. The Wangsness-Bloch-Redfield master equation approach is used to determine the stationary reduced density matrix of the molecule. The dependence of the current, excitation energy and angular momentum of the junction on the applied voltage is studied. Negative differential conductance is observed in the current-voltage characteristics. It is shown that a model with vibrationally dependent coupling to the electrodes, asymmetric with respect to the interchanging of elect…
Non-equilibrium spin transport in a magnetic tunnel junction comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is studied theoretically. The interfacial SOI generates a spin torque of the form {\bf T}=T_{||}{\bf M}x({\bf z}x{\bf M})+T_{\bot}{\bf z}x{\bf M}, even in the absence of an external spin polarizer. For thick and large tunnel barriers, the torque reduces to the perpendicular component, $T_{\bot}$, which can be electrically tuned by applying a voltage across the insulator. In the limit of thin and low tunnel barriers, the in-plane torque $T_{…
A spin-dependent quantum transport is investigated in a paramagnetic resonant tunneling diode (RTD) based on a Zn$_{1-x}$Mn$_x$Se/ZnBeSe heterostructure. Using the Wigner-Poisson method and assuming the two-current model we have calculated the current-voltage characteristics, potential energy profiles and electron density distributions for spin-up and spin-down electron current in an external magnetic field. We have found that -- for both the spin-polarized currents -- two types of the current hysteresis appear on the current-voltage characteristics. The current hysteresis of the first type oc…
Energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors or photothyristors and triggered-on by picosecond laser pulses has been studied for the first time. For given values of resistive load, amplitude and duration $t_R$ of voltage pulses it is shown that there exist optimal sets of values for the device area, energy and absorption coefficient for triggering illumination, which provide the maximal general efficiency of the switch about 0.92. All three types of switches have almost identical efficiencies at short $t_R$, and in case of long $t_R$ …
We consider a single molecule circuit embedded into solvent. The Born dielectric solvation model is combined with Keldysh nonequilibrium Green's functions to describe the electron transport properties of the system. Depending on the dielectric constant, the solvent induces multiple nonequilibrium steady states with corresponding hysteresis in molecular current-voltage characteristics as well as negative differential resistance. We identify the physical range of solvent and molecular parameters where the effects are present. The position of the negative differential resistance peak can be contr…
We show how the spin-transfer torque generated by an ac voltage may be used to excite a paramagnetic resonance of an atomic spin deposited on a metallic surface. This mechanism is independent of the environment of the atom and may explain the ubiquity of the paramagnetic resonance reported by Baumann $\textit{et al.}$ [$\href{http://dx.doi.org/10.1126/science.aac8703}{Science \textbf{350}, 417 (2015)}$]. The current and spin dynamics are modeled by a time-dependent Redfield master equation generalized to account for the periodic driven voltage. Our approach shows that the resonance effect is a…
Hall effect in SN and SNS junctions is considered. It is shown that at small temperature the Hall voltage is significantly suppressed as compared to its normal metal value. The time dependence of the Hall voltage in SNS junctions has a form of narrow pulses with the Josephson frequency.
The interplay of the tunneling transfer of charges and the emission and absorption of light can be investigated in a set-up, where a voltage-biased Josephson junction is placed in series to a microwave cavity. Here, we concentrate on the emission process and show that due to the inherent nonlinearity of the Josephson junction tunneling Cooper-pairs can create a variety of non-classical states of light. Depending on experimental parameters and tuning the device can be described by effective Hamiltonians, indicating specific photon creation mechanisms which lead to strongly bunched or anti-bunch…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlle…
The coercivity and resistivity of a Pt/Co/AlOx/Pt junction are measured under sustained voltage application. High bias voltages of either polarity are determined to cause a strongly enhanced, reversible coercivity modification compared to low voltages. Time-resolved measurements show a logarithmic development of the coercive field in this regime, which continues over a period as long as thirty minutes. Furthermore, the resistance of the dielectric barrier is found to change strongly and reversibly on the same time scale, suggesting an electrochemical process is taking place within the dielectr…
