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arXiv 0707.4475cond-mat.mes-hall
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半导体/铁磁结在自旋封锁区的电流-电压特性

Current-voltage characteristics of semiconductor/ferromagnet junctions in the spin blockade regime

Yu. V. Pershin, M. Di Ventra

摘要:

最近预测[Phys.Rev.B75,193301(2007)],当电子流从半导体被引导到铁磁体中时,自旋阻塞可以在半导体/完美铁磁体结处发展。在这里,我们考虑这种结的电流-电压特性。通过考虑接触电阻,我们证明了电流稳定效应:通过增加施加的电压,通过结的电流密度饱和在一个特定的值。电流密度的瞬态行为也进行了研究。

英文摘要:

It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we consider current-voltage characteristics of such junctions. By taking into account the contact resistance, we demonstrate a current stabilization effect: by increasing the applied voltage the current density through the junction saturates at a specific value. The transient behavior of the current density is also investigated.

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