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arXiv 2109.05062cond-mat.mtrl-sci
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阳离子无序ZnGeN $_2$的带隙分析和载流子局域化

Band gap analysis and carrier localization in cation-disordered ZnGeN$_2$

Jacob J. Cordell, Garritt J. Tucker, Adele C. Tamboli, Stephan Lany

摘要:

阳离子位点无序在三元氮化物的生长中提供了一定程度的自由度,用于调节材料系统的技术相关性质。例如,当结构的有序性偏离其基态的有序性时,ZnGeN $_2$的带隙改变。结合载流子局域化和缺陷态的观点,分析了不同无序度对ZnGeN $_2$电子性质的影响,弥补了目前研究中对稀态或完全无序系统的空白.本研究表明,在ZnGeN $_2$的状态和本地化的载流子的密度的变化计算使用带隙校正的密度泛函理论和混合计算部分无序的超晶胞使用Monte Carlo方法。我们使用局域化和态密度来讨论无序材料中带隙的不明确性质,比较理论和实验背景下能隙的多种定义。降低序参量导致无序情况下带隙的大幅减小。带隙的减小部分是由于在价带连续区上方形成的孤立的局域态,并且与由比锗更多的锌配位的氮相关联。除了完全有序的结构之外,缺陷态在所有结构中的普遍存在为将无序ZnGeN $_2$并入光学器件中带来了挑战,但是与这些缺陷相关的局部化提供了对材料中电子/空穴复合机制的深入了解。

英文摘要:

Cation site disorder provides a degree of freedom in the growth of ternary nitrides for tuning the technologically relevant properties of a material system. For example, the band gap of ZnGeN$_2$ changes when the ordering of the structure deviates from that of its ground state. By combining the perspectives of carrier localization and defect states, we analyze the impact of different degrees of disordering on electronic properties in ZnGeN$_2$, addressing a gap in current studies which focus on dilute or fully disordered systems. The present study demonstrates changes in the density of states and localization of carriers in ZnGeN$_2$ calculated using band gap-corrected density functional theory and hybrid calculations on partially disordered supercells generated using the Monte Carlo method. We use localization and density of states to discuss the ill-defined nature of a band gap in a disordered material, comparing multiple definitions of the energy gap in the context of theory and experiment. Decreasing the order parameter results in a large reduction of the band gap in disordered cases. The reduction in band gap is due in part to isolated, localized states that form above the valence band continuum and are associated with nitrogen coordinated by more zinc than germanium. The prevalence of defect states in all but the perfectly ordered structure creates challenges for incorporating disordered ZnGeN$_2$ into optical devices, but the localization associated with these defects provides insight into mechanisms of electron/hole recombination in the material.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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