Alina LaPotin, Kevin L. Schulte, Myles A. Steiner, Kyle Buznitsky, Colin C. Kelsall, Daniel J. Friedman, Eric J. Tervo, Ryan M. France, Michelle R. Young, Andre… 展开作者
Alina LaPotin, Kevin L. Schulte, Myles A. Steiner, Kyle Buznitsky, Colin C. Kelsall, Daniel J. Friedman, Eric J. Tervo, Ryan M. France, Michelle R. Young, Andrew Rohskopf, Shomik Verma, Evelyn N. Wang, Asegun Henry
We report the fabrication and measurement of thermophotovoltaic (TPV) cells with efficiencies of >40%, which is a record high TPV efficiency and the first experimental demonstration of the efficiency of high-bandgap tandem TPV cells. TPV efficiency was determined by simultaneous measurement of electric power output and heat dissipation from the device via calorimetry. The TPV cells are two-junction devices comprising high-quality III-V materials with band gaps between 1.0 and 1.4 eV that are optimized for high emitter temperatures of 1900-2400°C. The cells exploit the concept of band-edge spectral filtering to obtain high efficiency, using high-reflectivity back surface reflectors to reject unusable sub-bandgap radiation back to the emitter. A 1.4/1.2 eV device reached a maximum efficiency of (41.1 +/- 1)% operating at a power density of 2.39 W/cm2 under an irradiance of 30.4 W/cm2 and emitter temperature of 2400°C. A 1.2/1.0 device reached a maximum efficiency of (39.3 +/- 1)% operating at a power density of 1.8 W/cm2 under an irradiance of 20.1 W/cm2 and emitter temperature of 2127°C. These cells can be integrated into a TPV system for thermal energy grid storage (TEGS) to enable dispatchable renewable energy. These new TPV cells enable a pathway for TEGS to reach sufficiently high efficiency and sufficiently low cost to enable full decarbonization of the grid. Furthermore, the high demonstrated efficiency also gives TPV the potential to compete with turbine-based heat engines for large-scale power production with respect to both cost and performance, thereby enabling possible usage in natural gas or hydrogen-fueled electricity production.
A standardized method for measuring thermophotovoltaic (TPV) efficiency has not been yet established, which makes the reported results difficult to compare. Besides, most of the TPV efficiencies reported to date have been obtained using small view factors, i.e., large cell-to-emitter distances, so the impact of the series resistance is usually underestimated, and the optical cavity effects, i.e., the multiple reflections taking place between the emitter and the cell, are not accounted for experimentally. In this work, we present an experimental setup able to measure the TPV efficiency under hi…
Numerous studies have reported performance enhancement of a thermophotovoltaic (TPV) system when an emitter is separated by nanoscale gaps from a TPV cell. Although a $p$-$n$-junction-based TPV cell has been widely used for the near-field TPV system, a Schottky-junction-based near-field TPV system has drawn attention recently with the advantage of the easy fabrication. However, existing studies mostly focused on the generated photocurrent only in the metal side due to the fact that required energy for the metal-side photocurrent (i.e., Schottky barrier height) is smaller than the bandgap energ…
Thermophotovoltaic (TPV) energy conversion efficiency has recently surpassed 30%. The key behind such high efficiency is the inclusion of a highly efficient mirror in the rear of the TPV cell that turns back to the thermal emitter the outband energy photons. Efficiencies over 50% could be theoretically attainable by approaching a mirror reflectance of 100%. However, the very few percent of outband absorption significantly deteriorate the conversion efficiency. Thus, current research focuses on developing advance mirror designs able to reach an extreme high outband reflectance over 95%. In this…
Germanium telluride (GeTe) having a direct bandgap of 0.6 eV has mainly been in phase change memory and thermoelectric power generation. In this article, we study the electronic structure of the GeTe by first-principles calculations. The theoretical direct bandgap of GeTe was found to be 0.69 eV which is very close to the experimental value. Then, we demonstrate a single-junction GeTe thermophotovoltaic (TPV) cell based on device transport model with np structure. The device was optimized for the higher performance of the TPV cell. The GeTe TPV cell exhibited an efficiency of 7.9% with JSC=16.…
It is well known that performance of a thermophotovoltaic (TPV) device can be enhanced if the vacuum gap between the thermal emitter and the TPV cell becomes nanoscale due to the photon tunneling of evanescent waves. Having multiple bandgaps, multi-junction TPV cells have received attention as an alternative way to improve its performance by selectively absorbing the spectral radiation in each subcell. In this work, we comprehensively analyze the optimized near-field tandem TPV system consisting of the thin-ITO-covered tungsten emitter (at 1500 K) and GaInAsSb/InAs monolithic interconnected ta…
Various spectral control techniques can be applied to improve the performance of a thermophotovoltaic (TPV) system. For example, a back surface reflector (BSR) can improve the performance of TPV systems. A conventional metal BSR structure enhances the photogeneration rate by increasing the absorption probability of photons via back surface reflection, affording a second chance for absorption. However, surface passivation and external luminescence effects introduced by BSR structures have been previously ignored, which potentially decreases the performance of TPV systems. Recently, a back gappe…