In this paper, the perpendicular magnetic anisotropy (PMA) is tailored by changing the thickness of the free layer with the objective of producing MTJ nano-pillars with smooth linear resistance dependence with both in-plane magnetic field and DC bias. We furthermore demonstrate how this linear bias dependence can be used to create a zero-threshold broadband voltage rectifier, a feature which is important for rectification in wireless charging and energy harvesting applications. By carefully balancing the amount of PMA acting in the free layer the measured RF to DC voltage conversion efficiency…
We have measured the current-voltage characteristics of a single Josephson junction placed in a high impedance environment. The transfer of Cooper pairs through the junction is governed by overdamped quasicharge dynamics, leading to Coulomb blockade and Bloch oscillations. Exact duality exists to the standard overdamped phase dynamics of a Josephson junction, resulting in a dual shape of the current-voltage characteristic, with current and voltage changing roles. We demonstrate this duality with experiments which allow for a quantitative comparison with a theory that includes the effect of flu…
Vibrational modes of molecules are fundamental properties determined by intramolecular bonding, atomic masses, and molecular geometry, and often serve as important channels for dissipation in nanoscale processes. Although single-molecule junctions have been employed to manipulate electronic structure and related functional properties of molecules, electrical control of vibrational mode energies has remained elusive. Here we use simultaneous transport and surface-enhanced Raman spectroscopy measurements to demonstrate large, reversible, voltage-driven shifts of vibrational mode energies of C60 …
Charge transfer in a tunnel junction is studied under dc and ac voltage bias using quantum shot noise. Under dc voltage bias $V$, spectral density of noise measured within a very large bandwidth enables to deduce the current-current correlator in the time domain by Fourier transform. This correlator exhibits regular oscillations proving that electrons try to cross the junction regularly, every $h/eV$. Using harmonic and bi-harmonic ac voltage bias, we then show that quasiparticles excitations can be transferred through the junction in a controlled way. By measuring the reduction of the excess …
We theoretically investigate a near-quantum-limited parametric amplifier based on the nonlinear dynamics of quasiparticles flowing through a superconducting-insulator-superconducting junction. Photon-assisted tunneling, resulting from the combination of dc- and ac-voltage bias, gives rise to a strong parametric interaction for the electromagnetic modes reflected by the junction coupled to a transmission line. We show phase-sensitive and phase-preserving amplification, together with single- and two-mode squeezing. For an aluminum junction pumped at twice the center frequency, $ω_0/2π=6$~GHz, we…
Transition Voltage Spectroscopy (TVS) has been proposed as a tool to analyze charge transport through molecular junctions. We extend TVS to Au-vacuum-Au junctions and study the distance dependence of the transition voltage V_t(d) for clean electrodes in cryogenic vacuum. On the one hand, this allows us to provide an important reference for V_t(d)-measurements on molecular junctions. On the other hand, we show that TVS forms a simple and powerful test for vacuum tunneling models.
We show that the conductance ($G$) and transition voltage ($V_t$) spectroscopy data for standard vacuum nanogaps reported in the preceding paper by Sotthewes \emph{et al} cannot be understood within the framework of the existing theories/models whatever realistic effects are incorporates. However, if we include an additional ("ghost") current, the trends of the dependencies of $G$ and $V_t$ on the nanogap size $d$ can be explained. The ghost current is very small. Therefore, effects related to the ghost current can only be revealed at larger $d$'s, where the ghost current becomes comparable to…
Numerical simulation of switching process of high-voltage silicon photodiodes, phototransistors and photothyristors those triggered-on homogeneously over the area by picosecond laser pulses, has been performed for the first time. The analysis of results allowed to obtain "empirical" relationship between key parameters of switches (energy of control pulses, a radiation absorption coefficient, the area of structures) and parameters those characterizing the switching process in a circuit with the resistive load. For some of these relationship the approximate analytical formulas which seem to be q…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) st…
We present a theory for the full distribution of current fluctuations in incoherent diffusive superconducting junctions, subjected to a voltage bias. This theory of full counting statistics of incoherent multiple Andreev reflections is valid for arbitrary applied voltage. We present a detailed discussion of the properties of the first four cumulants as well as the low and high voltage regimes of the full counting statistics. The work is an extension of the results of Pilgram and the author, Phys. Rev. Lett. 94, 086806 (2005).
