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arXiv 2108.01833cond-mat.mtrl-sci
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Bi2Se3的元素分辨价电子结构中的轨道贡献

Orbital contributions in the element-resolved valence electronic structure of Bi2Se3

Cheng-Tai Kuo, Shih-Chieh Lin, Jean-Pascal Rueff, Zhesheng Chen, Irene Aguilera, Gustav Bihlmayer, Lukasz Plucinski, Ismael L. Graff, Giuseppina Conti, Ivan A. … 展开作者

Cheng-Tai Kuo, Shih-Chieh Lin, Jean-Pascal Rueff, Zhesheng Chen, Irene Aguilera, Gustav Bihlmayer, Lukasz Plucinski, Ismael L. Graff, Giuseppina Conti, Ivan A. Vartanyants, Claus M. Schneider, Charles S. Fadley

摘要:

利用驻波激发硬X射线光电子能谱(SW-HAXPES)研究了拓扑绝缘体(TI)Bi_2Se_3的体能带结构,确定了Bi和Se轨道态对价带的贡献.这种SW技术可以提供元素分辨的信息,并提取单独的Bi和Se的贡献的Bi 2 Se 3价带。与密度泛函理论(DFT)计算(LDA和GW)的比较表明,Bi 6s、Bi 6p和Se 4p态在Bi 2Se 3 HAXPES价带中占主导地位。这些发现为研究这类TI的元素分辨能带结构和轨道贡献铺平了道路。

英文摘要:

In this work, we studied the bulk band structure of a topological insulator (TI) Bi2Se3 and determined the contributions of the Bi and Se orbital states to the valence bands using standing wave-excited hard x-ray photoemission spectroscopy (SW-HAXPES). This SW technique can provide the element-resolved information and extract individual Bi and Se contributions to the Bi2Se3 valence band. Comparisons with density functional theory (DFT) calculations (LDA and GW) reveal that the Bi 6s, Bi 6p, and Se 4p states are dominant in the Bi2Se3 HAXPES valence band. These findings pave a way for studying the element-resolved band structure and orbital contributions of this class of TIs.

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