Transition voltage spectroscopy (TVS) is a promising spectroscopic tool for molecular junctions. The principles in TVS is to find the minimum on a Fowler-Nordheim plot where $\ln(I/V^2)$ is plotted against $1/V$ and relate the voltage at the minimum, $V_{\rm min}$, to the closest molecular level. Importantly, $V_{\rm min}$, is approximately half the voltage required to see a peak in the $dI/dV$ curve. Information about the molecular level position can thus be obtained at relatively low voltages. In this work we show that the molecular level position can be determined at even lower voltages, $V_{\rm min}^{(α)}$ by finding the minimum of $\ln(I/V^α)$ with $α<2$. On the basis of a simple Lorentzian transmission model we analyze theoretical {\it ab initio} as well as experimental $I-V$ curves and show that the voltage required to determine the molecular levels can be reduced by $\sim 30%$ as compared to conventional TVS. As for conventional TVS, the symmetry/asymmetry of the molecular junction needs to be taken into account in order to gain quantitative information. We show that the degree of asymmetry may be estimated from a plot of $V_{\rm min}^{(α)}$ vs. $α$.
We investigate critical current noise in short ballistic graphene Josephson junctions in the open-circuit gate-voltage limit within the McWorther model. We find flicker noise in a wide frequency range and discuss the temperature dependence of the noise amplitude as a function of the doping level. At the charge neutrality point we find a singular temperature dependence $T^{-3}$, strikingly different from the linear dependence expected for short ballistic graphene Josephson junctions under fixed gate voltage.
We theoretically investigate the effective exchange interaction, $J_\mathrm{eff}$, mediated by conductive electrons within a nonmagnetic metal spacer, in the presence of a bias voltage, sandwiched by two ferromagnetic insulators. On the basis of the tight-binding model, we show the voltage and spacer thickness dependences of $J_\mathrm{eff}$, and its contorollability is demonstrated. We also propose a new magnonic device with the functions of both field effect transistor and non-volatile memory.
The realization of molecular-based electronic devices depends to a large extent on the ability to mechanically stabilize the involved molecular bonds, while making use of efficient resonant charge transport through the device. Resonant charge transport can induce vibrational instability of molecular bonds, leading to bond rupture under a bias voltage. In this work, we go beyond the wide-band approximation in order to study the phenomenon of vibrational instability in single molecule junctions and show that the energy-dependence of realistic molecule-leads couplings affects the mechanical stabi…
We explore the thermoelectric properties of gold atomic chains bridging gold electrodes by means of \textit{ab initio} and semi-empirical calculations, and heuristic reasoning. We predict the thermoelectric voltage induced by a temperature difference across such junctions to oscillate, repeatedly changing sign, as a function of the number of atoms $N$ making up the atomic chain. We also predict the amplitude of the oscillations to be proportional to $N$ for long atomic chains. Further we predict the thermoelectric voltage to change sign, in some cases, if the junction is stretched without chan…
A thermoelectric voltage is induced in a junction, constituted of two dissimilar materials under a temperature gradient. Similarly, a thermosize voltage is expected to be induced in a junction made by the same material but having different sizes, so-called thermosize junction. This is a consequence of dissimilarity in Seebeck coefficients due to differences in classical and/or quantum size effects in the same materials with different sizes. The studies on thermosize effects in literature are mainly based on semi-classical models under relaxation time approximation or even simpler local equilib…
We report an experimental study on the tuning of supercurrent in a ballistic graphene-based Josephson junction by applying a control voltage to a transverse normal channel. In this four-terminal geometry, the control voltage changes the occupation of Andreev states in the Josephson junction, thereby tuning the magnitude of the supercurrent. As a function of gate voltage, we find two different regimes characterized by a double-step distribution and a hot-electron distribution, respectively. Our work opens new opportunities to design highly controllable Josephson junctions for tunable supercondu…
We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA) without requiring an in-plane magnetic field. The soft layer of the MTJ is a two-phase (magnetostrictive/piezoelectric) multiferroic which is electrically stressed to produce an effective in-plane magnetic field around which the magnetization precesses to complete a flip when the VCMA voltage pulse duration and the stress duration are independently adjusted to…
The theory of dynamical Coulomb blockade is extended to tunneling elements driven by a time-dependent voltage. It is shown that for standard set-ups where an external voltage is applied to a tunnel junction via an impedance, time-dependent driving entails an excitation of the modes of the electromagnetic environment by the applied voltage. Previous approaches for ac driven circuits need to be extended to account for the driven bath modes. A unitary transformation involving also the variables of the electromagnetic environment is introduced which allows to split-off the time-dependence from the…
Energy efficiency of optoelectronic switches based on high-voltage silicon photodiodes, phototransistors or photothyristors and triggered-on by picosecond laser pulses has been studied for the first time. For given values of resistive load, amplitude and duration $t_R$ of voltage pulses it is shown that there exist optimal sets of values for the device area, energy and absorption coefficient for triggering illumination, which provide the maximal general efficiency of the switch about 0.92. All three types of switches have almost identical efficiencies at short $t_R$, and in case of long $t_R$ …