We evaluate near-field thermophotovoltaic (TPV) energy conversion systems focusing in particular on their open-circuit voltage (Voc). Unlike previous analyses based largely on numerical simulations with fluctuational electrodynamics, here, we develop an analytic model that captures the physics of near-field TPV systems and can predict their performance metrics. Using our model, we identify two important opportunities of TPV systems operating in the near-field. First, we show analytically that enhancement of radiative recombination is a natural consequence of operating in the near-field. Second…
Semiconductor emitter can possibly achieve sharp cutoff wavelength due to its intrinsic bandgap absorption and almost zero sub-bandgap emission without doping. A germanium wafer based selective emitter with front-side antireflection and backside metal coating is studied here for thermophotovoltaic (TPV) energy conversion. Optical simulation predicts the spectral emittance above 0.9 in the wavelengths from 1 to 1.85 um and below 0.2 in the sub-bandgap range with sharp cutoff around the bandgap, indicating superior spectral selectivity behavior. This is confirmed by excellent agreement with indi…
An indium arsenide photovoltaic cell with gold front contacts is designed for use in a near-field thermophotovoltaic (NF-TPV) device consisting of millimeter-size surfaces separated by a nanosize vacuum gap. The device operates with a doped silicon radiator maintained at a temperature of 800 K. The architecture of the photovoltaic cell, including the emitter and base thicknesses, the doping level of the base, and the front contact grid parameters, are optimized for maximizing NF-TPV power output. This is accomplished by solving radiation and charge transport in the cell via fluctuational elect…
Recent experimental studies on near-field thermophotovoltaic (TPV) energy conversion have mainly focused on enhancing performance via photon tunneling of evanescent waves. In the sub-micron gap, however, there exist peculiar phenomena caused by the interference of propagating waves, which is seldom observed due to the dramatic increase of the radiation by evanescent waves in full spectrum range. Here, we experimentally demonstrate the oscillatory nature of near-field TPV energy conversion in the far-to-near-field transition regime (250-2600 nm), where evanescent and propagating modes are compa…
The conventional notion for achieving high efficiency in thermophotovoltaics (TPVs) is to use a monochromatic emission at a photon energy corresponding to the band gap of the cell. Here, we prove theoretically that such a notion is only accurate under idealized conditions, and further show that when non-radiative recombination is taken into account, efficiency improvement can be achieved by broadening the emission spectrum, due to an enhancement in the open-circuit voltage. Broadening the emission spectrum also improves the electrical power density, by increasing the short-circuit current. To …
Near-field thermal radiation transfer overcoming the far-field blackbody limit has attracted significant attention in recent years owing to its potential for drastically increasing the output power and conversion efficiency of thermophotovoltaic (TPV) power generation systems. Here, we experimentally demonstrate a one-chip near-field TPV device overcoming the far-field blackbody limit, which integrates a 20-um-thick Si emitter and an InGaAs PV cell with a sub-wavelength gap (<140 nm). The device exhibits a photocurrent density of 1.49 A/cm2 at 1192 K, which is 1.5 times larger than the far-fie…
Germanium Thermophotovoltaic Devices Achieving 7.3% Efficiency Under High-Temperature Emission by Empirical Calorimetry
Instituto de Energía Solar, Universidad Politécnica de Madrid（马德里理工大学太阳能研究所）；Departament d’Enginyeria Electrònica, Universitat Politècnica de Catalunya（加泰罗尼亚理工大学电子工程系）；GR-MECAMAT, Department of Engineering, Universitat de Vic – Universitat Central de Catalunya（维卡中央大学工程学院 GR-MECAMAT）
The thermophotovoltaic cells which convert the low temperature radiation into electricity are of significance due to their potential applications in many fields. In this work, Bi2Te3/Si thermophotovoltaic cells which work under the radiation from the blackbody with the temperature of 300 K-480 K are presented. The experimental results show that the cells can output electricity even under the radiation temperature of 300 K. The band structure of Bi2Te3/Si heterojunctions and the defects in Bi2Te3 thin films lower the conversion efficiency of the cells. It is also demonstrated that the resistivi…
Thermophotovoltaics are promising solid-state energy converters for a variety of applications such as grid-scale energy storage, concentrating solar-thermal power, and waste heat recovery. Here, we report the design, fabrication, and testing of large area (0.8 cm$^2$), scalable, single junction 0.74-eV GaInAs thermophotovoltaic devices reaching an efficiency of 38.8$\pm$2.0% and an electrical power density of 3.78 W/cm$^2$ at an emitter temperature of 1850°C. Reaching such a high emitter temperature and power density without sacrificing efficiency is a direct result of combining good spectral …