We present studies of ballistic transport in three terminal T-shaped junction in a linear and non-linear regime. The floating electrode acts as a scatterer and modifies the conductance in a direct channel (between source and drain electrode). In the low voltage limit, the conductance shows the Wigner threshold effect and the bend resistance. A specific shape of the Wigner singularities can be changed by applied voltage to the floating electrode as well as by a shift of the Fermi level. The system also exhibits filtering properties with current distribution between different modes propagating i…
We develop a theory of current-voltage (I-U) characteristics for superconductor-normal metal-superconductor (SNS) junctions. At small voltages and sufficiently low temperatures the I-U characteristics of the junction is controlled by the inelastic relaxation time, τ_{in}. In particular, the linear conductance is proportional to, τ_{in}. In this regime the I-U characteristics can be expressed solely in terms of dependence of the density of states in the normal region, ν(χ), on the phase difference of the order parameter across the the junction. In contrast, at large voltages the I-U characteris…
In contrast to graphene which is a gapless semiconductor, graphane, the hydrogenated graphene, is a semiconductor with an energy gap. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of doping graphane, p and n regions can be defined so that 2D p-n junctions become feasible with small reverse currents. This paper introduces a basic analysis to obtain current-voltage characteristics of such a 2D p-n junction based on graphane. As we show, within the approximation of Shockley law of junctions, an ideal I-V charactristic for this p-n junction is t…
The current noise in long SINIS junctions at low temperatures is sensitive to the population of the sub-gap states which is far from equilibrium even at low bias voltages. Nonequilibrium distribution establishes due to an interplay between voltage-driven inter-level Landau-Zener transitions and intra-level inelastic relaxation. We show that the Fano factor is enhanced drastically, being proportional to the number of times which particle can fly along the Andreev trajectory before it escapes from the level due to inelastic scattering. Combining the dc current and noise measurements one can full…
We study a planar Josephson junction under an applied DC voltage bias in the presence of an in-plane magnetic field. Upon tuning the bias voltage across the junction, $V_{\rm J}$, the two ends of the junction are shown to simultaneously host both $0$- and $π$-Majorana modes. These modes can be probed using either a Scanning-Tunneling-Microscopy measurement or through resonant Andreev tunneling from a lead coupled to the junction. While these modes are mostly bound to the junction's ends, they can hybridize with the bulk by absorbing or emitting photons. We analyze this process both numerically…
We present a theory of Landau-Lifshitz-Gilbert damping $α$ for a localized spin ${\vec S}$ in the junction coupled to the conduction electrons in both leads under an applied volatege $V$. We find the voltage dependence of the damping term reflecting the energy dependence of the density of states. We find the effect is linear in the voltage and cotrolled by particle-hole asymmetry of the leads.
Radio-frequency (rf) scanning tunneling microscopy has recently been advanced to methods such as single-atom spin resonance. Such methods benefit from a frequency-independent rf voltage amplitude across the tunnel junction, which is challenging to achieve due to the strong frequency dependence of the rf attenuation in a transmission line. Two calibration methods for the rf amplitude have been reported to date. In this Note, we present an alternative method to achieve a frequency-independent rf voltage amplitude across the tunnel junction and show the results of this calibration. The presented …
We investigate bias voltage effects on the spin-dependent transport properties of Fe/MgAl${}_2$O${}_4$/Fe(001) magnetic tunneling junctions (MTJs) by comparing them with those of Fe/MgO/Fe(001) MTJs. By means of the nonequilibrium Green's function method and the density functional theory, we calculate bias voltage dependences of magnetoresistance (MR) ratios in both the MTJs. We find that in both the MTJs, the MR ratio decreases as the bias voltage increases and finally vanishes at a critical bias voltage $V_{\rm c}$. We also find that the critical bias voltage $V_{\rm c}$ of the MgAl${}_2$O${…
We calculate the current-voltage (I-V) characteristic of a Josephson junction containing a resonant level in the weakly coupled regime (resonance width small compared to the superconducting gap). The phase $ϕ$ across the junction becomes time dependent in response to a DC current bias. Rabi oscillations in the Andreev levels produce a staircase I-V characteristic. The number of voltage steps counts the number of Rabi oscillations per $2π$ increment of $ϕ$, providing a way to probe the coherence of the qubit in the absence of any external AC driving. The phenomenology is the same as the "Majora…
Critical current fluctuations with a 1/ f spectral density (f is frequency) are potentially a limiting source of intrinsic decoherence in superconducting quantum bits (qubits) based on Josephson tunnel junctions. Prior measurements of this noise were made at nonzero voltages whereas qubits are operated in the zero voltage state. We report measurements of 1/ f noise in a dc superconducting quantum interference device first, coupled to a resonant tank circuit and operated in a dispersive mode at zero voltage, and, second, operated conventionally with a current bias in the voltage regime. Both me…
