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arXiv 2107.08478cond-mat.mes-hallcond-mat.mtrl-sci
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轨道电子学:固体中的轨道电流

Orbitronics: Orbital Currents in Solids

Dongwook Go, Daegeun Jo, Hyun-Woo Lee, Mathias Kläui, Yuriy Mokrousov

摘要:

在固体中,电子布洛赫态由原子轨道形成。虽然很自然地期望轨道组成和布洛赫态的信息可以被操纵和传输,类似于过去几十年中广泛研究的自旋自由度,但已经假设晶体场的轨道猝灭阻止了轨道自由度的显着动力学。然而,最近的研究表明,尽管在基态中存在轨道淬灭效应,但由具有有限轨道角动量的电子流给出的轨道电流可以在宽类别的材料中电生成和传输。轨道电流在自旋霍尔效应和谷霍尔效应等其他输运现象的机制中也起着重要作用。最重要的是,有人提出,轨道电流可以用来诱导磁化动力学,这是一个最关键的和探索方面的磁性。本文综述了近年来轨道流的研究进展和现状。我们提出的物理机制产生轨道电流和讨论候选材料的轨道电流是显而易见的。我们回顾了最近的实验轨道电流的产生和运输,并讨论了各种实验方法来量化这个难以捉摸的对象在$orbitronics$ $-$的核心,利用轨道的自由度作为信息载体在固态设备。

英文摘要:

In solids, electronic Bloch states are formed by atomic orbitals. While it is natural to expect that orbital composition and information about Bloch states can be manipulated and transported, in analogy to the spin degree of freedom extensively studied in past decades, it has been assumed that orbital quenching by the crystal field prevents significant dynamics of orbital degrees of freedom. However, recent studies reveal that an orbital current, given by the flow of electrons with a finite orbital angular momentum, can be electrically generated and transported in wide classes of materials despite the effect of orbital quenching in the ground state. Orbital currents also play a fundamental role in the mechanisms of other transport phenomena such as spin Hall effect and valley Hall effect. Most importantly, it has been proposed that orbital currents can be used to induce magnetization dynamics, which is one of the most pivotal and explored aspects of magnetism. Here, we give an overview of recent progress and the current status of research on orbital currents. We review proposed physical mechanisms for generating orbital currents and discuss candidate materials where orbital currents are manifest. We review recent experiments on orbital current generation and transport and discuss various experimental methods to quantify this elusive object at the heart of $orbitronics$ $-$ an area which exploits the orbital degree of freedom as an information carrier in solid-state devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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