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel junctions (MTJ) on a Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) piezoelectric substrate with (001) orientation. It is found that the magnetic easy axis, switching field, and the tunnel magnetoresistance (TMR) of the MTJ can be efficiently controlled by strain from the underlying piezoelectric layer upon the application of a gate voltage. Repeatable voltage controlle…
In this paper, the perpendicular magnetic anisotropy (PMA) is tailored by changing the thickness of the free layer with the objective of producing MTJ nano-pillars with smooth linear resistance dependence with both in-plane magnetic field and DC bias. We furthermore demonstrate how this linear bias dependence can be used to create a zero-threshold broadband voltage rectifier, a feature which is important for rectification in wireless charging and energy harvesting applications. By carefully balancing the amount of PMA acting in the free layer the measured RF to DC voltage conversion efficiency…
Charge transfer in a tunnel junction is studied under dc and ac voltage bias using quantum shot noise. Under dc voltage bias $V$, spectral density of noise measured within a very large bandwidth enables to deduce the current-current correlator in the time domain by Fourier transform. This correlator exhibits regular oscillations proving that electrons try to cross the junction regularly, every $h/eV$. Using harmonic and bi-harmonic ac voltage bias, we then show that quasiparticles excitations can be transferred through the junction in a controlled way. By measuring the reduction of the excess …
We theoretically investigate a near-quantum-limited parametric amplifier based on the nonlinear dynamics of quasiparticles flowing through a superconducting-insulator-superconducting junction. Photon-assisted tunneling, resulting from the combination of dc- and ac-voltage bias, gives rise to a strong parametric interaction for the electromagnetic modes reflected by the junction coupled to a transmission line. We show phase-sensitive and phase-preserving amplification, together with single- and two-mode squeezing. For an aluminum junction pumped at twice the center frequency, $ω_0/2π=6$~GHz, we…
Numerical simulation of switching process of high-voltage silicon photodiodes, phototransistors and photothyristors those triggered-on homogeneously over the area by picosecond laser pulses, has been performed for the first time. The analysis of results allowed to obtain "empirical" relationship between key parameters of switches (energy of control pulses, a radiation absorption coefficient, the area of structures) and parameters those characterizing the switching process in a circuit with the resistive load. For some of these relationship the approximate analytical formulas which seem to be q…
We develop a theory of current-voltage (I-U) characteristics for superconductor-normal metal-superconductor (SNS) junctions. At small voltages and sufficiently low temperatures the I-U characteristics of the junction is controlled by the inelastic relaxation time, τ_{in}. In particular, the linear conductance is proportional to, τ_{in}. In this regime the I-U characteristics can be expressed solely in terms of dependence of the density of states in the normal region, ν(χ), on the phase difference of the order parameter across the the junction. In contrast, at large voltages the I-U characteris…
We study a planar Josephson junction under an applied DC voltage bias in the presence of an in-plane magnetic field. Upon tuning the bias voltage across the junction, $V_{\rm J}$, the two ends of the junction are shown to simultaneously host both $0$- and $π$-Majorana modes. These modes can be probed using either a Scanning-Tunneling-Microscopy measurement or through resonant Andreev tunneling from a lead coupled to the junction. While these modes are mostly bound to the junction's ends, they can hybridize with the bulk by absorbing or emitting photons. We analyze this process both numerically…
We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It cont…
Radio-frequency (rf) scanning tunneling microscopy has recently been advanced to methods such as single-atom spin resonance. Such methods benefit from a frequency-independent rf voltage amplitude across the tunnel junction, which is challenging to achieve due to the strong frequency dependence of the rf attenuation in a transmission line. Two calibration methods for the rf amplitude have been reported to date. In this Note, we present an alternative method to achieve a frequency-independent rf voltage amplitude across the tunnel junction and show the results of this calibration. The presented …
We investigate bias voltage effects on the spin-dependent transport properties of Fe/MgAl${}_2$O${}_4$/Fe(001) magnetic tunneling junctions (MTJs) by comparing them with those of Fe/MgO/Fe(001) MTJs. By means of the nonequilibrium Green's function method and the density functional theory, we calculate bias voltage dependences of magnetoresistance (MR) ratios in both the MTJs. We find that in both the MTJs, the MR ratio decreases as the bias voltage increases and finally vanishes at a critical bias voltage $V_{\rm c}$. We also find that the critical bias voltage $V_{\rm c}$ of the MgAl${}_2$O${…
We calculate the current-voltage (I-V) characteristic of a Josephson junction containing a resonant level in the weakly coupled regime (resonance width small compared to the superconducting gap). The phase $ϕ$ across the junction becomes time dependent in response to a DC current bias. Rabi oscillations in the Andreev levels produce a staircase I-V characteristic. The number of voltage steps counts the number of Rabi oscillations per $2π$ increment of $ϕ$, providing a way to probe the coherence of the qubit in the absence of any external AC driving. The phenomenology is the same as the "Majora…