Here we investigate the use of single-junction InGaAs airbridge cells (ABCs) at elevated power densities. Such conditions are relevant to many thermophotovoltaic (TPV) applications, ranging from space to on-demand renewable electricity, and require effective management of heat and charge carriers. Experimental characterization of an InGaAs ABC with varying emitter and cell temperature is used to develop a predictive device model where carrier lifetimes and series resistances are the sole fitting parameters. The utility of this model is demonstrated through its use in identifying near-term oppo…
Compound semiconductors have been the predominant building blocks for the current mid-infrared thermophotovoltaic devices relevant to sub-2000 K heat conversion and power beaming. However, the prohibitively high cost associated with these technologies limits their broad adoption. Herein, to alleviate this challenge we introduce an all-group IV mid-infrared cell consisting of GeSn alloy directly on a silicon wafer. This emerging class of semiconductors provides strain and composition as degrees of freedom to control the bandgap energy thus covering the entire mid-infrared range. The proposed th…
Thermophotovoltaic systems in principle enable utilization of heat that is usually regarded as wasted energy. However, the wavelength selectivity of the thermal emitter required for high efficiencies is rather difficult to control with conventional designs. Here, we design a thermophotovoltaic system comprising silicon rods as thermal emitter with a relatively narrow emission spectrum and a photovoltaic cell with a band gap corresponding to 1.76 $μ$m, and verify efficient power generation. By accurately measuring the heat flux that enters the emitter, the emitter temperature, and the electrica…
Transparent photovoltaic (TPV) devices have the great potential to apply as smart windows in the construction and agriculture field. The efficiencies of TPVs are growing up quickly in recent years and the champion efficiency even exceeds 10%. However, the transparency is still hard to further improved after the average visible transmission (AVT) achieved 73%. Each component of the TPV devices will influent the transparency of the TPV. To date, the TPV with the AVT over 80% has not been reported yet. In this work, we describe the fullerene-based highly transparent solar cells. The CuSCN/C60 het…
Graphene---hexagonal-boron-nitride---InSb near-field structures are designed and optimized to enhance the output power and energy efficiency of the thermophotovoltaic systems working in the temperature range of common industrial waste heat, $400~\rm K \sim 800~\rm K$, which is also the working temperature range for conventional thermoelectric devices. We show that the optimal output electric power can reach $3.5\times10^{4} \rm\ W/\rm m^2$ for the system with a graphene---hexagonal-boron-nitride heterostructure emitter and a graphene-covered InSb cell, whereas the best efficiency is achieved b…
Near-field thermophotovoltaic systems functioning at 400$\sim$900~K based on graphene-hexagonal-boron-nitride heterostructures and thin-film InSb $p$-$n$ junctions are investigated theoretically. The performances of two near-field systems with different emitters are examined carefully. One near-field system consists of a graphene-hexagonal-boron-nitride-graphene sandwich structure as the emitter, while the other system has an emitter made of the double graphene-hexagonal-boron-nitride heterostructure. It is shown that both systems exhibit higher output power density and energy efficiency than …
The performance of a near-field thermophotovoltaic system with a tandem-cell structure composed of thin-film p-doped GaSb and n-doped InAs sub-cells on a gold backside reflector is theoretically investigated. The temperatures of the Ga-doped ZnO emitter and the tandem cells are set as 1800 K and 300 K, while the thicknesses of GaSb and InAs sub-cells are considered as 1.5um and 0.5um, respectively. Fluctuational electrodynamics along with the multilayer dyadic Green's function is used to study near-field radiative heat transfer with the consideration of photon chemical potential, whereas radia…
Solar energy promises a viable solution to meet the ever-increasing power demand by providing a clean, renewable energy alternative to fossil fuels. For solar thermophotovoltaics (STPV), high-temperature absorbers and emitters with strong spectral selectivity are imperative to efficiently couple solar radiation into photovoltaic cells. Here, we demonstrate refractory metasurfaces for STPV with tailored absorptance and emittance characterized by in-situ high-temperature measurements, featuring thermal stability up to at least 1200 C. Our tungsten-based metasurface absorbers have close-to-unity …
We propose a concentrated thermionic emission solar cell design, which demonstrates a high solar-to-electricity energy conversion efficiency larger than 10\% under 600 sun, by harnessing the exceptional electrical, thermal and radiative properties of the graphene as a collector electrode. By constructing an analytical model that explicitly takes into account the non-Richardson behavior of the thermionic emission current from graphene, space charge effect in vacuum gap, and the various irreversible energy losses within the subcomponents, we perform a detailed characterization on the conversion …
