低温下高迁移率硅MOSFET中磁场驱动的扩展态和局域态之间的再分布
Magnetic-field-driven redistribution between extended and localized electronic states in high-mobility Si MOSFETs at low temperatures
摘要：
在高迁移率Si MOSFET的低温振荡电子输运研究中，我们观察到弱面内磁场下的两种相关效应：重整化磁化率$χ^*(H)$的急剧下降和可动载流子浓度$n(H)$的增加。我们提出了一个唯象模型的磁场驱动的扩展和本地化的电子状态，定性地解释这两种效果之间的重新分配。我们认为这种重分布主要是由与费米液态共存的、能量接近费米能$E_F$的大自旋局域态的磁化引起的。我们的研究结果也解决了长期以来在弱（$H \sim k_BT/μ_B$）和强（$H \sim E_F/gμ_B$）磁场中获得的$χ^*$实验数据之间的分歧。
英文摘要：
In the study of oscillatory electron transport in high-mobility Si MOSFETs at low temperatures we observed two correlated effects in weak in-plane magnetic fields: a steep decrease of the renormalized magnetic susceptibility $χ^*(H)$ and an increase of the concentration of mobile carriers $n(H)$. We suggest a phenomenological model of the magnetic field driven redistribution between the extended and localized electronic states that qualitatively explains both effects. We argue that the redistribution is mainly caused by magnetization of the large-spin localized states with energies close to the Fermi energy $E_F$, coexisting with the majority Fermi liquid state. Our findings also resolve a long-standing disagreement between the experimental data on $χ^*$ obtained in weak ($H \sim k_BT/μ_B$) and strong ($H \sim E_F/gμ_B$) magnetic fields.
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