高迁移率硅反型层中双谷电子系统电导的相互作用效应
Interaction Effects in Conductivity of a Two-Valley Electron System in High-Mobility Si Inversion Layers
摘要：
我们测量了高迁移率（001）Si金属氧化物半导体场效应晶体管（MOSFET）在电子密度n=（1.8-15）× 10 ~（11）cm ~ 2，温度T= 30 mK-4.2K，面内磁场B=0- 5 T范围内的电导率。利用无序二维体系电导率的相互作用效应理论对实验数据进行了分析。与理论比较，如谷间散射时间和谷分裂，必不可少的参数，已被测量或评估在独立的实验。所观察到的电导率的行为，包括其准线性增加与降低T下降到~0.4K和其在较低温度下的下降，是与理论一致的。从比较中获得的费米液体参数的值与从基于相互作用的二维系统中的磁振荡理论的Shubnikov-de Haas振荡的分析中提取的相应值一致。
英文摘要：
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields B=0-5T. The experimental data have been analyzed using the theory of interaction effects in the conductivity of disordered 2D systems. The parameters essential for comparison with the theory, such as the intervalley scattering time and valley splitting, have been measured or evaluated in independent experiments. The observed behavior of the conductivity, including its quasi-linear increase with decreasing T down to ~0.4K and its downturn at lower temperatures, is in agreement with the theory. The values of the Fermi- liquid parameter obtained from the comparison agree with the corresponding values extracted from the analysis of Shubnikov-de Haas oscillations based on the theory of magnetooscillations in interacting 2D systems.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
